JPS5768059A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5768059A
JPS5768059A JP14486180A JP14486180A JPS5768059A JP S5768059 A JPS5768059 A JP S5768059A JP 14486180 A JP14486180 A JP 14486180A JP 14486180 A JP14486180 A JP 14486180A JP S5768059 A JPS5768059 A JP S5768059A
Authority
JP
Japan
Prior art keywords
layer
ray
saving
film
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14486180A
Other languages
Japanese (ja)
Inventor
Hiroji Harada
Kyusaku Nishioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14486180A priority Critical patent/JPS5768059A/en
Priority to DE19813141000 priority patent/DE3141000A1/en
Publication of JPS5768059A publication Critical patent/JPS5768059A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

Abstract

PURPOSE: To facilitate the inspection and the characteristics evaluation of a circuit element formed on a semiconductor substrate by covering the circuit element and the connecting wire layer with an organic resin film of thickness in the prescribed range, thereby saving the quantity of used mterial and forming α ray preventive layer.
CONSTITUTION: A plurality of memory cells made of gate films 4, 5 polysilicon layers 6, 7 and an N type diffused region 2 are formed, for example, on a P type Si substrate, 1 aluminum wires 9a, 9b are formed via a PSG film 8, and the surface is, for example, covered and protected with a nitrided film 10, thereby forming a memory circuit. For the purpose of preventing software error due to α-ray, a polyimide resin layer 15, for example, formed on the surface of the device. The thickness of the layer 15 is set based on the software error occuring probability by considering the energy of the α-ray existing in natural fiel and its distribution to 5W 15μm. Thus, it is formed thinner resin layer than the conventional one (which has more than 40μm thick), thereby saving the quantity of material and facilitating the pattern visual inspection through the layer 15 and the reading of the mark for detecting the measuring position.
COPYRIGHT: (C)1982,JPO&Japio
JP14486180A 1980-10-15 1980-10-15 Semiconductor device Pending JPS5768059A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14486180A JPS5768059A (en) 1980-10-15 1980-10-15 Semiconductor device
DE19813141000 DE3141000A1 (en) 1980-10-15 1981-10-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14486180A JPS5768059A (en) 1980-10-15 1980-10-15 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5768059A true JPS5768059A (en) 1982-04-26

Family

ID=15372098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14486180A Pending JPS5768059A (en) 1980-10-15 1980-10-15 Semiconductor device

Country Status (2)

Country Link
JP (1) JPS5768059A (en)
DE (1) DE3141000A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61501537A (en) * 1984-03-22 1986-07-24 モステック・コ−ポレイション nitride bonding layer

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59191353A (en) * 1983-04-15 1984-10-30 Hitachi Ltd Electronic device having multilayer interconnection structure
US5449950A (en) * 1984-04-16 1995-09-12 Canon Kabushiki Kaisha Photosensor with organic and inorganic insulation layers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568659A (en) * 1978-11-20 1980-05-23 Hitachi Ltd Semiconductor device and manufacturing method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS525586Y1 (en) * 1969-03-28 1977-02-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568659A (en) * 1978-11-20 1980-05-23 Hitachi Ltd Semiconductor device and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61501537A (en) * 1984-03-22 1986-07-24 モステック・コ−ポレイション nitride bonding layer

Also Published As

Publication number Publication date
DE3141000A1 (en) 1982-06-03

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