DE2926334C2 - - Google Patents
Info
- Publication number
- DE2926334C2 DE2926334C2 DE2926334A DE2926334A DE2926334C2 DE 2926334 C2 DE2926334 C2 DE 2926334C2 DE 2926334 A DE2926334 A DE 2926334A DE 2926334 A DE2926334 A DE 2926334A DE 2926334 C2 DE2926334 C2 DE 2926334C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- dopant
- electrodes
- substrate
- doped layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 31
- 239000002019 doping agent Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 16
- 238000002513 implantation Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 8
- 239000007943 implant Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 43
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 25
- 238000012546 transfer Methods 0.000 description 24
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 21
- 235000012239 silicon dioxide Nutrition 0.000 description 21
- 239000000377 silicon dioxide Substances 0.000 description 21
- 229910052698 phosphorus Inorganic materials 0.000 description 19
- 239000011574 phosphorus Substances 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000012549 training Methods 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- -1 boron ions Chemical class 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910003944 H3 PO4 Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000010871 livestock manure Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/462—Buried-channel CCD
- H10D44/464—Two-phase CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/920,594 US4216574A (en) | 1978-06-29 | 1978-06-29 | Charge coupled device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2926334A1 DE2926334A1 (de) | 1980-01-03 |
| DE2926334C2 true DE2926334C2 (en, 2012) | 1990-03-22 |
Family
ID=25444025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19792926334 Granted DE2926334A1 (de) | 1978-06-29 | 1979-06-29 | Verfahren zur herstellung von halbleiterbauelementen, insbesondere von ladungsgekoppelten bauelementen |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4216574A (en, 2012) |
| JP (1) | JPS558100A (en, 2012) |
| AU (1) | AU524673B2 (en, 2012) |
| CA (1) | CA1139879A (en, 2012) |
| DE (1) | DE2926334A1 (en, 2012) |
| FR (1) | FR2430093A1 (en, 2012) |
| GB (1) | GB2024507B (en, 2012) |
| IT (1) | IT1120458B (en, 2012) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4364164A (en) * | 1978-12-04 | 1982-12-21 | Westinghouse Electric Corp. | Method of making a sloped insulator charge-coupled device |
| US4360963A (en) * | 1981-07-31 | 1982-11-30 | Rca Corporation | Method of making CCD imagers with reduced defects |
| US4521896A (en) * | 1982-05-14 | 1985-06-04 | Westinghouse Electric Co. | Simultaneous sampling dual transfer channel charge coupled device |
| US4486946A (en) * | 1983-07-12 | 1984-12-11 | Control Data Corporation | Method for using titanium-tungsten alloy as a barrier metal in silicon semiconductor processing |
| FR2578683B1 (fr) * | 1985-03-08 | 1987-08-28 | Thomson Csf | Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede |
| US4607429A (en) * | 1985-03-29 | 1986-08-26 | Rca Corporation | Method of making a charge-coupled device image sensor |
| JPS6436073A (en) * | 1987-07-31 | 1989-02-07 | Toshiba Corp | Manufacture of semiconductor device |
| US4959701A (en) * | 1989-05-01 | 1990-09-25 | Westinghouse Electric Corp. | Variable sensitivity floating gate photosensor |
| US5302543A (en) * | 1989-11-06 | 1994-04-12 | Mitsubishi Denki Kabushiki Kaisha | Method of making a charge coupled device |
| AU638812B2 (en) * | 1990-04-16 | 1993-07-08 | Digital Equipment Corporation | A method of operating a semiconductor device |
| US6884701B2 (en) * | 1991-04-27 | 2005-04-26 | Hidemi Takasu | Process for fabricating semiconductor device |
| JP2910394B2 (ja) * | 1992-03-19 | 1999-06-23 | 日本電気株式会社 | 固体撮像素子およびその製造方法 |
| JP2874665B2 (ja) * | 1996-09-27 | 1999-03-24 | 日本電気株式会社 | 電荷転送装置の製造方法 |
| KR100524800B1 (ko) * | 2002-09-25 | 2005-11-02 | 주식회사 하이닉스반도체 | 반도체 소자의 이중 도핑 분포를 갖는 콘택플러그 형성 방법 |
| JP2007302109A (ja) * | 2006-05-11 | 2007-11-22 | Yamaha Motor Co Ltd | 鞍乗型車両 |
| EP3763609B1 (en) | 2012-11-12 | 2022-04-06 | Indian Motorcycle International, LLC | Two-wheeled vehicle |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3852799A (en) * | 1973-04-27 | 1974-12-03 | Bell Telephone Labor Inc | Buried channel charge coupled apparatus |
| GB1483647A (en) * | 1973-09-24 | 1977-08-24 | Hewlett Packard Co | Charge transfer device |
| US3927468A (en) * | 1973-12-28 | 1975-12-23 | Fairchild Camera Instr Co | Self aligned CCD element fabrication method therefor |
| FR2257145B1 (en, 2012) * | 1974-01-04 | 1976-11-26 | Commissariat Energie Atomique | |
| US3931674A (en) * | 1974-02-08 | 1976-01-13 | Fairchild Camera And Instrument Corporation | Self aligned CCD element including two levels of electrodes and method of manufacture therefor |
| NL7401939A (nl) * | 1974-02-13 | 1975-08-15 | Philips Nv | Ladingsgekoppelde inrichting. |
| JPS5172288A (ja) * | 1974-12-20 | 1976-06-22 | Fujitsu Ltd | Handotaisochi |
| US3950188A (en) * | 1975-05-12 | 1976-04-13 | Trw Inc. | Method of patterning polysilicon |
| US4063992A (en) * | 1975-05-27 | 1977-12-20 | Fairchild Camera And Instrument Corporation | Edge etch method for producing narrow openings to the surface of materials |
| US4062699A (en) * | 1976-02-20 | 1977-12-13 | Western Digital Corporation | Method for fabricating diffusion self-aligned short channel MOS device |
-
1978
- 1978-06-29 US US05/920,594 patent/US4216574A/en not_active Expired - Lifetime
-
1979
- 1979-06-05 CA CA000329131A patent/CA1139879A/en not_active Expired
- 1979-06-08 AU AU47892/79A patent/AU524673B2/en not_active Ceased
- 1979-06-11 GB GB7920241A patent/GB2024507B/en not_active Expired
- 1979-06-22 FR FR7916090A patent/FR2430093A1/fr active Granted
- 1979-06-28 IT IT49571/79A patent/IT1120458B/it active
- 1979-06-29 DE DE19792926334 patent/DE2926334A1/de active Granted
- 1979-06-29 JP JP8255779A patent/JPS558100A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6318345B2 (en, 2012) | 1988-04-18 |
| AU4789279A (en) | 1980-01-03 |
| DE2926334A1 (de) | 1980-01-03 |
| GB2024507A (en) | 1980-01-09 |
| AU524673B2 (en) | 1982-09-30 |
| US4216574A (en) | 1980-08-12 |
| JPS558100A (en) | 1980-01-21 |
| GB2024507B (en) | 1982-07-28 |
| IT7949571A0 (it) | 1979-06-28 |
| FR2430093B1 (en, 2012) | 1985-03-01 |
| CA1139879A (en) | 1983-01-18 |
| FR2430093A1 (fr) | 1980-01-25 |
| IT1120458B (it) | 1986-03-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8330 | Complete renunciation |