GB1483647A - Charge transfer device - Google Patents
Charge transfer deviceInfo
- Publication number
- GB1483647A GB1483647A GB3640574A GB3640574A GB1483647A GB 1483647 A GB1483647 A GB 1483647A GB 3640574 A GB3640574 A GB 3640574A GB 3640574 A GB3640574 A GB 3640574A GB 1483647 A GB1483647 A GB 1483647A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- charge
- transfer
- section
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 abstract 5
- 239000002019 doping agent Substances 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000002939 deleterious effect Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
- H01L29/76841—Two-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
1483647 Charge-coupled devices HEWLETTPACKARD CO 19 Aug 1974 [24 Sept 1973] 36405/74 Heading H1K A charge-coupled device formed in a P-type substrate 11 has an N-type ion impanted surface layer 23, in which charge transfer actually occurs, and a plurality of shallower P-type ion-inplanted surface regions 25 located relative to the overlying 2-phase connected electrodes 17, 19, 21 so as to inpart directionality to the transfer of charges. An additional funtion of the regions 25 is to divert charge in the course of transfer between adjacent storage areas into the bulk of the layer 23, as shown by arrows 27, and away from the deleterious effect of trapping centres at the interface between the semiconductor and the insulation 13. The layer 23 serves to increase charge carrying capacity. Each electrode may include a first storage section 17A, &c., and a second transfer section, 17B &c., the two sections being separated by a second insulating layer 15 and each second section 17B overlying a corresponding P-type region 25, which region is formed by implantation through a masking layer constituted by the first electrode sections 17A, &c. The two sections 17A, 17B may be interconnected as shown, or the second section 17B may float electrically. Suitable materials are as follows: for the substrate 11, P-type Si, GaAs or GaP; as dopant for the layer 23, P, As or Sb; as dopant for the regions 25, B, Ga or In; as insulation 13, 15, SiO 2 , Si 3 N 4 or Al 2 O 3 ; as electrodes 17 &c., polysilicon or thin metal. Conductivity types may be reversed. Reference has been directed by the Comptroller to Specification 1,376,640.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US40045373A | 1973-09-24 | 1973-09-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1483647A true GB1483647A (en) | 1977-08-24 |
Family
ID=23583680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3640574A Expired GB1483647A (en) | 1973-09-24 | 1974-08-19 | Charge transfer device |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS555867B2 (en) |
| DE (1) | DE2441531A1 (en) |
| FR (1) | FR2245088B3 (en) |
| GB (1) | GB1483647A (en) |
| HK (1) | HK69278A (en) |
| NL (1) | NL7411365A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4216574A (en) * | 1978-06-29 | 1980-08-12 | Raytheon Company | Charge coupled device |
| GB2033152A (en) * | 1978-10-06 | 1980-05-14 | Hughes Aircraft Co | Heterojunction charge-coupled device |
| JPH03227027A (en) * | 1990-01-31 | 1991-10-08 | Matsushita Electron Corp | Charge transfer device |
-
1974
- 1974-08-19 GB GB3640574A patent/GB1483647A/en not_active Expired
- 1974-08-27 NL NL7411365A patent/NL7411365A/en not_active Application Discontinuation
- 1974-08-30 DE DE19742441531 patent/DE2441531A1/en active Pending
- 1974-09-20 FR FR7431804A patent/FR2245088B3/fr not_active Expired
- 1974-09-25 JP JP11034174A patent/JPS555867B2/ja not_active Expired
-
1978
- 1978-11-23 HK HK69278A patent/HK69278A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2245088A1 (en) | 1975-04-18 |
| NL7411365A (en) | 1975-03-26 |
| JPS5057780A (en) | 1975-05-20 |
| FR2245088B3 (en) | 1976-10-22 |
| HK69278A (en) | 1978-12-01 |
| JPS555867B2 (en) | 1980-02-12 |
| DE2441531A1 (en) | 1975-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5338961A (en) | High power MOSFET with low on-resistance and high breakdown voltage | |
| US4642666A (en) | High power MOSFET with low on-resistance and high breakdown voltage | |
| US4959699A (en) | High power MOSFET with low on-resistance and high breakdown voltage | |
| GB1442464A (en) | Charge-coupled devices | |
| US6798016B2 (en) | Trench MOS device and process for radhard device | |
| GB1369606A (en) | Charge-coupled semiconductor device | |
| JPS6446981A (en) | Semiconductor device | |
| GB1481364A (en) | Semiconductor charge coupled device structures | |
| GB1153428A (en) | Improvements in Semiconductor Devices. | |
| CA1046638A (en) | Bulk charge coupled device with high doping at buried pn-junction | |
| EP0071335B1 (en) | Field effect transistor | |
| GB1220306A (en) | Triac structure | |
| GB1483647A (en) | Charge transfer device | |
| CN211265483U (en) | Power semiconductor device | |
| EP0756332B1 (en) | MOS capacitor of a semiconductor device | |
| JPS61198676A (en) | Semiconductor integrated circuit device | |
| GB1248051A (en) | Method of making insulated gate field effect transistors | |
| ES340523A1 (en) | Semiconductor devices having a field effect transistor structure | |
| EP0178030B1 (en) | Charge-coupled device | |
| GB1432985A (en) | Charge-coupled arrangements | |
| US3988773A (en) | Self-registered surface charge receive and regeneration devices and methods | |
| US5241199A (en) | Charge coupled device (CCD) having high transfer efficiency at low temperature operation | |
| SU476623A1 (en) | Charge-coupled device | |
| GB1446236A (en) | Charge transfer semiconductor devices | |
| JPS5583380A (en) | Infrared-ray detecting cid |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |