IT1120458B - Procedimento per la produzione di dispositivi a semiconduttore accoppiati a trasferimenti di cariche - Google Patents
Procedimento per la produzione di dispositivi a semiconduttore accoppiati a trasferimenti di caricheInfo
- Publication number
- IT1120458B IT1120458B IT49571/79A IT4957179A IT1120458B IT 1120458 B IT1120458 B IT 1120458B IT 49571/79 A IT49571/79 A IT 49571/79A IT 4957179 A IT4957179 A IT 4957179A IT 1120458 B IT1120458 B IT 1120458B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- production
- semiconductor devices
- devices coupled
- charge transfers
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
- H01L29/76841—Two-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/920,594 US4216574A (en) | 1978-06-29 | 1978-06-29 | Charge coupled device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT7949571A0 IT7949571A0 (it) | 1979-06-28 |
| IT1120458B true IT1120458B (it) | 1986-03-26 |
Family
ID=25444025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT49571/79A IT1120458B (it) | 1978-06-29 | 1979-06-28 | Procedimento per la produzione di dispositivi a semiconduttore accoppiati a trasferimenti di cariche |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4216574A (it) |
| JP (1) | JPS558100A (it) |
| AU (1) | AU524673B2 (it) |
| CA (1) | CA1139879A (it) |
| DE (1) | DE2926334A1 (it) |
| FR (1) | FR2430093A1 (it) |
| GB (1) | GB2024507B (it) |
| IT (1) | IT1120458B (it) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4364164A (en) * | 1978-12-04 | 1982-12-21 | Westinghouse Electric Corp. | Method of making a sloped insulator charge-coupled device |
| US4360963A (en) * | 1981-07-31 | 1982-11-30 | Rca Corporation | Method of making CCD imagers with reduced defects |
| US4521896A (en) * | 1982-05-14 | 1985-06-04 | Westinghouse Electric Co. | Simultaneous sampling dual transfer channel charge coupled device |
| US4486946A (en) * | 1983-07-12 | 1984-12-11 | Control Data Corporation | Method for using titanium-tungsten alloy as a barrier metal in silicon semiconductor processing |
| FR2578683B1 (fr) * | 1985-03-08 | 1987-08-28 | Thomson Csf | Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede |
| US4607429A (en) * | 1985-03-29 | 1986-08-26 | Rca Corporation | Method of making a charge-coupled device image sensor |
| JPS6436073A (en) * | 1987-07-31 | 1989-02-07 | Toshiba Corp | Manufacture of semiconductor device |
| US4959701A (en) * | 1989-05-01 | 1990-09-25 | Westinghouse Electric Corp. | Variable sensitivity floating gate photosensor |
| US5302543A (en) * | 1989-11-06 | 1994-04-12 | Mitsubishi Denki Kabushiki Kaisha | Method of making a charge coupled device |
| AU638812B2 (en) * | 1990-04-16 | 1993-07-08 | Digital Equipment Corporation | A method of operating a semiconductor device |
| US6884701B2 (en) * | 1991-04-27 | 2005-04-26 | Hidemi Takasu | Process for fabricating semiconductor device |
| JP2910394B2 (ja) * | 1992-03-19 | 1999-06-23 | 日本電気株式会社 | 固体撮像素子およびその製造方法 |
| JP2874665B2 (ja) * | 1996-09-27 | 1999-03-24 | 日本電気株式会社 | 電荷転送装置の製造方法 |
| KR100524800B1 (ko) * | 2002-09-25 | 2005-11-02 | 주식회사 하이닉스반도체 | 반도체 소자의 이중 도핑 분포를 갖는 콘택플러그 형성 방법 |
| JP2007302109A (ja) * | 2006-05-11 | 2007-11-22 | Yamaha Motor Co Ltd | 鞍乗型車両 |
| US9908577B2 (en) | 2012-11-12 | 2018-03-06 | Indian Motorcycle International, LLC | Two-wheeled vehicle |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3852799A (en) * | 1973-04-27 | 1974-12-03 | Bell Telephone Labor Inc | Buried channel charge coupled apparatus |
| GB1483647A (en) * | 1973-09-24 | 1977-08-24 | Hewlett Packard Co | Charge transfer device |
| US3927468A (en) * | 1973-12-28 | 1975-12-23 | Fairchild Camera Instr Co | Self aligned CCD element fabrication method therefor |
| FR2257145B1 (it) * | 1974-01-04 | 1976-11-26 | Commissariat Energie Atomique | |
| US3931674A (en) * | 1974-02-08 | 1976-01-13 | Fairchild Camera And Instrument Corporation | Self aligned CCD element including two levels of electrodes and method of manufacture therefor |
| NL7401939A (nl) * | 1974-02-13 | 1975-08-15 | Philips Nv | Ladingsgekoppelde inrichting. |
| JPS5172288A (ja) * | 1974-12-20 | 1976-06-22 | Fujitsu Ltd | Handotaisochi |
| US3950188A (en) * | 1975-05-12 | 1976-04-13 | Trw Inc. | Method of patterning polysilicon |
| US4063992A (en) * | 1975-05-27 | 1977-12-20 | Fairchild Camera And Instrument Corporation | Edge etch method for producing narrow openings to the surface of materials |
| US4062699A (en) * | 1976-02-20 | 1977-12-13 | Western Digital Corporation | Method for fabricating diffusion self-aligned short channel MOS device |
-
1978
- 1978-06-29 US US05/920,594 patent/US4216574A/en not_active Expired - Lifetime
-
1979
- 1979-06-05 CA CA000329131A patent/CA1139879A/en not_active Expired
- 1979-06-08 AU AU47892/79A patent/AU524673B2/en not_active Ceased
- 1979-06-11 GB GB7920241A patent/GB2024507B/en not_active Expired
- 1979-06-22 FR FR7916090A patent/FR2430093A1/fr active Granted
- 1979-06-28 IT IT49571/79A patent/IT1120458B/it active
- 1979-06-29 JP JP8255779A patent/JPS558100A/ja active Granted
- 1979-06-29 DE DE19792926334 patent/DE2926334A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2024507B (en) | 1982-07-28 |
| US4216574A (en) | 1980-08-12 |
| JPS6318345B2 (it) | 1988-04-18 |
| AU4789279A (en) | 1980-01-03 |
| AU524673B2 (en) | 1982-09-30 |
| FR2430093B1 (it) | 1985-03-01 |
| GB2024507A (en) | 1980-01-09 |
| DE2926334C2 (it) | 1990-03-22 |
| CA1139879A (en) | 1983-01-18 |
| JPS558100A (en) | 1980-01-21 |
| FR2430093A1 (fr) | 1980-01-25 |
| DE2926334A1 (de) | 1980-01-03 |
| IT7949571A0 (it) | 1979-06-28 |
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