JPS6318345B2 - - Google Patents

Info

Publication number
JPS6318345B2
JPS6318345B2 JP54082557A JP8255779A JPS6318345B2 JP S6318345 B2 JPS6318345 B2 JP S6318345B2 JP 54082557 A JP54082557 A JP 54082557A JP 8255779 A JP8255779 A JP 8255779A JP S6318345 B2 JPS6318345 B2 JP S6318345B2
Authority
JP
Japan
Prior art keywords
layer
gate electrodes
doped
forming
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54082557A
Other languages
English (en)
Japanese (ja)
Other versions
JPS558100A (en
Inventor
Maachin Fueisuto Uorufugangu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of JPS558100A publication Critical patent/JPS558100A/ja
Publication of JPS6318345B2 publication Critical patent/JPS6318345B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H10D44/464—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/335—Channel regions of field-effect devices of charge-coupled devices

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP8255779A 1978-06-29 1979-06-29 Method of manufacturing charge coupled device Granted JPS558100A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/920,594 US4216574A (en) 1978-06-29 1978-06-29 Charge coupled device

Publications (2)

Publication Number Publication Date
JPS558100A JPS558100A (en) 1980-01-21
JPS6318345B2 true JPS6318345B2 (en, 2012) 1988-04-18

Family

ID=25444025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8255779A Granted JPS558100A (en) 1978-06-29 1979-06-29 Method of manufacturing charge coupled device

Country Status (8)

Country Link
US (1) US4216574A (en, 2012)
JP (1) JPS558100A (en, 2012)
AU (1) AU524673B2 (en, 2012)
CA (1) CA1139879A (en, 2012)
DE (1) DE2926334A1 (en, 2012)
FR (1) FR2430093A1 (en, 2012)
GB (1) GB2024507B (en, 2012)
IT (1) IT1120458B (en, 2012)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364164A (en) * 1978-12-04 1982-12-21 Westinghouse Electric Corp. Method of making a sloped insulator charge-coupled device
US4360963A (en) * 1981-07-31 1982-11-30 Rca Corporation Method of making CCD imagers with reduced defects
US4521896A (en) * 1982-05-14 1985-06-04 Westinghouse Electric Co. Simultaneous sampling dual transfer channel charge coupled device
US4486946A (en) * 1983-07-12 1984-12-11 Control Data Corporation Method for using titanium-tungsten alloy as a barrier metal in silicon semiconductor processing
FR2578683B1 (fr) * 1985-03-08 1987-08-28 Thomson Csf Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede
US4607429A (en) * 1985-03-29 1986-08-26 Rca Corporation Method of making a charge-coupled device image sensor
JPS6436073A (en) * 1987-07-31 1989-02-07 Toshiba Corp Manufacture of semiconductor device
US4959701A (en) * 1989-05-01 1990-09-25 Westinghouse Electric Corp. Variable sensitivity floating gate photosensor
US5302543A (en) * 1989-11-06 1994-04-12 Mitsubishi Denki Kabushiki Kaisha Method of making a charge coupled device
AU638812B2 (en) * 1990-04-16 1993-07-08 Digital Equipment Corporation A method of operating a semiconductor device
US6884701B2 (en) * 1991-04-27 2005-04-26 Hidemi Takasu Process for fabricating semiconductor device
JP2910394B2 (ja) * 1992-03-19 1999-06-23 日本電気株式会社 固体撮像素子およびその製造方法
JP2874665B2 (ja) * 1996-09-27 1999-03-24 日本電気株式会社 電荷転送装置の製造方法
KR100524800B1 (ko) * 2002-09-25 2005-11-02 주식회사 하이닉스반도체 반도체 소자의 이중 도핑 분포를 갖는 콘택플러그 형성 방법
JP2007302109A (ja) * 2006-05-11 2007-11-22 Yamaha Motor Co Ltd 鞍乗型車両
EP3763609B1 (en) 2012-11-12 2022-04-06 Indian Motorcycle International, LLC Two-wheeled vehicle

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852799A (en) * 1973-04-27 1974-12-03 Bell Telephone Labor Inc Buried channel charge coupled apparatus
GB1483647A (en) * 1973-09-24 1977-08-24 Hewlett Packard Co Charge transfer device
US3927468A (en) * 1973-12-28 1975-12-23 Fairchild Camera Instr Co Self aligned CCD element fabrication method therefor
FR2257145B1 (en, 2012) * 1974-01-04 1976-11-26 Commissariat Energie Atomique
US3931674A (en) * 1974-02-08 1976-01-13 Fairchild Camera And Instrument Corporation Self aligned CCD element including two levels of electrodes and method of manufacture therefor
NL7401939A (nl) * 1974-02-13 1975-08-15 Philips Nv Ladingsgekoppelde inrichting.
JPS5172288A (ja) * 1974-12-20 1976-06-22 Fujitsu Ltd Handotaisochi
US3950188A (en) * 1975-05-12 1976-04-13 Trw Inc. Method of patterning polysilicon
US4063992A (en) * 1975-05-27 1977-12-20 Fairchild Camera And Instrument Corporation Edge etch method for producing narrow openings to the surface of materials
US4062699A (en) * 1976-02-20 1977-12-13 Western Digital Corporation Method for fabricating diffusion self-aligned short channel MOS device

Also Published As

Publication number Publication date
AU4789279A (en) 1980-01-03
DE2926334A1 (de) 1980-01-03
GB2024507A (en) 1980-01-09
AU524673B2 (en) 1982-09-30
US4216574A (en) 1980-08-12
JPS558100A (en) 1980-01-21
GB2024507B (en) 1982-07-28
DE2926334C2 (en, 2012) 1990-03-22
IT7949571A0 (it) 1979-06-28
FR2430093B1 (en, 2012) 1985-03-01
CA1139879A (en) 1983-01-18
FR2430093A1 (fr) 1980-01-25
IT1120458B (it) 1986-03-26

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