DE2648275A1 - Einkristallzuechtungsverfahren fuer ii-vi- und iii-v-verbindungshalbleiter - Google Patents

Einkristallzuechtungsverfahren fuer ii-vi- und iii-v-verbindungshalbleiter

Info

Publication number
DE2648275A1
DE2648275A1 DE19762648275 DE2648275A DE2648275A1 DE 2648275 A1 DE2648275 A1 DE 2648275A1 DE 19762648275 DE19762648275 DE 19762648275 DE 2648275 A DE2648275 A DE 2648275A DE 2648275 A1 DE2648275 A1 DE 2648275A1
Authority
DE
Germany
Prior art keywords
temperature
melt
reactant
seed crystal
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19762648275
Other languages
German (de)
English (en)
Inventor
William Andrew Gault
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE2648275A1 publication Critical patent/DE2648275A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Polyethers (AREA)
DE19762648275 1975-10-30 1976-10-25 Einkristallzuechtungsverfahren fuer ii-vi- und iii-v-verbindungshalbleiter Withdrawn DE2648275A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/627,319 US4083748A (en) 1975-10-30 1975-10-30 Method of forming and growing a single crystal of a semiconductor compound

Publications (1)

Publication Number Publication Date
DE2648275A1 true DE2648275A1 (de) 1977-05-05

Family

ID=24514176

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762648275 Withdrawn DE2648275A1 (de) 1975-10-30 1976-10-25 Einkristallzuechtungsverfahren fuer ii-vi- und iii-v-verbindungshalbleiter

Country Status (8)

Country Link
US (1) US4083748A (enExample)
JP (2) JPS5268297A (enExample)
CA (1) CA1080588A (enExample)
DE (1) DE2648275A1 (enExample)
FR (1) FR2329344A1 (enExample)
GB (1) GB1557287A (enExample)
IT (1) IT1075860B (enExample)
NL (1) NL7612006A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3129449A1 (de) * 1981-07-25 1983-02-10 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt "verfahren zur regelung des partialdruckes mindestens eines stoffes oder stoffgemisches"

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5418816A (en) * 1977-07-14 1979-02-13 Tokyo Shibaura Electric Co Sintered members having good corrosionn resistance to gallium phosphide and gallium arsenide
FR2416729A1 (fr) * 1978-02-09 1979-09-07 Radiotechnique Compelec Perfectionnement au procede de fabrication d'un monocristal de compose iii-v''
US4289571A (en) * 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US4299650A (en) * 1979-10-12 1981-11-10 Bell Telephone Laboratories, Incorporated Minimization of strain in single crystals
US4404172A (en) * 1981-01-05 1983-09-13 Western Electric Company, Inc. Method and apparatus for forming and growing a single crystal of a semiconductor compound
US4652332A (en) * 1984-11-29 1987-03-24 The United States Of America As Represented By The United States Department Of Energy Method of synthesizing and growing copper-indium-diselenide (CuInSe2) crystals
US5312506A (en) * 1987-06-15 1994-05-17 Mitsui Mining Company, Limited Method for growing single crystals from melt
US5116456A (en) * 1988-04-18 1992-05-26 Solon Technologies, Inc. Apparatus and method for growth of large single crystals in plate/slab form
US5057287A (en) * 1988-11-01 1991-10-15 Sfa, Inc. Liquid encapsulated zone melting crystal growth method and apparatus
US5007980A (en) * 1988-11-01 1991-04-16 Sfa, Inc. Liquid encapsulated zone melting crystal growth method and apparatus
JPH02160687A (ja) * 1988-12-14 1990-06-20 Mitsui Mining Co Ltd 単結晶製造方法
US4999082A (en) * 1989-09-14 1991-03-12 Akzo America Inc. Process for producing monocrystalline group II-IV or group III-V compounds and products thereof
US5169486A (en) * 1991-03-06 1992-12-08 Bestal Corporation Crystal growth apparatus and process
JPH05139886A (ja) * 1991-11-21 1993-06-08 Toshiba Corp 砒素化合物単結晶の製造方法
KR100246712B1 (ko) * 1994-06-02 2000-03-15 구마모토 마사히로 화합물 단결정의 제조방법 및 제조장치
JP3201305B2 (ja) 1996-04-26 2001-08-20 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体結晶の製造方法
JP3596337B2 (ja) 1998-03-25 2004-12-02 住友電気工業株式会社 化合物半導体結晶の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1911715A1 (de) * 1968-03-08 1969-10-09 Sony Corp Verfahren zur Herstellung eines Halbleiter-Einkristalls
AT299127B (de) * 1968-03-22 1972-06-12 Philips Nv Verfahren zur Herstellung eines Kristalles einer halbleitenden A<III>B<V> -Verbindung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3305313A (en) * 1963-12-18 1967-02-21 Philco Ford Corp Method of producing gallium phosphide in crystalline form
SE338761B (enExample) * 1967-10-20 1971-09-20 Philips Nv
US3520810A (en) * 1968-01-15 1970-07-21 Ibm Manufacture of single crystal semiconductors
FR1568042A (enExample) * 1968-01-18 1969-05-23
GB1352449A (en) * 1970-07-28 1974-05-08 Sumitomo Electric Industries Semiconductor production
CA956867A (en) * 1970-12-04 1974-10-29 Albert G. Fischer Method and apparatus for forming crystalline bodies of a semiconductor material
FR2175595B1 (enExample) * 1972-03-15 1974-09-13 Radiotechnique Compelec
JPS5148152B2 (enExample) * 1972-05-11 1976-12-18
US3944393A (en) * 1973-11-21 1976-03-16 Monsanto Company Apparatus for horizontal production of single crystal structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1911715A1 (de) * 1968-03-08 1969-10-09 Sony Corp Verfahren zur Herstellung eines Halbleiter-Einkristalls
AT299127B (de) * 1968-03-22 1972-06-12 Philips Nv Verfahren zur Herstellung eines Kristalles einer halbleitenden A<III>B<V> -Verbindung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3129449A1 (de) * 1981-07-25 1983-02-10 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt "verfahren zur regelung des partialdruckes mindestens eines stoffes oder stoffgemisches"

Also Published As

Publication number Publication date
IT1075860B (it) 1985-04-22
US4083748A (en) 1978-04-11
JPS5268297A (en) 1977-06-06
JPS54163672A (en) 1979-12-26
NL7612006A (nl) 1977-05-03
GB1557287A (en) 1979-12-05
JPS6046075B2 (ja) 1985-10-14
FR2329344B1 (enExample) 1981-10-02
FR2329344A1 (fr) 1977-05-27
CA1080588A (en) 1980-07-01

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Legal Events

Date Code Title Description
8126 Change of the secondary classification

Free format text: C30B 29/40 C30B 29/48

8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: AT & T TECHNOLOGIES, INC., NEW YORK, N.Y., US

8128 New person/name/address of the agent

Representative=s name: BLUMBACH, P., DIPL.-ING., 6200 WIESBADEN WESER, W.

8139 Disposal/non-payment of the annual fee