IT1075860B - Procedimento per la crescita di un monocristallo in un composto semiconduttore - Google Patents
Procedimento per la crescita di un monocristallo in un composto semiconduttoreInfo
- Publication number
- IT1075860B IT1075860B IT28818/76A IT2881876A IT1075860B IT 1075860 B IT1075860 B IT 1075860B IT 28818/76 A IT28818/76 A IT 28818/76A IT 2881876 A IT2881876 A IT 2881876A IT 1075860 B IT1075860 B IT 1075860B
- Authority
- IT
- Italy
- Prior art keywords
- monocrystal
- growth
- procedure
- semiconductor compound
- semiconductor
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Polyethers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/627,319 US4083748A (en) | 1975-10-30 | 1975-10-30 | Method of forming and growing a single crystal of a semiconductor compound |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1075860B true IT1075860B (it) | 1985-04-22 |
Family
ID=24514176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT28818/76A IT1075860B (it) | 1975-10-30 | 1976-10-28 | Procedimento per la crescita di un monocristallo in un composto semiconduttore |
Country Status (8)
Country | Link |
---|---|
US (1) | US4083748A (it) |
JP (2) | JPS5268297A (it) |
CA (1) | CA1080588A (it) |
DE (1) | DE2648275A1 (it) |
FR (1) | FR2329344A1 (it) |
GB (1) | GB1557287A (it) |
IT (1) | IT1075860B (it) |
NL (1) | NL7612006A (it) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5418816A (en) * | 1977-07-14 | 1979-02-13 | Tokyo Shibaura Electric Co | Sintered members having good corrosionn resistance to gallium phosphide and gallium arsenide |
FR2416729A1 (fr) * | 1978-02-09 | 1979-09-07 | Radiotechnique Compelec | Perfectionnement au procede de fabrication d'un monocristal de compose iii-v'' |
US4289571A (en) * | 1979-06-25 | 1981-09-15 | Energy Materials Corporation | Method and apparatus for producing crystalline ribbons |
US4299650A (en) * | 1979-10-12 | 1981-11-10 | Bell Telephone Laboratories, Incorporated | Minimization of strain in single crystals |
US4404172A (en) * | 1981-01-05 | 1983-09-13 | Western Electric Company, Inc. | Method and apparatus for forming and growing a single crystal of a semiconductor compound |
DE3129449A1 (de) * | 1981-07-25 | 1983-02-10 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | "verfahren zur regelung des partialdruckes mindestens eines stoffes oder stoffgemisches" |
US4652332A (en) * | 1984-11-29 | 1987-03-24 | The United States Of America As Represented By The United States Department Of Energy | Method of synthesizing and growing copper-indium-diselenide (CuInSe2) crystals |
US5312506A (en) * | 1987-06-15 | 1994-05-17 | Mitsui Mining Company, Limited | Method for growing single crystals from melt |
US5116456A (en) * | 1988-04-18 | 1992-05-26 | Solon Technologies, Inc. | Apparatus and method for growth of large single crystals in plate/slab form |
US5007980A (en) * | 1988-11-01 | 1991-04-16 | Sfa, Inc. | Liquid encapsulated zone melting crystal growth method and apparatus |
US5057287A (en) * | 1988-11-01 | 1991-10-15 | Sfa, Inc. | Liquid encapsulated zone melting crystal growth method and apparatus |
JPH02160687A (ja) * | 1988-12-14 | 1990-06-20 | Mitsui Mining Co Ltd | 単結晶製造方法 |
US4999082A (en) * | 1989-09-14 | 1991-03-12 | Akzo America Inc. | Process for producing monocrystalline group II-IV or group III-V compounds and products thereof |
US5169486A (en) * | 1991-03-06 | 1992-12-08 | Bestal Corporation | Crystal growth apparatus and process |
JPH05139886A (ja) * | 1991-11-21 | 1993-06-08 | Toshiba Corp | 砒素化合物単結晶の製造方法 |
DE19580737C2 (de) * | 1994-06-02 | 2002-02-21 | Kobe Steel Ltd | Verfahren und Vorrichtung zur Herstellung von Verbindungs-Einkristallen |
JP3201305B2 (ja) | 1996-04-26 | 2001-08-20 | 住友電気工業株式会社 | Iii−v族化合物半導体結晶の製造方法 |
JP3596337B2 (ja) | 1998-03-25 | 2004-12-02 | 住友電気工業株式会社 | 化合物半導体結晶の製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3305313A (en) * | 1963-12-18 | 1967-02-21 | Philco Ford Corp | Method of producing gallium phosphide in crystalline form |
SE338761B (it) * | 1967-10-20 | 1971-09-20 | Philips Nv | |
US3520810A (en) * | 1968-01-15 | 1970-07-21 | Ibm | Manufacture of single crystal semiconductors |
FR1568042A (it) * | 1968-01-18 | 1969-05-23 | ||
JPS4820106B1 (it) * | 1968-03-08 | 1973-06-19 | ||
FR1569785A (it) * | 1968-03-22 | 1969-06-06 | ||
GB1352449A (en) * | 1970-07-28 | 1974-05-08 | Sumitomo Electric Industries | Semiconductor production |
CA956867A (en) * | 1970-12-04 | 1974-10-29 | Albert G. Fischer | Method and apparatus for forming crystalline bodies of a semiconductor material |
FR2175595B1 (it) * | 1972-03-15 | 1974-09-13 | Radiotechnique Compelec | |
JPS5148152B2 (it) * | 1972-05-11 | 1976-12-18 | ||
US3944393A (en) * | 1973-11-21 | 1976-03-16 | Monsanto Company | Apparatus for horizontal production of single crystal structure |
-
1975
- 1975-10-30 US US05/627,319 patent/US4083748A/en not_active Expired - Lifetime
-
1976
- 1976-10-21 CA CA263,857A patent/CA1080588A/en not_active Expired
- 1976-10-25 DE DE19762648275 patent/DE2648275A1/de not_active Withdrawn
- 1976-10-27 JP JP51129258A patent/JPS5268297A/ja active Pending
- 1976-10-28 IT IT28818/76A patent/IT1075860B/it active
- 1976-10-29 FR FR7632927A patent/FR2329344A1/fr active Granted
- 1976-10-29 JP JP51129558A patent/JPS6046075B2/ja not_active Expired
- 1976-10-29 NL NL7612006A patent/NL7612006A/xx not_active Application Discontinuation
- 1976-10-29 GB GB45039/76A patent/GB1557287A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2329344A1 (fr) | 1977-05-27 |
JPS54163672A (en) | 1979-12-26 |
DE2648275A1 (de) | 1977-05-05 |
CA1080588A (en) | 1980-07-01 |
US4083748A (en) | 1978-04-11 |
GB1557287A (en) | 1979-12-05 |
FR2329344B1 (it) | 1981-10-02 |
JPS6046075B2 (ja) | 1985-10-14 |
JPS5268297A (en) | 1977-06-06 |
NL7612006A (nl) | 1977-05-03 |
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