IT1075860B - Procedimento per la crescita di un monocristallo in un composto semiconduttore - Google Patents

Procedimento per la crescita di un monocristallo in un composto semiconduttore

Info

Publication number
IT1075860B
IT1075860B IT28818/76A IT2881876A IT1075860B IT 1075860 B IT1075860 B IT 1075860B IT 28818/76 A IT28818/76 A IT 28818/76A IT 2881876 A IT2881876 A IT 2881876A IT 1075860 B IT1075860 B IT 1075860B
Authority
IT
Italy
Prior art keywords
monocrystal
growth
procedure
semiconductor compound
semiconductor
Prior art date
Application number
IT28818/76A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of IT1075860B publication Critical patent/IT1075860B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Polyethers (AREA)
IT28818/76A 1975-10-30 1976-10-28 Procedimento per la crescita di un monocristallo in un composto semiconduttore IT1075860B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/627,319 US4083748A (en) 1975-10-30 1975-10-30 Method of forming and growing a single crystal of a semiconductor compound

Publications (1)

Publication Number Publication Date
IT1075860B true IT1075860B (it) 1985-04-22

Family

ID=24514176

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28818/76A IT1075860B (it) 1975-10-30 1976-10-28 Procedimento per la crescita di un monocristallo in un composto semiconduttore

Country Status (8)

Country Link
US (1) US4083748A (it)
JP (2) JPS5268297A (it)
CA (1) CA1080588A (it)
DE (1) DE2648275A1 (it)
FR (1) FR2329344A1 (it)
GB (1) GB1557287A (it)
IT (1) IT1075860B (it)
NL (1) NL7612006A (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5418816A (en) * 1977-07-14 1979-02-13 Tokyo Shibaura Electric Co Sintered members having good corrosionn resistance to gallium phosphide and gallium arsenide
FR2416729A1 (fr) * 1978-02-09 1979-09-07 Radiotechnique Compelec Perfectionnement au procede de fabrication d'un monocristal de compose iii-v''
US4289571A (en) * 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US4299650A (en) * 1979-10-12 1981-11-10 Bell Telephone Laboratories, Incorporated Minimization of strain in single crystals
US4404172A (en) * 1981-01-05 1983-09-13 Western Electric Company, Inc. Method and apparatus for forming and growing a single crystal of a semiconductor compound
DE3129449A1 (de) * 1981-07-25 1983-02-10 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt "verfahren zur regelung des partialdruckes mindestens eines stoffes oder stoffgemisches"
US4652332A (en) * 1984-11-29 1987-03-24 The United States Of America As Represented By The United States Department Of Energy Method of synthesizing and growing copper-indium-diselenide (CuInSe2) crystals
US5312506A (en) * 1987-06-15 1994-05-17 Mitsui Mining Company, Limited Method for growing single crystals from melt
US5116456A (en) * 1988-04-18 1992-05-26 Solon Technologies, Inc. Apparatus and method for growth of large single crystals in plate/slab form
US5007980A (en) * 1988-11-01 1991-04-16 Sfa, Inc. Liquid encapsulated zone melting crystal growth method and apparatus
US5057287A (en) * 1988-11-01 1991-10-15 Sfa, Inc. Liquid encapsulated zone melting crystal growth method and apparatus
JPH02160687A (ja) * 1988-12-14 1990-06-20 Mitsui Mining Co Ltd 単結晶製造方法
US4999082A (en) * 1989-09-14 1991-03-12 Akzo America Inc. Process for producing monocrystalline group II-IV or group III-V compounds and products thereof
US5169486A (en) * 1991-03-06 1992-12-08 Bestal Corporation Crystal growth apparatus and process
JPH05139886A (ja) * 1991-11-21 1993-06-08 Toshiba Corp 砒素化合物単結晶の製造方法
DE19580737C2 (de) * 1994-06-02 2002-02-21 Kobe Steel Ltd Verfahren und Vorrichtung zur Herstellung von Verbindungs-Einkristallen
JP3201305B2 (ja) 1996-04-26 2001-08-20 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体結晶の製造方法
JP3596337B2 (ja) 1998-03-25 2004-12-02 住友電気工業株式会社 化合物半導体結晶の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3305313A (en) * 1963-12-18 1967-02-21 Philco Ford Corp Method of producing gallium phosphide in crystalline form
SE338761B (it) * 1967-10-20 1971-09-20 Philips Nv
US3520810A (en) * 1968-01-15 1970-07-21 Ibm Manufacture of single crystal semiconductors
FR1568042A (it) * 1968-01-18 1969-05-23
JPS4820106B1 (it) * 1968-03-08 1973-06-19
FR1569785A (it) * 1968-03-22 1969-06-06
GB1352449A (en) * 1970-07-28 1974-05-08 Sumitomo Electric Industries Semiconductor production
CA956867A (en) * 1970-12-04 1974-10-29 Albert G. Fischer Method and apparatus for forming crystalline bodies of a semiconductor material
FR2175595B1 (it) * 1972-03-15 1974-09-13 Radiotechnique Compelec
JPS5148152B2 (it) * 1972-05-11 1976-12-18
US3944393A (en) * 1973-11-21 1976-03-16 Monsanto Company Apparatus for horizontal production of single crystal structure

Also Published As

Publication number Publication date
FR2329344A1 (fr) 1977-05-27
JPS54163672A (en) 1979-12-26
DE2648275A1 (de) 1977-05-05
CA1080588A (en) 1980-07-01
US4083748A (en) 1978-04-11
GB1557287A (en) 1979-12-05
FR2329344B1 (it) 1981-10-02
JPS6046075B2 (ja) 1985-10-14
JPS5268297A (en) 1977-06-06
NL7612006A (nl) 1977-05-03

Similar Documents

Publication Publication Date Title
IT1075860B (it) Procedimento per la crescita di un monocristallo in un composto semiconduttore
IT1055364B (it) Procedimento per la preparazione di poli p fenilentereftalammide
IT1037478B (it) Procedimento per la fabbricazione di dispositivo semiconduttori
JPS53123659A (en) Method of producing compound semiconductor wafer
IT1038052B (it) Procedimento perfezionato per la fabbricazione di dispositivi semiconduttori a base di silicio
PL200127A1 (pl) Sposob wytwarzania przyrzadu polprzewodnikowego
IT1037445B (it) Metodo per l accrescimento di strati epitassiali di silicio
IT1082522B (it) Procedimento per la preparazione di tetraidofurano
IT1080207B (it) Procedimento per la preparazione di benzotiazoli
IT1041193B (it) Perfezionamenti nei procedimenti per la fabbricazione di dispositivi a semiconduttor
IT1085033B (it) Procedimento per la preparazione di metossi-psorali
IT1069886B (it) Procedimento per l accrescimento epitassiale di uno strato semiconduttore liscio
IT1109399B (it) Procedimento per produrre monocristalli purissimi di silicio
IT1051692B (it) Procedimento per la fabbricazione di semiconduttori composti
IT1063263B (it) Dispositivo per la deposizione di materiale semiconduttore
IT1049379B (it) Procedimento per la preparazione di un tiolcarbamato
JPS52154362A (en) Method of forming semiconductor surface of 335 group compound
JPS5440075A (en) Compound semiconductor wafer
IT1075308B (it) Procedimento per la preparazione di alchil-tiometil-fenoli
IT1143732B (it) Procedimento per la preparazione di etinil-beta-ionolo
GB1551403A (en) Method of manufacturing single crystals of gallium nitride
IT1091564B (it) Metodo per la preparazione di 3-deossiantociandine
IT1028009B (it) Metodo di accrescimento di un composto semiconduttore
IT1087729B (it) Procedimento per fabbricare silicio policristallino utile per componenti a semiconduttori
IT1075506B (it) 1, 2, 3-tiadiazol-5-il-ree,procedimento per la preparazione di questi composti nonche' mezzi che li contengono,per il ritardo della crescita e per la defogliazione di piante