IT1037445B - Metodo per l accrescimento di strati epitassiali di silicio - Google Patents

Metodo per l accrescimento di strati epitassiali di silicio

Info

Publication number
IT1037445B
IT1037445B IT22520/75A IT2252075A IT1037445B IT 1037445 B IT1037445 B IT 1037445B IT 22520/75 A IT22520/75 A IT 22520/75A IT 2252075 A IT2252075 A IT 2252075A IT 1037445 B IT1037445 B IT 1037445B
Authority
IT
Italy
Prior art keywords
growth
epitaxial layers
silicon epitaxial
silicon
layers
Prior art date
Application number
IT22520/75A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT1037445B publication Critical patent/IT1037445B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT22520/75A 1974-05-28 1975-04-18 Metodo per l accrescimento di strati epitassiali di silicio IT1037445B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/473,766 US3945864A (en) 1974-05-28 1974-05-28 Method of growing thick expitaxial layers of silicon

Publications (1)

Publication Number Publication Date
IT1037445B true IT1037445B (it) 1979-11-10

Family

ID=23880890

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22520/75A IT1037445B (it) 1974-05-28 1975-04-18 Metodo per l accrescimento di strati epitassiali di silicio

Country Status (10)

Country Link
US (1) US3945864A (it)
JP (1) JPS512681A (it)
BE (1) BE829378A (it)
DE (1) DE2523067B2 (it)
FR (1) FR2272732B3 (it)
GB (1) GB1490665A (it)
IN (1) IN143139B (it)
IT (1) IT1037445B (it)
NL (1) NL7506225A (it)
SE (1) SE7506031L (it)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4950605A (it) * 1972-09-22 1974-05-16
US4509162A (en) * 1980-10-28 1985-04-02 Quixote Corporation High density recording medium
US4549926A (en) * 1982-01-12 1985-10-29 Rca Corporation Method for growing monocrystalline silicon on a mask layer
IN157312B (it) * 1982-01-12 1986-03-01 Rca Corp
US4482422A (en) * 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
US4497683A (en) * 1982-05-03 1985-02-05 At&T Bell Laboratories Process for producing dielectrically isolated silicon devices
US4460416A (en) * 1982-12-15 1984-07-17 Burroughs Corporation Method for fabricating in-situ doped polysilicon employing overdamped gradually increasing gas flow rates with constant flow rate ratio
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
US4698316A (en) * 1985-01-23 1987-10-06 Rca Corporation Method of depositing uniformly thick selective epitaxial silicon
US4592792A (en) * 1985-01-23 1986-06-03 Rca Corporation Method for forming uniformly thick selective epitaxial silicon
JPH0639357B2 (ja) * 1986-09-08 1994-05-25 新技術開発事業団 元素半導体単結晶薄膜の成長方法
US4874464A (en) * 1988-03-14 1989-10-17 Epsilon Limited Partnership Process for epitaxial deposition of silicon
JPH05217921A (ja) * 1991-09-13 1993-08-27 Motorola Inc 材料膜のエピタキシアル成長を行うための温度制御された処理
EP0718873A3 (en) 1994-12-21 1998-04-15 MEMC Electronic Materials, Inc. Cleaning process for hydrophobic silicon wafers
JP3444327B2 (ja) * 1996-03-04 2003-09-08 信越半導体株式会社 シリコン単結晶薄膜の製造方法
US6703290B2 (en) 1999-07-14 2004-03-09 Seh America, Inc. Growth of epitaxial semiconductor material with improved crystallographic properties
US6190453B1 (en) 1999-07-14 2001-02-20 Seh America, Inc. Growth of epitaxial semiconductor material with improved crystallographic properties
US6489241B1 (en) * 1999-09-17 2002-12-03 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
DE19960823B4 (de) * 1999-12-16 2007-04-12 Siltronic Ag Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe und deren Verwendung
US6774040B2 (en) * 2002-09-12 2004-08-10 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
JP4266122B2 (ja) * 2002-11-18 2009-05-20 コバレントマテリアル株式会社 半導体基板の製造方法
US12359343B2 (en) 2019-08-09 2025-07-15 Blue Origin Manufacturing, LLC Wafer with regions of low oxygen concentration
AU2020328504A1 (en) 2019-08-09 2022-02-17 Leading Edge Equipment Technologies, Inc. Producing a ribbon or wafer with regions of low oxygen concentration
CN116525418B (zh) * 2023-06-09 2023-09-15 中电科先进材料技术创新有限公司 基于111晶向的硅外延片制备方法、硅外延片及半导体器件
CN119859846B (zh) * 2025-03-21 2025-06-24 中国电子科技集团公司第四十六研究所 一种半导体功率器件用超薄衬底沉积厚层硅外延片的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
US3512056A (en) * 1967-04-25 1970-05-12 Westinghouse Electric Corp Double epitaxial layer high power,high speed transistor
US3501336A (en) * 1967-12-11 1970-03-17 Texas Instruments Inc Method for etching single crystal silicon substrates and depositing silicon thereon
DE1900116C3 (de) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten

Also Published As

Publication number Publication date
AU8142375A (en) 1976-11-25
NL7506225A (nl) 1975-12-02
DE2523067B2 (de) 1978-12-14
DE2523067A1 (de) 1975-12-18
IN143139B (it) 1977-10-08
JPS546036B2 (it) 1979-03-23
FR2272732A1 (it) 1975-12-26
US3945864A (en) 1976-03-23
BE829378A (fr) 1975-09-15
GB1490665A (en) 1977-11-02
SE7506031L (sv) 1975-12-01
FR2272732B3 (it) 1978-12-01
JPS512681A (en) 1976-01-10

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