FR2272732B3 - - Google Patents

Info

Publication number
FR2272732B3
FR2272732B3 FR7515828A FR7515828A FR2272732B3 FR 2272732 B3 FR2272732 B3 FR 2272732B3 FR 7515828 A FR7515828 A FR 7515828A FR 7515828 A FR7515828 A FR 7515828A FR 2272732 B3 FR2272732 B3 FR 2272732B3
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7515828A
Other versions
FR2272732A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2272732A1 publication Critical patent/FR2272732A1/fr
Application granted granted Critical
Publication of FR2272732B3 publication Critical patent/FR2272732B3/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
FR7515828A 1974-05-28 1975-05-21 Expired FR2272732B3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/473,766 US3945864A (en) 1974-05-28 1974-05-28 Method of growing thick expitaxial layers of silicon

Publications (2)

Publication Number Publication Date
FR2272732A1 FR2272732A1 (fr) 1975-12-26
FR2272732B3 true FR2272732B3 (fr) 1978-12-01

Family

ID=23880890

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7515828A Expired FR2272732B3 (fr) 1974-05-28 1975-05-21

Country Status (10)

Country Link
US (1) US3945864A (fr)
JP (1) JPS512681A (fr)
BE (1) BE829378A (fr)
DE (1) DE2523067B2 (fr)
FR (1) FR2272732B3 (fr)
GB (1) GB1490665A (fr)
IN (1) IN143139B (fr)
IT (1) IT1037445B (fr)
NL (1) NL7506225A (fr)
SE (1) SE7506031L (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4950605A (fr) * 1972-09-22 1974-05-16
US4509162A (en) * 1980-10-28 1985-04-02 Quixote Corporation High density recording medium
IN157312B (fr) * 1982-01-12 1986-03-01 Rca Corp
US4549926A (en) * 1982-01-12 1985-10-29 Rca Corporation Method for growing monocrystalline silicon on a mask layer
US4482422A (en) * 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
US4497683A (en) * 1982-05-03 1985-02-05 At&T Bell Laboratories Process for producing dielectrically isolated silicon devices
US4460416A (en) * 1982-12-15 1984-07-17 Burroughs Corporation Method for fabricating in-situ doped polysilicon employing overdamped gradually increasing gas flow rates with constant flow rate ratio
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
US4592792A (en) * 1985-01-23 1986-06-03 Rca Corporation Method for forming uniformly thick selective epitaxial silicon
US4698316A (en) * 1985-01-23 1987-10-06 Rca Corporation Method of depositing uniformly thick selective epitaxial silicon
JPH0639357B2 (ja) * 1986-09-08 1994-05-25 新技術開発事業団 元素半導体単結晶薄膜の成長方法
US4874464A (en) * 1988-03-14 1989-10-17 Epsilon Limited Partnership Process for epitaxial deposition of silicon
JPH05217921A (ja) * 1991-09-13 1993-08-27 Motorola Inc 材料膜のエピタキシアル成長を行うための温度制御された処理
EP0718873A3 (fr) 1994-12-21 1998-04-15 MEMC Electronic Materials, Inc. Procédé de nettoyage de plaquettes de silicium hydrophobe
JP3444327B2 (ja) * 1996-03-04 2003-09-08 信越半導体株式会社 シリコン単結晶薄膜の製造方法
US6703290B2 (en) 1999-07-14 2004-03-09 Seh America, Inc. Growth of epitaxial semiconductor material with improved crystallographic properties
US6190453B1 (en) 1999-07-14 2001-02-20 Seh America, Inc. Growth of epitaxial semiconductor material with improved crystallographic properties
US6489241B1 (en) * 1999-09-17 2002-12-03 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
DE19960823B4 (de) * 1999-12-16 2007-04-12 Siltronic Ag Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe und deren Verwendung
US6774040B2 (en) * 2002-09-12 2004-08-10 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
JP4266122B2 (ja) * 2002-11-18 2009-05-20 コバレントマテリアル株式会社 半導体基板の製造方法
MX2022001458A (es) 2019-08-09 2022-06-08 Leading Edge Equipment Tech Inc Produccion de una cinta u oblea con regiones de baja concentracion de oxigeno.
CN116525418B (zh) * 2023-06-09 2023-09-15 中电科先进材料技术创新有限公司 基于111晶向的硅外延片制备方法、硅外延片及半导体器件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
US3512056A (en) * 1967-04-25 1970-05-12 Westinghouse Electric Corp Double epitaxial layer high power,high speed transistor
US3501336A (en) * 1967-12-11 1970-03-17 Texas Instruments Inc Method for etching single crystal silicon substrates and depositing silicon thereon
DE1900116C3 (de) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten

Also Published As

Publication number Publication date
NL7506225A (nl) 1975-12-02
JPS546036B2 (fr) 1979-03-23
JPS512681A (en) 1976-01-10
FR2272732A1 (fr) 1975-12-26
GB1490665A (en) 1977-11-02
US3945864A (en) 1976-03-23
AU8142375A (en) 1976-11-25
BE829378A (fr) 1975-09-15
SE7506031L (sv) 1975-12-01
IT1037445B (it) 1979-11-10
DE2523067A1 (de) 1975-12-18
IN143139B (fr) 1977-10-08
DE2523067B2 (de) 1978-12-14

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Legal Events

Date Code Title Description
ST Notification of lapse