IT1069886B - Procedimento per l accrescimento epitassiale di uno strato semiconduttore liscio - Google Patents

Procedimento per l accrescimento epitassiale di uno strato semiconduttore liscio

Info

Publication number
IT1069886B
IT1069886B IT69851/76A IT6985176A IT1069886B IT 1069886 B IT1069886 B IT 1069886B IT 69851/76 A IT69851/76 A IT 69851/76A IT 6985176 A IT6985176 A IT 6985176A IT 1069886 B IT1069886 B IT 1069886B
Authority
IT
Italy
Prior art keywords
procedure
epitaxial growth
semiconductive layer
smooth semiconductive
smooth
Prior art date
Application number
IT69851/76A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of IT1069886B publication Critical patent/IT1069886B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
IT69851/76A 1975-12-01 1976-11-29 Procedimento per l accrescimento epitassiale di uno strato semiconduttore liscio IT1069886B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US63656475A 1975-12-01 1975-12-01
US05/660,472 US4050964A (en) 1975-12-01 1976-02-23 Growing smooth epitaxial layers on misoriented substrates

Publications (1)

Publication Number Publication Date
IT1069886B true IT1069886B (it) 1985-03-25

Family

ID=27092638

Family Applications (1)

Application Number Title Priority Date Filing Date
IT69851/76A IT1069886B (it) 1975-12-01 1976-11-29 Procedimento per l accrescimento epitassiale di uno strato semiconduttore liscio

Country Status (6)

Country Link
US (1) US4050964A (it)
JP (1) JPS6054279B2 (it)
DE (1) DE2653532C2 (it)
FR (1) FR2333567A1 (it)
GB (1) GB1561177A (it)
IT (1) IT1069886B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2641347C2 (de) * 1976-09-14 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von epitaxialen Schichten auf einkristallinen Substraten
DE2817797A1 (de) * 1978-04-22 1979-10-25 Massachusetts Inst Technology Substrat mit filmartiger oberschicht und verfahren zur verbesserung der epitaxie bei der filmbildung auf einem festen substrat
NL7905544A (nl) * 1979-03-01 1980-09-03 Philips Nv Werkwijze voor het vormen van een monokristallijne laag van een oxydisch materiaal met spinel of granaat- structuur op een substraat.
DE2910723A1 (de) * 1979-03-19 1980-09-25 Siemens Ag Verfahren zum herstellen von epitaktischen halbleitermaterialschichten auf einkristallinen substraten nach der fluessigphasen-schiebe-epitaxie
US4540450A (en) * 1982-06-02 1985-09-10 The United States Of America As Represented By The Secretary Of The Air Force InP:Te Protective layer process for reducing substrate dissociation
US4523318A (en) * 1982-10-29 1985-06-11 Rca Corporation Semiconductor laser having high manufacturing yield
US4522661A (en) * 1983-06-24 1985-06-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Low defect, high purity crystalline layers grown by selective deposition
US4591889A (en) * 1984-09-14 1986-05-27 At&T Bell Laboratories Superlattice geometry and devices
US5279701A (en) * 1988-05-11 1994-01-18 Sharp Kabushiki Kaisha Method for the growth of silicon carbide single crystals
US5230768A (en) * 1990-03-26 1993-07-27 Sharp Kabushiki Kaisha Method for the production of SiC single crystals by using a specific substrate crystal orientation
JPH03278542A (ja) * 1990-03-28 1991-12-10 Hitachi Ltd 半導体装置
US6229197B1 (en) * 1993-04-30 2001-05-08 Texas Instruments Incorporated Epitaxial overgrowth method and devices
US5762706A (en) * 1993-11-09 1998-06-09 Fujitsu Limited Method of forming compound semiconductor device
US6188090B1 (en) * 1995-08-31 2001-02-13 Fujitsu Limited Semiconductor device having a heteroepitaxial substrate
JP2914246B2 (ja) * 1995-10-12 1999-06-28 昭和電工株式会社 エピタキシャルウエハおよび半導体発光素子

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325314A (en) * 1961-10-27 1967-06-13 Siemens Ag Semi-conductor product and method for making same
NL284785A (it) * 1961-10-27
NL295293A (it) * 1962-07-13
DE1544233A1 (de) * 1963-09-26 1970-10-22 Nippon Electric Co Epitaxial-Aufwachsverfahren fuer Halbleiterkristalle
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3476592A (en) * 1966-01-14 1969-11-04 Ibm Method for producing improved epitaxial films
US3471324A (en) * 1966-12-23 1969-10-07 Texas Instruments Inc Epitaxial gallium arsenide
SE338761B (it) * 1967-10-20 1971-09-20 Philips Nv
NL171309C (nl) * 1970-03-02 1983-03-01 Hitachi Ltd Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium.
JPS4847272A (it) * 1971-10-18 1973-07-05
JPS537397B2 (it) * 1971-12-28 1978-03-17
JPS5032901B2 (it) * 1972-04-28 1975-10-25
JPS5438599B2 (it) * 1973-02-15 1979-11-21
US3899371A (en) * 1973-06-25 1975-08-12 Rca Corp Method of forming PN junctions by liquid phase epitaxy
JPS5134666A (en) * 1974-09-19 1976-03-24 Tokyo Shibaura Electric Co 335 zokukagobutsuhandotai no kisoseichohoho

Also Published As

Publication number Publication date
DE2653532C2 (de) 1985-11-07
US4050964A (en) 1977-09-27
GB1561177A (en) 1980-02-13
DE2653532A1 (de) 1977-06-02
JPS6054279B2 (ja) 1985-11-29
FR2333567B1 (it) 1981-09-04
FR2333567A1 (fr) 1977-07-01
JPS5268079A (en) 1977-06-06

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