IT1100682B - Metodo per la deposizione epitassiale di parecchi strati - Google Patents

Metodo per la deposizione epitassiale di parecchi strati

Info

Publication number
IT1100682B
IT1100682B IT29479/78A IT2947978A IT1100682B IT 1100682 B IT1100682 B IT 1100682B IT 29479/78 A IT29479/78 A IT 29479/78A IT 2947978 A IT2947978 A IT 2947978A IT 1100682 B IT1100682 B IT 1100682B
Authority
IT
Italy
Prior art keywords
several layers
epitaxial deposition
epitaxial
deposition
layers
Prior art date
Application number
IT29479/78A
Other languages
English (en)
Other versions
IT7829479A0 (it
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT7829479A0 publication Critical patent/IT7829479A0/it
Application granted granted Critical
Publication of IT1100682B publication Critical patent/IT1100682B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
IT29479/78A 1977-11-09 1978-11-06 Metodo per la deposizione epitassiale di parecchi strati IT1100682B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7712315A NL7712315A (nl) 1977-11-09 1977-11-09 Werkwijze voor het epitaxiaal neerslaan van verscheidene lagen.

Publications (2)

Publication Number Publication Date
IT7829479A0 IT7829479A0 (it) 1978-11-06
IT1100682B true IT1100682B (it) 1985-09-28

Family

ID=19829502

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29479/78A IT1100682B (it) 1977-11-09 1978-11-06 Metodo per la deposizione epitassiale di parecchi strati

Country Status (7)

Country Link
US (1) US4218269A (it)
EP (1) EP0002080B1 (it)
JP (1) JPS5481069A (it)
CA (1) CA1123967A (it)
DE (1) DE2860628D1 (it)
IT (1) IT1100682B (it)
NL (1) NL7712315A (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2481325A1 (fr) * 1980-04-23 1981-10-30 Radiotechnique Compelec Nacelle utilisable pour des depots epitaxiques multicouches en phase liquide et procede de depot mettant en jeu ladite nacelle
JPS5747798A (en) * 1980-09-01 1982-03-18 Sanyo Electric Co Ltd Liquid phase epitaxial growing method
US4547230A (en) * 1984-07-30 1985-10-15 The United States Of America As Represented By The Secretary Of The Air Force LPE Semiconductor material transfer method
CH669401A5 (it) * 1988-03-02 1989-03-15 Loepfe Ag Geb
US5284781A (en) * 1993-04-30 1994-02-08 Motorola, Inc. Method of forming light emitting diode by LPE
SE9800035D0 (sv) * 1998-01-09 1998-01-09 Lionel Vayssieres Process for producing thin metal oxide films on substrates

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3741825A (en) * 1971-07-08 1973-06-26 Rca Corp Method of depositing an epitaxial semiconductor layer from the liquidphase
US3767481A (en) * 1972-04-07 1973-10-23 Rca Corp Method for epitaxially growing layers of a semiconductor material from the liquid phase
JPS5248791B2 (it) * 1972-07-22 1977-12-12
US3899371A (en) * 1973-06-25 1975-08-12 Rca Corp Method of forming PN junctions by liquid phase epitaxy
US3963536A (en) * 1974-11-18 1976-06-15 Rca Corporation Method of making electroluminescent semiconductor devices
US4088514A (en) * 1975-04-17 1978-05-09 Matsushita Electric Industrial Co., Ltd. Method for epitaxial growth of thin semiconductor layer from solution
JPS51143581A (en) * 1975-06-04 1976-12-09 Fujitsu Ltd Process for liquid phase growing
NL7609607A (nl) * 1976-08-30 1978-03-02 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
DE2730358C3 (de) * 1977-07-05 1982-03-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zum aufeinanderfolgenden Abscheiden einkristalliner Schichten auf einem Substrat nach der Flüssigphasen-Schiebeepitaxie

Also Published As

Publication number Publication date
CA1123967A (en) 1982-05-18
JPS5481069A (en) 1979-06-28
NL7712315A (nl) 1979-05-11
EP0002080B1 (en) 1981-04-15
DE2860628D1 (en) 1981-05-07
EP0002080A1 (en) 1979-05-30
JPS56940B2 (it) 1981-01-10
US4218269A (en) 1980-08-19
IT7829479A0 (it) 1978-11-06

Similar Documents

Publication Publication Date Title
IT7824502A0 (it) Metodo per la deposizione di uno strato di siliciuro metallico.
IT1102018B (it) Procedimento per la produzione di trimetilol-alcani
IT1096742B (it) Metodo per la produzione di anticorpi
IT1037445B (it) Metodo per l accrescimento di strati epitassiali di silicio
IT1109011B (it) Procedimento per la produzione di vincadifformina
IT1106615B (it) Procedimento per la produzione di solfobetaine
IT1104185B (it) Procedimento per la migliorata produzione di 2-etilesanolo
IT1112060B (it) Procedimento per la produzione di composti silicio-azotati
IT1105171B (it) Procedimento per la produzione di nitrosobenzolo
IT1100590B (it) Procedimento per la produzione di rifamicine
IT1100682B (it) Metodo per la deposizione epitassiale di parecchi strati
IT1143576B (it) Procedimento per la produzione di cianura benzoilico
IT1107474B (it) Procedimento per la produzione di carburo di silicio
IT1102801B (it) Catalizzatori per la formazione di carbodiimmidi
IT1086689B (it) Procedimento per la produzione di clorometilsilani
IT1143577B (it) Procedimento per la produzione di cianura benzoilico
IT1157730B (it) Procedimento per la produzione di alfa-idrossimetilen-nitrili
IT1195256B (it) Procedimento continuo per la produzione di diperossiacidi
IT1091564B (it) Metodo per la preparazione di 3-deossiantociandine
IT1106884B (it) Procedimento per la produzione di aldeidi
IT1076785B (it) Procedimento per la produzione di puo2
IT1099446B (it) Procedimento per la produzione di tiolcarbamati
IT7851895A0 (it) Metodo perfezionato per la produzione di composti poliidrici
IT1090371B (it) Procedimento per la produzione di aloacilammidi
IT1089301B (it) Procedimento per la produzione di benzantrone