JPS5481069A - Method of depositing epitaxial of plural layers - Google Patents

Method of depositing epitaxial of plural layers

Info

Publication number
JPS5481069A
JPS5481069A JP13663178A JP13663178A JPS5481069A JP S5481069 A JPS5481069 A JP S5481069A JP 13663178 A JP13663178 A JP 13663178A JP 13663178 A JP13663178 A JP 13663178A JP S5481069 A JPS5481069 A JP S5481069A
Authority
JP
Japan
Prior art keywords
plural layers
depositing epitaxial
epitaxial
depositing
plural
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13663178A
Other languages
English (en)
Other versions
JPS56940B2 (ja
Inventor
Herarudasu Jiyakobus Teodorasu
Yohemu Resuuin Uiremu
Yohanesu Adorianusu T Petorusu
Niiman Uiremu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5481069A publication Critical patent/JPS5481069A/ja
Publication of JPS56940B2 publication Critical patent/JPS56940B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP13663178A 1977-11-09 1978-11-06 Method of depositing epitaxial of plural layers Granted JPS5481069A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7712315A NL7712315A (nl) 1977-11-09 1977-11-09 Werkwijze voor het epitaxiaal neerslaan van verscheidene lagen.

Publications (2)

Publication Number Publication Date
JPS5481069A true JPS5481069A (en) 1979-06-28
JPS56940B2 JPS56940B2 (ja) 1981-01-10

Family

ID=19829502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13663178A Granted JPS5481069A (en) 1977-11-09 1978-11-06 Method of depositing epitaxial of plural layers

Country Status (7)

Country Link
US (1) US4218269A (ja)
EP (1) EP0002080B1 (ja)
JP (1) JPS5481069A (ja)
CA (1) CA1123967A (ja)
DE (1) DE2860628D1 (ja)
IT (1) IT1100682B (ja)
NL (1) NL7712315A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5747798A (en) * 1980-09-01 1982-03-18 Sanyo Electric Co Ltd Liquid phase epitaxial growing method

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2481325A1 (fr) * 1980-04-23 1981-10-30 Radiotechnique Compelec Nacelle utilisable pour des depots epitaxiques multicouches en phase liquide et procede de depot mettant en jeu ladite nacelle
US4547230A (en) * 1984-07-30 1985-10-15 The United States Of America As Represented By The Secretary Of The Air Force LPE Semiconductor material transfer method
CH669401A5 (ja) * 1988-03-02 1989-03-15 Loepfe Ag Geb
US5284781A (en) * 1993-04-30 1994-02-08 Motorola, Inc. Method of forming light emitting diode by LPE
SE9800035D0 (sv) * 1998-01-09 1998-01-09 Lionel Vayssieres Process for producing thin metal oxide films on substrates

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3741825A (en) * 1971-07-08 1973-06-26 Rca Corp Method of depositing an epitaxial semiconductor layer from the liquidphase
JPS4932581A (ja) * 1972-07-22 1974-03-25
JPS51143581A (en) * 1975-06-04 1976-12-09 Fujitsu Ltd Process for liquid phase growing

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767481A (en) * 1972-04-07 1973-10-23 Rca Corp Method for epitaxially growing layers of a semiconductor material from the liquid phase
US3899371A (en) * 1973-06-25 1975-08-12 Rca Corp Method of forming PN junctions by liquid phase epitaxy
US3963536A (en) * 1974-11-18 1976-06-15 Rca Corporation Method of making electroluminescent semiconductor devices
US4088514A (en) * 1975-04-17 1978-05-09 Matsushita Electric Industrial Co., Ltd. Method for epitaxial growth of thin semiconductor layer from solution
NL7609607A (nl) * 1976-08-30 1978-03-02 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
DE2730358C3 (de) * 1977-07-05 1982-03-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zum aufeinanderfolgenden Abscheiden einkristalliner Schichten auf einem Substrat nach der Flüssigphasen-Schiebeepitaxie

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3741825A (en) * 1971-07-08 1973-06-26 Rca Corp Method of depositing an epitaxial semiconductor layer from the liquidphase
JPS4932581A (ja) * 1972-07-22 1974-03-25
JPS51143581A (en) * 1975-06-04 1976-12-09 Fujitsu Ltd Process for liquid phase growing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5747798A (en) * 1980-09-01 1982-03-18 Sanyo Electric Co Ltd Liquid phase epitaxial growing method

Also Published As

Publication number Publication date
CA1123967A (en) 1982-05-18
NL7712315A (nl) 1979-05-11
DE2860628D1 (en) 1981-05-07
EP0002080B1 (en) 1981-04-15
EP0002080A1 (en) 1979-05-30
JPS56940B2 (ja) 1981-01-10
IT7829479A0 (it) 1978-11-06
IT1100682B (it) 1985-09-28
US4218269A (en) 1980-08-19

Similar Documents

Publication Publication Date Title
JPS52113903A (en) Method of dimerization of alphaaolefin
JPS5441300A (en) Method of forming sic coat
JPS5395907A (en) Method of epoxydizing olefin
JPS52100386A (en) Aciddtreating method of solid carriers
JPS5459294A (en) Improved method for producing heteroomacrocyclic compound
JPS53132506A (en) Deenitroso method of nnnitroso compound
JPS5384906A (en) Method of hydraing olefin
JPS549300A (en) Method of preparing hydroxynormorphin compound
JPS5418690A (en) Method of metallizing multiple layers of mos
JPS5481069A (en) Method of depositing epitaxial of plural layers
JPS5368707A (en) Method of epoxydizing olefin
JPS5497366A (en) Method of forming metalltoosemiconductor junction
JPS5395901A (en) Method of epoxydizing olefin
JPS53141225A (en) Counterrcurrent dinitrolizing method of basaline precursor
JPS53149764A (en) Method of producing tape carrier tape
JPS5336183A (en) Method of forming epitaxial layer
JPS5415984A (en) Method of forming airrinntire
JPS54141560A (en) Method of forming epitaxial layer
JPS53103985A (en) Growing film forming method
JPS5414485A (en) Method of forming airrinntire
JPS52120269A (en) Method of forming
DE3061178D1 (en) Method of depositing carbon layers
JPS5426854A (en) Method of forming crystalline olefin resin case
JPS5335780A (en) Method of producing compound
JPS52128257A (en) Method of producing laver