FR2329344A1 - Procede de croissance de monocristaux semiconducteurs - Google Patents

Procede de croissance de monocristaux semiconducteurs

Info

Publication number
FR2329344A1
FR2329344A1 FR7632927A FR7632927A FR2329344A1 FR 2329344 A1 FR2329344 A1 FR 2329344A1 FR 7632927 A FR7632927 A FR 7632927A FR 7632927 A FR7632927 A FR 7632927A FR 2329344 A1 FR2329344 A1 FR 2329344A1
Authority
FR
France
Prior art keywords
single crystal
crystal growth
growth process
semiconductor single
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7632927A
Other languages
English (en)
French (fr)
Other versions
FR2329344B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2329344A1 publication Critical patent/FR2329344A1/fr
Application granted granted Critical
Publication of FR2329344B1 publication Critical patent/FR2329344B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Polyethers (AREA)
FR7632927A 1975-10-30 1976-10-29 Procede de croissance de monocristaux semiconducteurs Granted FR2329344A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/627,319 US4083748A (en) 1975-10-30 1975-10-30 Method of forming and growing a single crystal of a semiconductor compound

Publications (2)

Publication Number Publication Date
FR2329344A1 true FR2329344A1 (fr) 1977-05-27
FR2329344B1 FR2329344B1 (enExample) 1981-10-02

Family

ID=24514176

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7632927A Granted FR2329344A1 (fr) 1975-10-30 1976-10-29 Procede de croissance de monocristaux semiconducteurs

Country Status (8)

Country Link
US (1) US4083748A (enExample)
JP (2) JPS5268297A (enExample)
CA (1) CA1080588A (enExample)
DE (1) DE2648275A1 (enExample)
FR (1) FR2329344A1 (enExample)
GB (1) GB1557287A (enExample)
IT (1) IT1075860B (enExample)
NL (1) NL7612006A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2416729A1 (fr) * 1978-02-09 1979-09-07 Radiotechnique Compelec Perfectionnement au procede de fabrication d'un monocristal de compose iii-v''

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5418816A (en) * 1977-07-14 1979-02-13 Tokyo Shibaura Electric Co Sintered members having good corrosionn resistance to gallium phosphide and gallium arsenide
US4289571A (en) * 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US4299650A (en) * 1979-10-12 1981-11-10 Bell Telephone Laboratories, Incorporated Minimization of strain in single crystals
US4404172A (en) * 1981-01-05 1983-09-13 Western Electric Company, Inc. Method and apparatus for forming and growing a single crystal of a semiconductor compound
DE3129449A1 (de) * 1981-07-25 1983-02-10 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt "verfahren zur regelung des partialdruckes mindestens eines stoffes oder stoffgemisches"
US4652332A (en) * 1984-11-29 1987-03-24 The United States Of America As Represented By The United States Department Of Energy Method of synthesizing and growing copper-indium-diselenide (CuInSe2) crystals
US5312506A (en) * 1987-06-15 1994-05-17 Mitsui Mining Company, Limited Method for growing single crystals from melt
US5116456A (en) * 1988-04-18 1992-05-26 Solon Technologies, Inc. Apparatus and method for growth of large single crystals in plate/slab form
US5057287A (en) * 1988-11-01 1991-10-15 Sfa, Inc. Liquid encapsulated zone melting crystal growth method and apparatus
US5007980A (en) * 1988-11-01 1991-04-16 Sfa, Inc. Liquid encapsulated zone melting crystal growth method and apparatus
JPH02160687A (ja) * 1988-12-14 1990-06-20 Mitsui Mining Co Ltd 単結晶製造方法
US4999082A (en) * 1989-09-14 1991-03-12 Akzo America Inc. Process for producing monocrystalline group II-IV or group III-V compounds and products thereof
US5169486A (en) * 1991-03-06 1992-12-08 Bestal Corporation Crystal growth apparatus and process
JPH05139886A (ja) * 1991-11-21 1993-06-08 Toshiba Corp 砒素化合物単結晶の製造方法
US5685907A (en) * 1994-06-02 1997-11-11 Kabushiki Kaisha Kobe Seiko Sho Apparatus for preparing compound single crystals
JP3201305B2 (ja) 1996-04-26 2001-08-20 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体結晶の製造方法
JP3596337B2 (ja) 1998-03-25 2004-12-02 住友電気工業株式会社 化合物半導体結晶の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3305313A (en) * 1963-12-18 1967-02-21 Philco Ford Corp Method of producing gallium phosphide in crystalline form
SE338761B (enExample) * 1967-10-20 1971-09-20 Philips Nv
US3520810A (en) * 1968-01-15 1970-07-21 Ibm Manufacture of single crystal semiconductors
FR1568042A (enExample) * 1968-01-18 1969-05-23
JPS4820106B1 (enExample) * 1968-03-08 1973-06-19
FR1569785A (enExample) * 1968-03-22 1969-06-06
GB1352449A (en) * 1970-07-28 1974-05-08 Sumitomo Electric Industries Semiconductor production
CA956867A (en) * 1970-12-04 1974-10-29 Albert G. Fischer Method and apparatus for forming crystalline bodies of a semiconductor material
FR2175595B1 (enExample) * 1972-03-15 1974-09-13 Radiotechnique Compelec
JPS5148152B2 (enExample) * 1972-05-11 1976-12-18
US3944393A (en) * 1973-11-21 1976-03-16 Monsanto Company Apparatus for horizontal production of single crystal structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2416729A1 (fr) * 1978-02-09 1979-09-07 Radiotechnique Compelec Perfectionnement au procede de fabrication d'un monocristal de compose iii-v''

Also Published As

Publication number Publication date
US4083748A (en) 1978-04-11
CA1080588A (en) 1980-07-01
FR2329344B1 (enExample) 1981-10-02
NL7612006A (nl) 1977-05-03
DE2648275A1 (de) 1977-05-05
JPS5268297A (en) 1977-06-06
GB1557287A (en) 1979-12-05
JPS6046075B2 (ja) 1985-10-14
JPS54163672A (en) 1979-12-26
IT1075860B (it) 1985-04-22

Similar Documents

Publication Publication Date Title
FR2301555A1 (fr) Procede de r
FR2298596A1 (fr) Procede de fa
JPS5258080A (en) Continuous semiconductor crystal growth apparatus
FR2301288A1 (fr) Procede p
FR2300291A1 (fr) Procede de re
FR2300048A1 (fr) Procede
FR2323435A1 (fr) Procede de preparation de dis
FR2329344A1 (fr) Procede de croissance de monocristaux semiconducteurs
FR2337120A1 (fr) Procede d
FR2299074A1 (fr) Procede
FR2341533A1 (fr) Procede de frittage de ceramiques
FR2319609A1 (fr) Procede de preparation de resorcines
BE844064A (fr) Procede de superfinition des surfaces de semi-conducteurs
BE839550A (fr) Procede integre
RO73006A (ro) Procedeu de preparare a unor tioderivati
BE852668A (fr) Procede de preparation de 3-halomethylcephemes
FR2311390A1 (fr) Procede de traiteme
FR2314167A1 (fr) Procede de preparation de para-alkylphenols
FR2297921A1 (fr) Procede de r
FR2311010A1 (fr) Procede de preparation de 2-aryl-2h-benzotriazoles
FR2300092A1 (fr) Procede
BE837906A (fr) Procede de preparation de n-(alpha-alcoxyethyl)-carboxamides
FR2301019A1 (fr) Procede de radionavigation
RO71949A (ro) Procedeu de cultivare a unor bazidiomicete
BE845696A (fr) Procede de dopage de barreaux semi-conducteurs

Legal Events

Date Code Title Description
ST Notification of lapse