DE2426529C3 - Planardiffusionsverfahren zum Herstellen eines Transistors in einer monolithisch integrierten I2 L - Schaltung - Google Patents
Planardiffusionsverfahren zum Herstellen eines Transistors in einer monolithisch integrierten I2 L - SchaltungInfo
- Publication number
- DE2426529C3 DE2426529C3 DE2426529A DE2426529A DE2426529C3 DE 2426529 C3 DE2426529 C3 DE 2426529C3 DE 2426529 A DE2426529 A DE 2426529A DE 2426529 A DE2426529 A DE 2426529A DE 2426529 C3 DE2426529 C3 DE 2426529C3
- Authority
- DE
- Germany
- Prior art keywords
- zone
- zones
- emitter
- epitaxial layer
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 2
- 238000013461 design Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000035558 fertility Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2426529A DE2426529C3 (de) | 1974-05-31 | 1974-05-31 | Planardiffusionsverfahren zum Herstellen eines Transistors in einer monolithisch integrierten I2 L - Schaltung |
| GB22127/75A GB1482298A (en) | 1974-05-31 | 1975-05-22 | Monolithically integrated circuit |
| IT23742/75A IT1038519B (it) | 1974-05-31 | 1975-05-27 | Diffusione planare per la faberi cazione di un transistore |
| FR7516605A FR2273373B3 (enrdf_load_stackoverflow) | 1974-05-31 | 1975-05-28 | |
| NL7506334A NL7506334A (nl) | 1974-05-31 | 1975-05-29 | Werkwijze voor planardiffusie. |
| JP50065986A JPS515974A (enrdf_load_stackoverflow) | 1974-05-31 | 1975-05-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2426529A DE2426529C3 (de) | 1974-05-31 | 1974-05-31 | Planardiffusionsverfahren zum Herstellen eines Transistors in einer monolithisch integrierten I2 L - Schaltung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2426529A1 DE2426529A1 (de) | 1975-12-11 |
| DE2426529B2 DE2426529B2 (de) | 1979-12-20 |
| DE2426529C3 true DE2426529C3 (de) | 1980-08-28 |
Family
ID=5917044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2426529A Expired DE2426529C3 (de) | 1974-05-31 | 1974-05-31 | Planardiffusionsverfahren zum Herstellen eines Transistors in einer monolithisch integrierten I2 L - Schaltung |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS515974A (enrdf_load_stackoverflow) |
| DE (1) | DE2426529C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2273373B3 (enrdf_load_stackoverflow) |
| GB (1) | GB1482298A (enrdf_load_stackoverflow) |
| IT (1) | IT1038519B (enrdf_load_stackoverflow) |
| NL (1) | NL7506334A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5541533B2 (enrdf_load_stackoverflow) * | 1974-12-04 | 1980-10-24 | ||
| JPS52141587A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Semiconductor device and its process |
| DE3004681A1 (de) * | 1980-02-08 | 1981-08-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Integrierte schaltungsanordnung mit einer diode |
| WO2008051503A2 (en) | 2006-10-19 | 2008-05-02 | Amberwave Systems Corporation | Light-emitter-based devices with lattice-mismatched semiconductor structures |
| WO2008124154A2 (en) | 2007-04-09 | 2008-10-16 | Amberwave Systems Corporation | Photovoltaics on silicon |
| US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
-
1974
- 1974-05-31 DE DE2426529A patent/DE2426529C3/de not_active Expired
-
1975
- 1975-05-22 GB GB22127/75A patent/GB1482298A/en not_active Expired
- 1975-05-27 IT IT23742/75A patent/IT1038519B/it active
- 1975-05-28 FR FR7516605A patent/FR2273373B3/fr not_active Expired
- 1975-05-29 NL NL7506334A patent/NL7506334A/xx unknown
- 1975-05-31 JP JP50065986A patent/JPS515974A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2273373B3 (enrdf_load_stackoverflow) | 1978-12-29 |
| DE2426529B2 (de) | 1979-12-20 |
| NL7506334A (nl) | 1975-12-02 |
| JPS515974A (enrdf_load_stackoverflow) | 1976-01-19 |
| IT1038519B (it) | 1979-11-30 |
| FR2273373A1 (enrdf_load_stackoverflow) | 1975-12-26 |
| GB1482298A (en) | 1977-08-10 |
| DE2426529A1 (de) | 1975-12-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |