IT1038519B - Diffusione planare per la faberi cazione di un transistore - Google Patents

Diffusione planare per la faberi cazione di un transistore

Info

Publication number
IT1038519B
IT1038519B IT23742/75A IT2374275A IT1038519B IT 1038519 B IT1038519 B IT 1038519B IT 23742/75 A IT23742/75 A IT 23742/75A IT 2374275 A IT2374275 A IT 2374275A IT 1038519 B IT1038519 B IT 1038519B
Authority
IT
Italy
Prior art keywords
caation
faberi
transistor
planar diffusion
diffusion
Prior art date
Application number
IT23742/75A
Other languages
English (en)
Italian (it)
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Application granted granted Critical
Publication of IT1038519B publication Critical patent/IT1038519B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63Combinations of vertical and lateral BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0112Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0116Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
IT23742/75A 1974-05-31 1975-05-27 Diffusione planare per la faberi cazione di un transistore IT1038519B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2426529A DE2426529C3 (de) 1974-05-31 1974-05-31 Planardiffusionsverfahren zum Herstellen eines Transistors in einer monolithisch integrierten I2 L - Schaltung

Publications (1)

Publication Number Publication Date
IT1038519B true IT1038519B (it) 1979-11-30

Family

ID=5917044

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23742/75A IT1038519B (it) 1974-05-31 1975-05-27 Diffusione planare per la faberi cazione di un transistore

Country Status (6)

Country Link
JP (1) JPS515974A (enrdf_load_stackoverflow)
DE (1) DE2426529C3 (enrdf_load_stackoverflow)
FR (1) FR2273373B3 (enrdf_load_stackoverflow)
GB (1) GB1482298A (enrdf_load_stackoverflow)
IT (1) IT1038519B (enrdf_load_stackoverflow)
NL (1) NL7506334A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541533B2 (enrdf_load_stackoverflow) * 1974-12-04 1980-10-24
JPS52141587A (en) * 1976-05-20 1977-11-25 Matsushita Electric Ind Co Ltd Semiconductor device and its process
DE3004681A1 (de) * 1980-02-08 1981-08-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Integrierte schaltungsanordnung mit einer diode
US8502263B2 (en) 2006-10-19 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitter-based devices with lattice-mismatched semiconductor structures
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material

Also Published As

Publication number Publication date
DE2426529A1 (de) 1975-12-11
FR2273373B3 (enrdf_load_stackoverflow) 1978-12-29
FR2273373A1 (enrdf_load_stackoverflow) 1975-12-26
NL7506334A (nl) 1975-12-02
GB1482298A (en) 1977-08-10
JPS515974A (enrdf_load_stackoverflow) 1976-01-19
DE2426529B2 (de) 1979-12-20
DE2426529C3 (de) 1980-08-28

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