JPS515974A - - Google Patents

Info

Publication number
JPS515974A
JPS515974A JP50065986A JP6598675A JPS515974A JP S515974 A JPS515974 A JP S515974A JP 50065986 A JP50065986 A JP 50065986A JP 6598675 A JP6598675 A JP 6598675A JP S515974 A JPS515974 A JP S515974A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50065986A
Other languages
Japanese (ja)
Inventor
Heruman Hansu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of JPS515974A publication Critical patent/JPS515974A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63Combinations of vertical and lateral BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0112Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0116Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP50065986A 1974-05-31 1975-05-31 Pending JPS515974A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2426529A DE2426529C3 (de) 1974-05-31 1974-05-31 Planardiffusionsverfahren zum Herstellen eines Transistors in einer monolithisch integrierten I2 L - Schaltung

Publications (1)

Publication Number Publication Date
JPS515974A true JPS515974A (enrdf_load_stackoverflow) 1976-01-19

Family

ID=5917044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50065986A Pending JPS515974A (enrdf_load_stackoverflow) 1974-05-31 1975-05-31

Country Status (6)

Country Link
JP (1) JPS515974A (enrdf_load_stackoverflow)
DE (1) DE2426529C3 (enrdf_load_stackoverflow)
FR (1) FR2273373B3 (enrdf_load_stackoverflow)
GB (1) GB1482298A (enrdf_load_stackoverflow)
IT (1) IT1038519B (enrdf_load_stackoverflow)
NL (1) NL7506334A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5165577A (enrdf_load_stackoverflow) * 1974-12-04 1976-06-07 Hitachi Ltd
JPS52141587A (en) * 1976-05-20 1977-11-25 Matsushita Electric Ind Co Ltd Semiconductor device and its process
US10468551B2 (en) 2006-10-19 2019-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitter-based devices with lattice-mismatched semiconductor structures
US10680126B2 (en) 2007-04-09 2020-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US10961639B2 (en) 2008-06-03 2021-03-30 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxial growth of crystalline material

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3004681A1 (de) * 1980-02-08 1981-08-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Integrierte schaltungsanordnung mit einer diode

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5165577A (enrdf_load_stackoverflow) * 1974-12-04 1976-06-07 Hitachi Ltd
JPS52141587A (en) * 1976-05-20 1977-11-25 Matsushita Electric Ind Co Ltd Semiconductor device and its process
US10468551B2 (en) 2006-10-19 2019-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitter-based devices with lattice-mismatched semiconductor structures
US10680126B2 (en) 2007-04-09 2020-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US10961639B2 (en) 2008-06-03 2021-03-30 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxial growth of crystalline material

Also Published As

Publication number Publication date
DE2426529A1 (de) 1975-12-11
FR2273373B3 (enrdf_load_stackoverflow) 1978-12-29
FR2273373A1 (enrdf_load_stackoverflow) 1975-12-26
IT1038519B (it) 1979-11-30
NL7506334A (nl) 1975-12-02
GB1482298A (en) 1977-08-10
DE2426529B2 (de) 1979-12-20
DE2426529C3 (de) 1980-08-28

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