NL7506334A - Werkwijze voor planardiffusie. - Google Patents

Werkwijze voor planardiffusie.

Info

Publication number
NL7506334A
NL7506334A NL7506334A NL7506334A NL7506334A NL 7506334 A NL7506334 A NL 7506334A NL 7506334 A NL7506334 A NL 7506334A NL 7506334 A NL7506334 A NL 7506334A NL 7506334 A NL7506334 A NL 7506334A
Authority
NL
Netherlands
Prior art keywords
procedure
planar diffusion
diffusion
planar
Prior art date
Application number
NL7506334A
Other languages
English (en)
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of NL7506334A publication Critical patent/NL7506334A/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821Combination of lateral and vertical transistors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222Bipolar technology
    • H01L21/8226Bipolar technology comprising merged transistor logic or integrated injection logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
NL7506334A 1974-05-31 1975-05-29 Werkwijze voor planardiffusie. NL7506334A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742426529 DE2426529C3 (de) 1974-05-31 1974-05-31 Planardiffusionsverfahren zum Herstellen eines Transistors in einer monolithisch integrierten I2 L - Schaltung

Publications (1)

Publication Number Publication Date
NL7506334A true NL7506334A (nl) 1975-12-02

Family

ID=5917044

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7506334A NL7506334A (nl) 1974-05-31 1975-05-29 Werkwijze voor planardiffusie.

Country Status (6)

Country Link
JP (1) JPS515974A (nl)
DE (1) DE2426529C3 (nl)
FR (1) FR2273373B3 (nl)
GB (1) GB1482298A (nl)
IT (1) IT1038519B (nl)
NL (1) NL7506334A (nl)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541533B2 (nl) * 1974-12-04 1980-10-24
JPS52141587A (en) * 1976-05-20 1977-11-25 Matsushita Electric Ind Co Ltd Semiconductor device and its process
DE3004681A1 (de) * 1980-02-08 1981-08-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Integrierte schaltungsanordnung mit einer diode
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material

Also Published As

Publication number Publication date
DE2426529A1 (de) 1975-12-11
DE2426529C3 (de) 1980-08-28
GB1482298A (en) 1977-08-10
IT1038519B (it) 1979-11-30
JPS515974A (nl) 1976-01-19
FR2273373B3 (nl) 1978-12-29
FR2273373A1 (nl) 1975-12-26
DE2426529B2 (de) 1979-12-20

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