DE2048201B2 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE2048201B2
DE2048201B2 DE19702048201 DE2048201A DE2048201B2 DE 2048201 B2 DE2048201 B2 DE 2048201B2 DE 19702048201 DE19702048201 DE 19702048201 DE 2048201 A DE2048201 A DE 2048201A DE 2048201 B2 DE2048201 B2 DE 2048201B2
Authority
DE
Germany
Prior art keywords
film
substrate
silicon dioxide
phosphorus
arsenic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19702048201
Other languages
German (de)
English (en)
Other versions
DE2048201A1 (de
Inventor
Masakatsu; Yonezawa Toshio; Kato Taketoshi; Yokohama; Watanabe Masaharu Kawasaki; Akatsuka Minoru Yokohama; Nakamura (Japan)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP45025373A external-priority patent/JPS4926474B1/ja
Priority claimed from JP45054335A external-priority patent/JPS4926750B1/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of DE2048201A1 publication Critical patent/DE2048201A1/de
Publication of DE2048201B2 publication Critical patent/DE2048201B2/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
DE19702048201 1970-03-27 1970-09-30 Halbleiterbauelement Ceased DE2048201B2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP45025373A JPS4926474B1 (cg-RX-API-DMAC7.html) 1970-03-27 1970-03-27
JP45054335A JPS4926750B1 (cg-RX-API-DMAC7.html) 1970-06-24 1970-06-24

Publications (2)

Publication Number Publication Date
DE2048201A1 DE2048201A1 (de) 1971-10-14
DE2048201B2 true DE2048201B2 (de) 1976-08-05

Family

ID=26362969

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19702048201 Ceased DE2048201B2 (de) 1970-03-27 1970-09-30 Halbleiterbauelement

Country Status (6)

Country Link
US (1) US3694707A (cg-RX-API-DMAC7.html)
DE (1) DE2048201B2 (cg-RX-API-DMAC7.html)
ES (1) ES384149A1 (cg-RX-API-DMAC7.html)
FR (1) FR2083799A5 (cg-RX-API-DMAC7.html)
GB (1) GB1272033A (cg-RX-API-DMAC7.html)
NL (1) NL163903C (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2326314C2 (de) * 1973-05-23 1983-10-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von Reliefstrukturen
JPS55108763A (en) 1979-01-24 1980-08-21 Toshiba Corp Schottky barrier compound semiconductor device
DE3213988A1 (de) * 1982-04-16 1983-10-20 L. & C. Steinmüller GmbH, 5270 Gummersbach Verfahren zur reinigung von gasdurchstroemten waermetauschern
US5171716A (en) * 1986-12-19 1992-12-15 North American Philips Corp. Method of manufacturing semiconductor device with reduced packaging stress
US5045918A (en) * 1986-12-19 1991-09-03 North American Philips Corp. Semiconductor device with reduced packaging stress
US5068205A (en) * 1989-05-26 1991-11-26 General Signal Corporation Header mounted chemically sensitive ISFET and method of manufacture

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544318C3 (de) * 1965-10-16 1973-10-31 Telefunken Patentverwertungs Gmbh, 7900 Ulm Verfahren zum Erzeugen dotierter Zonen in Halbleiterkörpern
US3455020A (en) * 1966-10-13 1969-07-15 Rca Corp Method of fabricating insulated-gate field-effect devices
US3485684A (en) * 1967-03-30 1969-12-23 Trw Semiconductors Inc Dislocation enhancement control of silicon by introduction of large diameter atomic metals

Also Published As

Publication number Publication date
ES384149A1 (es) 1973-06-01
NL7014340A (cg-RX-API-DMAC7.html) 1971-09-29
DE2048201A1 (de) 1971-10-14
NL163903C (nl) 1980-10-15
US3694707A (en) 1972-09-26
FR2083799A5 (cg-RX-API-DMAC7.html) 1971-12-17
GB1272033A (en) 1972-04-26
NL163903B (nl) 1980-05-16

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Legal Events

Date Code Title Description
8235 Patent refused