NL163903C - Halfgeleiderinrichting, waarbij een deel van het oppervlak is bedekt met een isolerende laag en een op de isolerende laag aangebrachte beschermende laag van gedoteerd siliciumdioxyde. - Google Patents
Halfgeleiderinrichting, waarbij een deel van het oppervlak is bedekt met een isolerende laag en een op de isolerende laag aangebrachte beschermende laag van gedoteerd siliciumdioxyde.Info
- Publication number
- NL163903C NL163903C NL7014340.A NL7014340A NL163903C NL 163903 C NL163903 C NL 163903C NL 7014340 A NL7014340 A NL 7014340A NL 163903 C NL163903 C NL 163903C
- Authority
- NL
- Netherlands
- Prior art keywords
- insulating layer
- semiconductor device
- silicon dioxide
- doped silicon
- surface covered
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 2
- 239000010410 layer Substances 0.000 title 2
- 239000011241 protective layer Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Formation Of Insulating Films (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2537370A JPS4926474B1 (xx) | 1970-03-27 | 1970-03-27 | |
| JP5433570A JPS4926750B1 (xx) | 1970-06-24 | 1970-06-24 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL7014340A NL7014340A (xx) | 1971-09-29 |
| NL163903B NL163903B (nl) | 1980-05-16 |
| NL163903C true NL163903C (nl) | 1980-10-15 |
Family
ID=26362969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7014340.A NL163903C (nl) | 1970-03-27 | 1970-09-30 | Halfgeleiderinrichting, waarbij een deel van het oppervlak is bedekt met een isolerende laag en een op de isolerende laag aangebrachte beschermende laag van gedoteerd siliciumdioxyde. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3694707A (xx) |
| DE (1) | DE2048201B2 (xx) |
| ES (1) | ES384149A1 (xx) |
| FR (1) | FR2083799A5 (xx) |
| GB (1) | GB1272033A (xx) |
| NL (1) | NL163903C (xx) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2326314C2 (de) * | 1973-05-23 | 1983-10-27 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung von Reliefstrukturen |
| JPS55108763A (en) | 1979-01-24 | 1980-08-21 | Toshiba Corp | Schottky barrier compound semiconductor device |
| DE3213988A1 (de) * | 1982-04-16 | 1983-10-20 | L. & C. Steinmüller GmbH, 5270 Gummersbach | Verfahren zur reinigung von gasdurchstroemten waermetauschern |
| US5171716A (en) * | 1986-12-19 | 1992-12-15 | North American Philips Corp. | Method of manufacturing semiconductor device with reduced packaging stress |
| US5045918A (en) * | 1986-12-19 | 1991-09-03 | North American Philips Corp. | Semiconductor device with reduced packaging stress |
| US5068205A (en) * | 1989-05-26 | 1991-11-26 | General Signal Corporation | Header mounted chemically sensitive ISFET and method of manufacture |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1544318C3 (de) * | 1965-10-16 | 1973-10-31 | Telefunken Patentverwertungs Gmbh, 7900 Ulm | Verfahren zum Erzeugen dotierter Zonen in Halbleiterkörpern |
| US3455020A (en) * | 1966-10-13 | 1969-07-15 | Rca Corp | Method of fabricating insulated-gate field-effect devices |
| US3485684A (en) * | 1967-03-30 | 1969-12-23 | Trw Semiconductors Inc | Dislocation enhancement control of silicon by introduction of large diameter atomic metals |
-
1970
- 1970-09-29 US US76582A patent/US3694707A/en not_active Expired - Lifetime
- 1970-09-29 FR FR7035170A patent/FR2083799A5/fr not_active Expired
- 1970-09-30 DE DE19702048201 patent/DE2048201B2/de not_active Ceased
- 1970-09-30 NL NL7014340.A patent/NL163903C/xx not_active IP Right Cessation
- 1970-09-30 ES ES384149A patent/ES384149A1/es not_active Expired
- 1970-09-30 GB GB46412/70A patent/GB1272033A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3694707A (en) | 1972-09-26 |
| NL7014340A (xx) | 1971-09-29 |
| ES384149A1 (es) | 1973-06-01 |
| FR2083799A5 (xx) | 1971-12-17 |
| NL163903B (nl) | 1980-05-16 |
| DE2048201B2 (de) | 1976-08-05 |
| DE2048201A1 (de) | 1971-10-14 |
| GB1272033A (en) | 1972-04-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| V4 | Discontinued because of reaching the maximum lifetime of a patent |