GB1272033A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1272033A
GB1272033A GB46412/70A GB4641270A GB1272033A GB 1272033 A GB1272033 A GB 1272033A GB 46412/70 A GB46412/70 A GB 46412/70A GB 4641270 A GB4641270 A GB 4641270A GB 1272033 A GB1272033 A GB 1272033A
Authority
GB
United Kingdom
Prior art keywords
film
silicon
passivated
nitride
silicon dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB46412/70A
Other languages
English (en)
Inventor
Masakatsu Nakamura
Toshio Yonezawa
Taketoshi Kato
Masaharu Watanabe
Minoru Akatsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP45025373A external-priority patent/JPS4926474B1/ja
Priority claimed from JP45054335A external-priority patent/JPS4926750B1/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1272033A publication Critical patent/GB1272033A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
GB46412/70A 1970-03-27 1970-09-30 Semiconductor device Expired GB1272033A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP45025373A JPS4926474B1 (cg-RX-API-DMAC7.html) 1970-03-27 1970-03-27
JP45054335A JPS4926750B1 (cg-RX-API-DMAC7.html) 1970-06-24 1970-06-24

Publications (1)

Publication Number Publication Date
GB1272033A true GB1272033A (en) 1972-04-26

Family

ID=26362969

Family Applications (1)

Application Number Title Priority Date Filing Date
GB46412/70A Expired GB1272033A (en) 1970-03-27 1970-09-30 Semiconductor device

Country Status (6)

Country Link
US (1) US3694707A (cg-RX-API-DMAC7.html)
DE (1) DE2048201B2 (cg-RX-API-DMAC7.html)
ES (1) ES384149A1 (cg-RX-API-DMAC7.html)
FR (1) FR2083799A5 (cg-RX-API-DMAC7.html)
GB (1) GB1272033A (cg-RX-API-DMAC7.html)
NL (1) NL163903C (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4321612A (en) 1979-01-24 1982-03-23 Tokyo Shibaura Denki Kabushiki Kaisha Schottky barrier contact to compound semiconductor with three layer refractory metalization and high phosphorous content glass passivation

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2326314C2 (de) * 1973-05-23 1983-10-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von Reliefstrukturen
DE3213988A1 (de) * 1982-04-16 1983-10-20 L. & C. Steinmüller GmbH, 5270 Gummersbach Verfahren zur reinigung von gasdurchstroemten waermetauschern
US5171716A (en) * 1986-12-19 1992-12-15 North American Philips Corp. Method of manufacturing semiconductor device with reduced packaging stress
US5045918A (en) * 1986-12-19 1991-09-03 North American Philips Corp. Semiconductor device with reduced packaging stress
US5068205A (en) * 1989-05-26 1991-11-26 General Signal Corporation Header mounted chemically sensitive ISFET and method of manufacture

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544318C3 (de) * 1965-10-16 1973-10-31 Telefunken Patentverwertungs Gmbh, 7900 Ulm Verfahren zum Erzeugen dotierter Zonen in Halbleiterkörpern
US3455020A (en) * 1966-10-13 1969-07-15 Rca Corp Method of fabricating insulated-gate field-effect devices
US3485684A (en) * 1967-03-30 1969-12-23 Trw Semiconductors Inc Dislocation enhancement control of silicon by introduction of large diameter atomic metals

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4321612A (en) 1979-01-24 1982-03-23 Tokyo Shibaura Denki Kabushiki Kaisha Schottky barrier contact to compound semiconductor with three layer refractory metalization and high phosphorous content glass passivation

Also Published As

Publication number Publication date
ES384149A1 (es) 1973-06-01
NL7014340A (cg-RX-API-DMAC7.html) 1971-09-29
DE2048201A1 (de) 1971-10-14
NL163903C (nl) 1980-10-15
DE2048201B2 (de) 1976-08-05
US3694707A (en) 1972-09-26
FR2083799A5 (cg-RX-API-DMAC7.html) 1971-12-17
NL163903B (nl) 1980-05-16

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PE20 Patent expired after termination of 20 years