GB1197061A - Semi-Conductor Devices - Google Patents
Semi-Conductor DevicesInfo
- Publication number
- GB1197061A GB1197061A GB54996/66A GB5499666A GB1197061A GB 1197061 A GB1197061 A GB 1197061A GB 54996/66 A GB54996/66 A GB 54996/66A GB 5499666 A GB5499666 A GB 5499666A GB 1197061 A GB1197061 A GB 1197061A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- layer
- semi
- impurity
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
Abstract
1,197,061. Semi-conductor devices. JOSEPH LUCAS (INDUSTRIES) Ltd. 2 Nov., 1967 [8 Dec., 1966], No. 54996/66. Addition to 1,124,762. Heading H1K. In the method of producing a three layer semi-conductor device according to Specification 1,124,762 in which a raised portion is formed on one face of a wafer, the opposite face is masked to define an outer area and an inner area which lies completely within the projection of the raised portion on to that face, and an impurity is diffused into the wafer until three layers are produced with the junctions extending to said opposite face, the masking layer is of silicon nitride. A layer of silicon nitride is deposited on a silicon wafer by reacting silane with ammonia in the presence of excess hydrogen. The layer is then photomasked and etched using hydrofluoric acid to produce the mask. If the wafer is N-type the impurity diffused-in may be gallium or aluminium, and if the wafer is P-type the impurity may be phosphorus. A further region may be produced to form an SCR.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5288/66A GB1200596A (en) | 1966-11-25 | 1966-11-25 | Improvements in or relating to diffusion masks for semiconductor diffusion processes |
| GB54996/66A GB1197061A (en) | 1966-11-25 | 1966-12-08 | Semi-Conductor Devices |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5288/66A GB1200596A (en) | 1966-11-25 | 1966-11-25 | Improvements in or relating to diffusion masks for semiconductor diffusion processes |
| GB54996/66A GB1197061A (en) | 1966-11-25 | 1966-12-08 | Semi-Conductor Devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1197061A true GB1197061A (en) | 1970-07-01 |
Family
ID=35266804
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5288/66A Expired GB1200596A (en) | 1966-11-25 | 1966-11-25 | Improvements in or relating to diffusion masks for semiconductor diffusion processes |
| GB54996/66A Expired GB1197061A (en) | 1966-11-25 | 1966-12-08 | Semi-Conductor Devices |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5288/66A Expired GB1200596A (en) | 1966-11-25 | 1966-11-25 | Improvements in or relating to diffusion masks for semiconductor diffusion processes |
Country Status (1)
| Country | Link |
|---|---|
| GB (2) | GB1200596A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5311572A (en) * | 1976-07-19 | 1978-02-02 | Handotai Kenkyu Shinkokai | Method of making semiconductor device |
-
1966
- 1966-11-25 GB GB5288/66A patent/GB1200596A/en not_active Expired
- 1966-12-08 GB GB54996/66A patent/GB1197061A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1200596A (en) | 1970-07-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |