GB1300186A - Method for passivating mesa pn junction structures - Google Patents

Method for passivating mesa pn junction structures

Info

Publication number
GB1300186A
GB1300186A GB2996171A GB2996171A GB1300186A GB 1300186 A GB1300186 A GB 1300186A GB 2996171 A GB2996171 A GB 2996171A GB 2996171 A GB2996171 A GB 2996171A GB 1300186 A GB1300186 A GB 1300186A
Authority
GB
United Kingdom
Prior art keywords
mesa
silicon
layer
silicon nitride
passivating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2996171A
Inventor
Douglas Lee Elgan
Michael Francis Flahie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of GB1300186A publication Critical patent/GB1300186A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)

Abstract

1300186 Semi-conductor devices MOTOROLA Inc 25 June 1971 [22 July 1970] 29961/71 Heading H1K In a method of passivating a mesa PN junction device, a PN junction is formed in a silicon body, a layer 20 of silicon nitride is deposited on the body, a masking layer 18 of silicon dioxide is deposited over this and the silicon nitride is etched away except over that portion of the body which will become the top of the mesa, the silicon dioxide mask is removed, the silicon body is then etched away using the silicon nitride as a mask to form the mesa, a silicon dioxide layer is grown over the sides of the mesa by a thermal method, the silicon nitride layer is removed, and a metal contact layer is formed in its place.
GB2996171A 1970-07-22 1971-06-25 Method for passivating mesa pn junction structures Expired GB1300186A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5717870A 1970-07-22 1970-07-22

Publications (1)

Publication Number Publication Date
GB1300186A true GB1300186A (en) 1972-12-20

Family

ID=22008987

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2996171A Expired GB1300186A (en) 1970-07-22 1971-06-25 Method for passivating mesa pn junction structures

Country Status (5)

Country Link
BE (1) BE770277A (en)
DE (1) DE2136239A1 (en)
FR (1) FR2099527B1 (en)
GB (1) GB1300186A (en)
NL (1) NL7110058A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2119568A (en) * 1982-04-26 1983-11-16 Raytheon Co Method of forming a protective layer in a semiconductor structure
GB2192093A (en) * 1986-06-17 1987-12-31 Plessey Co Plc A local oxidation of silicon process

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2466859A1 (en) * 1979-10-05 1981-04-10 Thomson Csf SILICON NITRIDE MASKING AND GLAZING GLASSIVATION METHOD AND SEMICONDUCTOR COMPONENTS OBTAINED

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2119568A (en) * 1982-04-26 1983-11-16 Raytheon Co Method of forming a protective layer in a semiconductor structure
GB2192093A (en) * 1986-06-17 1987-12-31 Plessey Co Plc A local oxidation of silicon process
GB2192093B (en) * 1986-06-17 1989-12-13 Plessey Co Plc A local oxidation of silicon process

Also Published As

Publication number Publication date
NL7110058A (en) 1972-01-25
FR2099527A1 (en) 1972-03-17
DE2136239A1 (en) 1972-02-17
FR2099527B1 (en) 1974-04-05
BE770277A (en) 1972-01-20

Similar Documents

Publication Publication Date Title
JPS5284981A (en) Production of insulated gate type semiconductor device
GB1520925A (en) Semiconductor device manufacture
GB1338358A (en) Semiconductor devices
GB988903A (en) Semiconductor devices and methods of making same
GB1271815A (en) Improvements in or relating to methods of making semiconductor devices
GB1109371A (en) Metal-oxide-semiconductor field effect transistor
GB1300186A (en) Method for passivating mesa pn junction structures
JPS5378183A (en) Manufacture of semiconductor device
GB1477514A (en) Semiconductor devices
GB1205320A (en) Improvements in or relating to the production of semiconductor devices
GB1184797A (en) A Method of Making a Semiconductor Device
GB1353185A (en) Method of making a semiconductor device
JPS5258483A (en) Junction type field effect semiconductor device and its production
GB1216618A (en) Aluminium-alloy junction devices using silicon nitride as a mask
GB1220854A (en) Improvements in transistors
GB1197061A (en) Semi-Conductor Devices
JPS5235584A (en) Manufacturing process of semiconductor device
JPS539482A (en) Mis semiconductor device and its production
GB1477512A (en) Methods of manufacturing semiconductor devices
JPS5353254A (en) Semiconductor device
JPS5735368A (en) Manufacture of semiconductor device
JPS5376760A (en) Semiconductor rectifying device
GB1280491A (en) Semiconductor device
GB1069467A (en) Improvements in and relating to methods of masking
GB1032668A (en) Method for making semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees