GB1205320A - Improvements in or relating to the production of semiconductor devices - Google Patents
Improvements in or relating to the production of semiconductor devicesInfo
- Publication number
- GB1205320A GB1205320A GB5075268A GB5075268A GB1205320A GB 1205320 A GB1205320 A GB 1205320A GB 5075268 A GB5075268 A GB 5075268A GB 5075268 A GB5075268 A GB 5075268A GB 1205320 A GB1205320 A GB 1205320A
- Authority
- GB
- United Kingdom
- Prior art keywords
- nitride
- mesa
- silicon
- semi
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 4
- 150000004767 nitrides Chemical class 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
1,205,320. Semi-conductor devices. NIPPON TELEGRAPH & TELEPHONE PUBLIC CORP. 25 Oct., 1968 [28 Oct., 1967], No. 50752/68. Heading H1K. A method of producing a mesa type semiconductor element structure, wherein the sides of the mesa are covered with an insulating layer, comprises forming on that part of the surface of the semi-conductor element where the mesa is required a layer 3 of nitride and then oxidizing the remainder of the surface of the element to a depth H such that after the nitride layer 3 is removed to expose the semi-conductor surface the oxide layer 4 still remains over the rest of the surface to leave a mesa of height h whose side walls are protected by the oxide. A PN junction can then be formed in this mesa and a metal contact deposited on its top surface. The semi-conductor material may be silicon, germanium or gallium arsenide, and the nitride layer may be silicon nitride or tantalum nitride. In a further embodiment of the method, where accurately formed hollows are required in a silicon crystal surface, a silicon nitride mask is applied on the surface and apertures formed where the hollows are required. The silicon is then oxidized over these exposed regions into the crystal and then selectively removed to leave the required hollows. The nitride layers are grown from gases and the oxide layers by oxidation, and both are removed by etching processes. The method may be applied in the production of diodes, or transistors of the planar type
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6900167 | 1967-10-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1205320A true GB1205320A (en) | 1970-09-16 |
Family
ID=13389909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5075268A Expired GB1205320A (en) | 1967-10-28 | 1968-10-25 | Improvements in or relating to the production of semiconductor devices |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE1805707B2 (en) |
FR (1) | FR1594694A (en) |
GB (1) | GB1205320A (en) |
NL (1) | NL6815286A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2449332A1 (en) * | 1979-02-13 | 1980-09-12 | Itt | METHOD OF PROTECTING CONTACT AREAS ON SEMICONDUCTOR DEVICES |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL159817B (en) * | 1966-10-05 | 1979-03-15 | Philips Nv | PROCESS FOR THE MANUFACTURE OF A SEMI-CONDUCTOR DEVICE. |
GB1332931A (en) * | 1970-01-15 | 1973-10-10 | Mullard Ltd | Methods of manufacturing a semiconductor device |
US4002511A (en) * | 1975-04-16 | 1977-01-11 | Ibm Corporation | Method for forming masks comprising silicon nitride and novel mask structures produced thereby |
IT1080473B (en) * | 1977-07-25 | 1985-05-16 | Ducati Elettrotecnica Spa | AUTORIGENE RANTE ELECTRIC CONDENSER WITH MIXED DIELECTRIC |
JPS5955052A (en) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
DE3312076A1 (en) * | 1983-04-02 | 1984-10-04 | O.D.A.M. - Office de Distribution d'Appareils Médicaux, Wissembourg | HIGH ENERGY DENSITY CAPACITOR AND METHOD FOR PRODUCING THE SAME |
-
1968
- 1968-10-25 NL NL6815286A patent/NL6815286A/xx unknown
- 1968-10-25 GB GB5075268A patent/GB1205320A/en not_active Expired
- 1968-10-28 FR FR1594694D patent/FR1594694A/fr not_active Expired
- 1968-10-28 DE DE19681805707 patent/DE1805707B2/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2449332A1 (en) * | 1979-02-13 | 1980-09-12 | Itt | METHOD OF PROTECTING CONTACT AREAS ON SEMICONDUCTOR DEVICES |
Also Published As
Publication number | Publication date |
---|---|
FR1594694A (en) | 1970-07-17 |
DE1805707A1 (en) | 1969-08-21 |
NL6815286A (en) | 1969-05-01 |
DE1805707B2 (en) | 1972-03-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
PE20 | Patent expired after termination of 20 years |