JPS5311572A - Method of making semiconductor device - Google Patents

Method of making semiconductor device

Info

Publication number
JPS5311572A
JPS5311572A JP8584576A JP8584576A JPS5311572A JP S5311572 A JPS5311572 A JP S5311572A JP 8584576 A JP8584576 A JP 8584576A JP 8584576 A JP8584576 A JP 8584576A JP S5311572 A JPS5311572 A JP S5311572A
Authority
JP
Japan
Prior art keywords
semiconductor device
making semiconductor
making
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8584576A
Other languages
Japanese (ja)
Inventor
Jiyunichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP8584576A priority Critical patent/JPS5311572A/en
Priority to CA282,953A priority patent/CA1111146A/en
Priority to FR7722125A priority patent/FR2359506A1/en
Priority to DE19772732582 priority patent/DE2732582C2/en
Publication of JPS5311572A publication Critical patent/JPS5311572A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thyristors (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP8584576A 1976-07-19 1976-07-19 Method of making semiconductor device Pending JPS5311572A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP8584576A JPS5311572A (en) 1976-07-19 1976-07-19 Method of making semiconductor device
CA282,953A CA1111146A (en) 1976-07-19 1977-07-18 Method of manufacturing semiconductor device
FR7722125A FR2359506A1 (en) 1976-07-19 1977-07-19 Prodn. of semiconductor device - with dissociation centres of second conduction type injected, compensating second zone
DE19772732582 DE2732582C2 (en) 1976-07-19 1977-07-19 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8584576A JPS5311572A (en) 1976-07-19 1976-07-19 Method of making semiconductor device

Publications (1)

Publication Number Publication Date
JPS5311572A true JPS5311572A (en) 1978-02-02

Family

ID=13870194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8584576A Pending JPS5311572A (en) 1976-07-19 1976-07-19 Method of making semiconductor device

Country Status (4)

Country Link
JP (1) JPS5311572A (en)
CA (1) CA1111146A (en)
DE (1) DE2732582C2 (en)
FR (1) FR2359506A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5088320A (en) * 1973-12-07 1975-07-16
JPS58121684A (en) * 1982-01-13 1983-07-20 Hitachi Ltd Manufacture of semiconductor device
JPS58175874A (en) * 1982-04-08 1983-10-15 Sanyo Electric Co Ltd Formation of vertical type junction fet
JPS62162325A (en) * 1986-01-13 1987-07-18 Sanyo Electric Co Ltd Manufacture of semiconductor device
JPS62198120A (en) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd Manufacture of semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1464840A1 (en) * 1961-07-13 1970-03-26 Itt Ind Gmbh Deutsche Semiconductor device and manufacturing process
GB1129531A (en) * 1964-12-16 1968-10-09 Associated Semiconductor Mft Improvements in and relating to semiconductor devices
GB1200596A (en) * 1966-11-25 1970-07-29 Plessey Co Ltd Improvements in or relating to diffusion masks for semiconductor diffusion processes
DE1644028A1 (en) * 1967-06-01 1971-03-25 Telefunken Patent Method for the diffusion of interference points into a limited area of a semiconductor body
NL153029B (en) * 1968-05-21 1977-04-15 Western Electric Co PROCESS OF MANUFACTURE OF A PLANAR ZENER DIODE AND PLANAR ZENER DIODE MADE BY APPLYING THIS PROCESS.

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5088320A (en) * 1973-12-07 1975-07-16
JPS5920014B2 (en) * 1973-12-07 1984-05-10 帝人株式会社 How to wind false twisted yarn
JPS58121684A (en) * 1982-01-13 1983-07-20 Hitachi Ltd Manufacture of semiconductor device
JPS58175874A (en) * 1982-04-08 1983-10-15 Sanyo Electric Co Ltd Formation of vertical type junction fet
JPS62162325A (en) * 1986-01-13 1987-07-18 Sanyo Electric Co Ltd Manufacture of semiconductor device
JPS62198120A (en) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
CA1111146A (en) 1981-10-20
DE2732582C2 (en) 1994-02-10
FR2359506B1 (en) 1984-03-30
FR2359506A1 (en) 1978-02-17
DE2732582A1 (en) 1978-01-26

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