FR2359506B1 - - Google Patents
Info
- Publication number
- FR2359506B1 FR2359506B1 FR7722125A FR7722125A FR2359506B1 FR 2359506 B1 FR2359506 B1 FR 2359506B1 FR 7722125 A FR7722125 A FR 7722125A FR 7722125 A FR7722125 A FR 7722125A FR 2359506 B1 FR2359506 B1 FR 2359506B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thyristors (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Weting (AREA)
- Junction Field-Effect Transistors (AREA)
- Local Oxidation Of Silicon (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8584576A JPS5311572A (en) | 1976-07-19 | 1976-07-19 | Method of making semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2359506A1 FR2359506A1 (en) | 1978-02-17 |
| FR2359506B1 true FR2359506B1 (en) | 1984-03-30 |
Family
ID=13870194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7722125A Granted FR2359506A1 (en) | 1976-07-19 | 1977-07-19 | Prodn. of semiconductor device - with dissociation centres of second conduction type injected, compensating second zone |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5311572A (en) |
| CA (1) | CA1111146A (en) |
| DE (1) | DE2732582C2 (en) |
| FR (1) | FR2359506A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5920014B2 (en) * | 1973-12-07 | 1984-05-10 | 帝人株式会社 | How to wind false twisted yarn |
| JPS58121684A (en) * | 1982-01-13 | 1983-07-20 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS58175874A (en) * | 1982-04-08 | 1983-10-15 | Sanyo Electric Co Ltd | Formation of vertical type junction fet |
| JPS62162325A (en) * | 1986-01-13 | 1987-07-18 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
| JPS62198120A (en) * | 1986-02-25 | 1987-09-01 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1464840A1 (en) * | 1961-07-13 | 1970-03-26 | Itt Ind Gmbh Deutsche | Semiconductor device and manufacturing process |
| GB1129531A (en) * | 1964-12-16 | 1968-10-09 | Associated Semiconductor Mft | Improvements in and relating to semiconductor devices |
| GB1200596A (en) * | 1966-11-25 | 1970-07-29 | Plessey Co Ltd | Improvements in or relating to diffusion masks for semiconductor diffusion processes |
| DE1644028A1 (en) * | 1967-06-01 | 1971-03-25 | Telefunken Patent | Method for the diffusion of interference points into a limited area of a semiconductor body |
| NL153029B (en) * | 1968-05-21 | 1977-04-15 | Western Electric Co | PROCESS OF MANUFACTURE OF A PLANAR ZENER DIODE AND PLANAR ZENER DIODE MADE BY APPLYING THIS PROCESS. |
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1976
- 1976-07-19 JP JP8584576A patent/JPS5311572A/en active Pending
-
1977
- 1977-07-18 CA CA282,953A patent/CA1111146A/en not_active Expired
- 1977-07-19 FR FR7722125A patent/FR2359506A1/en active Granted
- 1977-07-19 DE DE19772732582 patent/DE2732582C2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5311572A (en) | 1978-02-02 |
| DE2732582A1 (en) | 1978-01-26 |
| FR2359506A1 (en) | 1978-02-17 |
| DE2732582C2 (en) | 1994-02-10 |
| CA1111146A (en) | 1981-10-20 |