DE202008018212U1 - Gehäuse für eine lichtemittierende Vorrichtung - Google Patents

Gehäuse für eine lichtemittierende Vorrichtung Download PDF

Info

Publication number
DE202008018212U1
DE202008018212U1 DE202008018212U DE202008018212U DE202008018212U1 DE 202008018212 U1 DE202008018212 U1 DE 202008018212U1 DE 202008018212 U DE202008018212 U DE 202008018212U DE 202008018212 U DE202008018212 U DE 202008018212U DE 202008018212 U1 DE202008018212 U1 DE 202008018212U1
Authority
DE
Germany
Prior art keywords
light
emitting device
substrate
metal layer
housing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE202008018212U
Other languages
German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40281979&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE202008018212(U1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of DE202008018212U1 publication Critical patent/DE202008018212U1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires

Landscapes

  • Led Device Packages (AREA)
DE202008018212U 2007-07-25 2008-07-23 Gehäuse für eine lichtemittierende Vorrichtung Expired - Lifetime DE202008018212U1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070074399A KR101283282B1 (ko) 2007-07-25 2007-07-25 발광 소자 패키지 및 그 제조방법
KR20070074399 2007-07-25

Publications (1)

Publication Number Publication Date
DE202008018212U1 true DE202008018212U1 (de) 2012-01-18

Family

ID=40281979

Family Applications (3)

Application Number Title Priority Date Filing Date
DE202008018212U Expired - Lifetime DE202008018212U1 (de) 2007-07-25 2008-07-23 Gehäuse für eine lichtemittierende Vorrichtung
DE202008018233U Expired - Lifetime DE202008018233U1 (de) 2007-07-25 2008-07-23 Gehäuse für eine lichtemittierende Vorrichtung
DE202008018180U Expired - Lifetime DE202008018180U1 (de) 2007-07-25 2008-07-23 Gehäuse für eine lichtemittierende Vorrichtung

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE202008018233U Expired - Lifetime DE202008018233U1 (de) 2007-07-25 2008-07-23 Gehäuse für eine lichtemittierende Vorrichtung
DE202008018180U Expired - Lifetime DE202008018180U1 (de) 2007-07-25 2008-07-23 Gehäuse für eine lichtemittierende Vorrichtung

Country Status (7)

Country Link
US (2) US8624268B2 (cg-RX-API-DMAC7.html)
EP (1) EP2176895B8 (cg-RX-API-DMAC7.html)
JP (4) JP5620269B2 (cg-RX-API-DMAC7.html)
KR (1) KR101283282B1 (cg-RX-API-DMAC7.html)
CN (1) CN101755348A (cg-RX-API-DMAC7.html)
DE (3) DE202008018212U1 (cg-RX-API-DMAC7.html)
WO (1) WO2009014376A2 (cg-RX-API-DMAC7.html)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101020993B1 (ko) * 2009-03-10 2011-03-09 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
KR101072212B1 (ko) * 2010-01-05 2011-10-10 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR101091304B1 (ko) 2010-01-20 2011-12-07 엘지이노텍 주식회사 발광 소자 패키지 및 그 제조방법
KR100986571B1 (ko) * 2010-02-04 2010-10-07 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
KR101637581B1 (ko) * 2010-03-09 2016-07-07 엘지이노텍 주식회사 발광 소자 패키지 및 그 제조방법
US8525213B2 (en) * 2010-03-30 2013-09-03 Lg Innotek Co., Ltd. Light emitting device having multiple cavities and light unit having the same
KR101028329B1 (ko) * 2010-04-28 2011-04-12 엘지이노텍 주식회사 발광 소자 패키지 및 그 제조방법
KR101659357B1 (ko) * 2010-05-12 2016-09-23 엘지이노텍 주식회사 발광소자패키지
US8766526B2 (en) * 2010-06-28 2014-07-01 Lg Innotek Co., Ltd. Light-emitting device package providing improved luminous efficacy and uniform distribution
KR101208174B1 (ko) * 2010-07-28 2012-12-04 엘지이노텍 주식회사 광학시트 및 이를 포함하는 발광소자패키지
US8564000B2 (en) 2010-11-22 2013-10-22 Cree, Inc. Light emitting devices for light emitting diodes (LEDs)
US8624271B2 (en) 2010-11-22 2014-01-07 Cree, Inc. Light emitting devices
US8575639B2 (en) 2011-02-16 2013-11-05 Cree, Inc. Light emitting devices for light emitting diodes (LEDs)
US8455908B2 (en) 2011-02-16 2013-06-04 Cree, Inc. Light emitting devices
JP5175956B2 (ja) * 2011-07-06 2013-04-03 シャープ株式会社 発光装置および表示装置
JP5228089B2 (ja) * 2011-07-06 2013-07-03 シャープ株式会社 発光装置および表示装置
KR20130014887A (ko) 2011-08-01 2013-02-12 삼성전자주식회사 발광소자 패키지 및 그 제조 방법
CN104081112B (zh) 2011-11-07 2016-03-16 克利公司 高电压阵列发光二极管(led)器件、设备和方法
JP2013110273A (ja) * 2011-11-21 2013-06-06 Sharp Corp 半導体発光装置
US10134961B2 (en) 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
US9735198B2 (en) 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
WO2013185836A1 (en) * 2012-06-15 2013-12-19 Sferrum Gmbh Led package and method for producing the same
US9269745B2 (en) * 2012-11-23 2016-02-23 Seoul Viosys Co., Ltd. Light emitting diode having a plurality of light emitting units
KR102075109B1 (ko) * 2012-12-18 2020-02-10 엘지이노텍 주식회사 발광소자 패키지
US9345091B2 (en) 2013-02-08 2016-05-17 Cree, Inc. Light emitting device (LED) light fixture control systems and related methods
CN105867013A (zh) * 2015-01-24 2016-08-17 鸿富锦精密工业（深圳）有限公司 显示装置以及光源模组
KR102407329B1 (ko) * 2015-08-05 2022-06-13 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 광원 모듈 및 이를 구비한 조명 장치
KR102528300B1 (ko) 2016-03-10 2023-05-04 삼성디스플레이 주식회사 디스플레이 장치
DE102016115630A1 (de) * 2016-08-23 2018-03-01 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement
JP6729254B2 (ja) * 2016-09-30 2020-07-22 日亜化学工業株式会社 発光装置及び表示装置
USD823492S1 (en) 2016-10-04 2018-07-17 Cree, Inc. Light emitting device
CN111341750B (zh) * 2018-12-19 2024-03-01 奥特斯奥地利科技与系统技术有限公司 包括有导电基部结构的部件承载件及制造方法
JP7317635B2 (ja) * 2019-08-29 2023-07-31 株式会社ジャパンディスプレイ 表示装置
US11830833B2 (en) * 2020-07-24 2023-11-28 Innolux Corporation Electronic substrate and electronic device
US20230034456A1 (en) * 2021-07-30 2023-02-02 Seoul Viosys Co., Ltd. Light emitting module and display apparatus by using the same
US11784130B2 (en) * 2021-08-27 2023-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of package with underfill

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59166535A (ja) 1983-03-14 1984-09-19 Nissan Motor Co Ltd 樹脂成型物の塗装方法
JP3505353B2 (ja) 1997-07-02 2004-03-08 株式会社東芝 半導体発光装置
US6534794B1 (en) * 1999-08-05 2003-03-18 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting unit, optical apparatus and optical disk system having heat sinking means and a heating element incorporated with the mounting system
JP2001111165A (ja) 1999-08-05 2001-04-20 Matsushita Electronics Industry Corp 半導体発光装置，光ヘッド装置及び光ディスク装置
JP2001196644A (ja) 2000-01-11 2001-07-19 Nichia Chem Ind Ltd 光半導体装置及びその製造方法
JP4222017B2 (ja) 2001-12-18 2009-02-12 日亜化学工業株式会社 発光装置
KR20030055625A (ko) 2001-12-27 2003-07-04 에스케이 텔레콤주식회사 이동 통신망에서의 ｐｐｇ를 이용한 단말 대 단말간콘텐츠 전송 시스템
JP4277583B2 (ja) 2003-05-27 2009-06-10 パナソニック電工株式会社 半導体発光装置
JP4349032B2 (ja) 2003-08-05 2009-10-21 日亜化学工業株式会社 発光装置及びその製造方法
KR100574557B1 (ko) * 2003-08-12 2006-04-27 엘지이노텍 주식회사 발광 다이오드 패키지 및 그 제조방법
JP4774201B2 (ja) 2003-10-08 2011-09-14 日亜化学工業株式会社 パッケージ成形体及び半導体装置
JP2005285899A (ja) 2004-03-29 2005-10-13 Kawaguchiko Seimitsu Co Ltd 発光ダイオードのパッケージ構造
JP2005311153A (ja) 2004-04-23 2005-11-04 Harison Toshiba Lighting Corp 発光素子の外囲器
KR100586968B1 (ko) * 2004-05-28 2006-06-08 삼성전기주식회사 Ｌｅｄ 패키지 및 이를 구비한 액정표시장치용 백라이트어셈블리
KR100586973B1 (ko) * 2004-06-29 2006-06-08 삼성전기주식회사 돌기부가 형성된 기판을 구비한 질화물 반도체 발광소자
KR100927256B1 (ko) * 2004-07-09 2009-11-16 엘지전자 주식회사 제너다이오드가 집적된 발광소자 서브마운트 제작방법
KR100613066B1 (ko) * 2004-07-09 2006-08-16 서울반도체 주식회사 일체형 방열판을 갖는 발광 다이오드 패키지 및 그것을제조하는 방법
JP4254669B2 (ja) * 2004-09-07 2009-04-15 豊田合成株式会社 発光装置
KR100629593B1 (ko) * 2004-09-07 2006-09-27 엘지이노텍 주식회사 반도체발광소자 패키지 및 그 제조방법
JP4353042B2 (ja) 2004-09-27 2009-10-28 パナソニック電工株式会社 半導体発光装置
US7866853B2 (en) * 2004-11-19 2011-01-11 Fujikura Ltd. Light-emitting element mounting substrate and manufacturing method thereof, light-emitting element module and manufacturing method thereof, display device, lighting device, and traffic light
JP4176703B2 (ja) * 2004-11-25 2008-11-05 松下電器産業株式会社 半導体発光装置、照明装置、携帯通信機器、カメラ、及び製造方法
KR101139891B1 (ko) * 2005-01-31 2012-04-27 렌슬러 폴리테크닉 인스티튜트 확산 반사면을 구비한 발광 다이오드 소자
EP1686630A3 (en) * 2005-01-31 2009-03-04 Samsung Electronics Co., Ltd. Led device having diffuse reflective surface
JP2006253288A (ja) 2005-03-09 2006-09-21 Fuji Photo Film Co Ltd 発光装置及びその製造方法
JP4655735B2 (ja) 2005-04-20 2011-03-23 パナソニック電工株式会社 Ｌｅｄユニット
JP4343137B2 (ja) 2005-04-25 2009-10-14 株式会社フジクラ 発光素子実装用基板、光源、照明装置、表示装置及び交通信号機、発光素子実装用基板の製造方法
JP2006324438A (ja) 2005-05-18 2006-11-30 Hitachi Cable Precision Co Ltd ヒートシンク付表面実装型ｌｅｄパッケージの製造方法
KR100719072B1 (ko) 2005-10-28 2007-05-16 (주) 아모센스 엘이디 패키지의 세라믹의 경사면 형성 방법
JP5214128B2 (ja) * 2005-11-22 2013-06-19 シャープ株式会社 発光素子及び発光素子を備えたバックライトユニット
JP2007157805A (ja) * 2005-12-01 2007-06-21 Stanley Electric Co Ltd Ｌｅｄパッケージ、発光装置及びｌｅｄパッケージの製造方法
JP4817820B2 (ja) 2005-12-01 2011-11-16 スタンレー電気株式会社 Ｌｅｄパッケージ、発光装置及びｌｅｄパッケージの製造方法
KR100746783B1 (ko) 2006-02-28 2007-08-06 엘지전자 주식회사 발광소자 패키지 및 그 제조방법
EP2924498A1 (en) * 2006-04-06 2015-09-30 Semiconductor Energy Laboratory Co, Ltd. Liquid crystal desplay device, semiconductor device, and electronic appliance
JP2007305785A (ja) * 2006-05-11 2007-11-22 Nichia Chem Ind Ltd 発光装置
KR20090012493A (ko) * 2007-07-30 2009-02-04 삼성전기주식회사 광자결정 발광소자

Also Published As

Publication number Publication date
JP2010534413A (ja) 2010-11-04
JP5620269B2 (ja) 2014-11-05
WO2009014376A2 (en) 2009-01-29
EP2176895B1 (en) 2017-04-12
US8624268B2 (en) 2014-01-07
DE202008018233U1 (de) 2012-03-07
JP3176890U (ja) 2012-07-12
KR101283282B1 (ko) 2013-07-11
JP2014222771A (ja) 2014-11-27
EP2176895A2 (en) 2010-04-21
EP2176895B8 (en) 2017-07-12
US20140077249A1 (en) 2014-03-20
CN101755348A (zh) 2010-06-23
WO2009014376A3 (en) 2009-03-19
KR20090011121A (ko) 2009-02-02
EP2176895A4 (en) 2015-07-15
US20100224903A1 (en) 2010-09-09
JP3175474U (ja) 2012-05-17
US9287466B2 (en) 2016-03-15
DE202008018180U1 (de) 2011-11-21

Similar Documents

Publication Publication Date Title
DE202008018233U1 (de) Gehäuse für eine lichtemittierende Vorrichtung
DE112006004221B4 (de) Lichtemittierende Anordnung mit gruppierten lichtemittierenden Zellen
DE112011103186B4 (de) Lichtemittierende Diodeneinheit auf Waferebene
EP2130235B1 (de) Leuchtdiodenchip mit metallischer spiegelschicht, durchkontaktierung, tunnelkontakt und ladungsträgerreservoir
DE102013105030B4 (de) Lichtemittierende Hableitervorrichtung mit Multi-Zellenarray
DE202009018878U1 (de) Lichtemissionsvorrichtungsbaugruppe
DE202009018568U1 (de) Lichtemittierende Diode und lichtemittierende Vorrichtung
DE202018006444U1 (de) Lichtemittierender Leuchtfaden
DE202009018090U1 (de) Halbleiter-Lichtemittervorrichtung
EP2596535A1 (de) Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements
DE202009018965U1 (de) Effiziente LED-Anordnung
EP2553726A1 (de) Optoelektronischer halbleiterchip
DE112015002379B4 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterchips sowie optoelektronischer Halbleiterchip
EP2345074A1 (de) Trägerkörper für ein halbleiterbauelement, halbleiterbauelement und verfahren zur herstellung eines trägerkörpers
DE112016002539B4 (de) Leuchtdiode
DE102008051048A1 (de) Optoelektronischer Halbleiterkörper
DE202007019302U1 (de) Lichtemittierende Halbleitervorrichtung
DE102013215650B4 (de) Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102017111706A1 (de) Lichtemissionsvorrichtung
DE102011083691B4 (de) Optoelektronisches halbleiterbauteil
DE102012105772A1 (de) Halbleiter-Leuchtdiodenvorrichtungs-Verpackung
DE112018006755B4 (de) Eine Fahrzeuglampe, die eine lichtemittierende Halbleitervorrichtung verwendet
DE21744964T1 (de) Mikrolichtleuchtdiode mit hoher lichtauskopplung
WO2025242417A1 (de) Lichtemittierende vorrichtung mit einer ingaalp schicht und verfahren zur herstellung
DE102024104316A1 (de) Lichtemittierende vorrichtung

Legal Events

Date Code Title Description
R207 Utility model specification

Effective date: 20120308

R150 Utility model maintained after payment of first maintenance fee after three years

Effective date: 20120329

R151 Utility model maintained after payment of second maintenance fee after six years

Effective date: 20140625

R152 Utility model maintained after payment of third maintenance fee after eight years
R071 Expiry of right