DE1135671B - Verfahren zum Herstellen eines pn-UEbergangs und/oder eines Gradienten eines elektrisch wirksamen Elements in einem Halbleiterkristall - Google Patents
Verfahren zum Herstellen eines pn-UEbergangs und/oder eines Gradienten eines elektrisch wirksamen Elements in einem HalbleiterkristallInfo
- Publication number
- DE1135671B DE1135671B DEW22927A DEW0022927A DE1135671B DE 1135671 B DE1135671 B DE 1135671B DE W22927 A DEW22927 A DE W22927A DE W0022927 A DEW0022927 A DE W0022927A DE 1135671 B DE1135671 B DE 1135671B
- Authority
- DE
- Germany
- Prior art keywords
- concentration
- electrically active
- gradient
- junction
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 20
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 230000008018 melting Effects 0.000 claims description 22
- 238000002844 melting Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 19
- 238000007711 solidification Methods 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 230000008023 solidification Effects 0.000 claims description 13
- 239000000155 melt Substances 0.000 claims description 8
- 239000000370 acceptor Substances 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 241000947853 Vibrionales Species 0.000 claims description 2
- 239000000289 melt material Substances 0.000 claims description 2
- 239000006104 solid solution Substances 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 description 19
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 19
- 238000000034 method Methods 0.000 description 19
- 239000007788 liquid Substances 0.000 description 17
- 239000007787 solid Substances 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 14
- 239000000126 substance Substances 0.000 description 13
- 239000012535 impurity Substances 0.000 description 12
- 229910052732 germanium Inorganic materials 0.000 description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000007858 starting material Substances 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005204 segregation Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 239000007937 lozenge Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 210000003298 dental enamel Anatomy 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000011081 inoculation Methods 0.000 description 2
- 239000002054 inoculum Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000002194 freeze distillation Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- -1 germanium ions Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 235000010603 pastilles Nutrition 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000000306 recurrent effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/02—Other methods of shaping glass by casting molten glass, e.g. injection moulding
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B5/00—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
- C03B5/06—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in pot furnaces
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B5/00—General methods of reducing to metals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US256791A US2739088A (en) | 1951-11-16 | 1951-11-16 | Process for controlling solute segregation by zone-melting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1135671B true DE1135671B (de) | 1962-08-30 |
Family
ID=22973593
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEW8223A Pending DE1032555B (de) | 1951-11-16 | 1952-03-28 | Verfahren und Vorrichtung zum Zonenschmelzen |
| DEW22927A Pending DE1135671B (de) | 1951-11-16 | 1952-03-28 | Verfahren zum Herstellen eines pn-UEbergangs und/oder eines Gradienten eines elektrisch wirksamen Elements in einem Halbleiterkristall |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEW8223A Pending DE1032555B (de) | 1951-11-16 | 1952-03-28 | Verfahren und Vorrichtung zum Zonenschmelzen |
Country Status (7)
Families Citing this family (132)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3125532A (en) * | 1964-03-17 | Method of doping semiconductor | ||
| BE561652A (US06534493-20030318-C00166.png) * | 1952-08-01 | |||
| US2798018A (en) * | 1952-09-29 | 1957-07-02 | Carnegie Inst Of Technology | Method of removing gaseous segregation from metals |
| US3060123A (en) * | 1952-12-17 | 1962-10-23 | Bell Telephone Labor Inc | Method of processing semiconductive materials |
| DE1061527B (de) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken |
| US3234009A (en) * | 1953-02-14 | 1966-02-08 | Siemens Ag | Method and device for the successive zone melting and resolidifying of extremely pure substances |
| DE1056840B (de) * | 1953-02-14 | 1959-05-06 | Siemens Ag | Verfahren zum Verteilen von Fremdstoffkomponenten in Halbleiterstaeben durch ein tiegelloses Zonenschmelzverfahren |
| US2972525A (en) * | 1953-02-26 | 1961-02-21 | Siemens Ag | Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance |
| US2836520A (en) * | 1953-08-17 | 1958-05-27 | Westinghouse Electric Corp | Method of making junction transistors |
| BE531626A (US06534493-20030318-C00166.png) * | 1953-09-04 | |||
| US2933384A (en) * | 1953-09-19 | 1960-04-19 | Siemens Ag | Method of melting compounds without decomposition |
| US2861017A (en) * | 1953-09-30 | 1958-11-18 | Honeywell Regulator Co | Method of preparing semi-conductor devices |
| DE1301862B (de) * | 1953-10-21 | 1969-08-28 | Allg Elek Zitaets Ges Aeg Tele | Verfahren zum Herstellen eines Drifttransistors |
| US2845371A (en) * | 1953-11-27 | 1958-07-29 | Raytheon Mfg Co | Process of producing junctions in semiconductors |
| US2792317A (en) * | 1954-01-28 | 1957-05-14 | Westinghouse Electric Corp | Method of producing multiple p-n junctions |
| DE1188042B (de) * | 1954-01-29 | 1965-03-04 | Siemens Ag | Vorrichtung zum tiegellosen Zonenschmelzen eines stabfoermigen kristallinen Halbleiterkoerpers |
| DE1175447B (de) * | 1954-01-29 | 1964-08-06 | Licentia Gmbh | Verfahren zur Herstellung von Halbleiter-kristallen durch tiegelfreies Zonenschmelzen |
| US2826666A (en) * | 1954-02-15 | 1958-03-11 | Tung Sol Electric Inc | Improvement in apparatus for growing single crystals |
| DE1178611B (de) * | 1954-02-20 | 1964-09-24 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen |
| US3010857A (en) * | 1954-03-01 | 1961-11-28 | Rca Corp | Semi-conductor devices and methods of making same |
| GB781795A (en) * | 1954-03-12 | 1957-08-28 | Gen Electric | Improvements relating to the manufacture of p-n junction devices |
| NL111118C (US06534493-20030318-C00166.png) * | 1954-04-01 | |||
| US2964396A (en) * | 1954-05-24 | 1960-12-13 | Siemens Ag | Producing semiconductor substances of highest purity |
| DE1253235B (de) * | 1954-05-25 | 1967-11-02 | Siemens Ag | Verfahren zum Herstellen stabfoermiger Halbleiterkristalle |
| GB797950A (en) * | 1954-06-10 | 1958-07-09 | Rca Corp | Semi-conductor alloys |
| DE1184971B (de) * | 1954-06-22 | 1965-01-07 | Siemens Ag | Verfahren zum tiegellosen Schmelzen von stabfoermigen Koerpern aus reinstem Halbleitermaterial |
| DE1215649B (de) * | 1954-06-30 | 1966-05-05 | Siemens Ag | Verfahren zum Herstellen eines extrem reinen, stabfoermigen Halbleiterkristalls |
| US2835612A (en) * | 1954-08-23 | 1958-05-20 | Motorola Inc | Semiconductor purification process |
| DE1029803B (de) * | 1954-09-18 | 1958-05-14 | Siemens Ag | Verfahren zur Herstellung einer Verbindung oder einer Legierung in kristalliner Form durch Zusammen-schmelzen der Komponenten in einem abgeschlossenen System |
| US2892739A (en) * | 1954-10-01 | 1959-06-30 | Honeywell Regulator Co | Crystal growing procedure |
| NL200888A (US06534493-20030318-C00166.png) * | 1954-10-29 | |||
| US2825549A (en) * | 1954-12-28 | 1958-03-04 | Itt | Mold for semi-conductor ingots |
| GB831305A (en) * | 1955-01-11 | 1960-03-30 | Ass Elect Ind | Improvements relating to the refining of heavy metals by zone melting |
| US2999776A (en) * | 1955-01-13 | 1961-09-12 | Siemens Ag | Method of producing differentiated doping zones in semiconductor crystals |
| US2950219A (en) * | 1955-02-23 | 1960-08-23 | Rauland Corp | Method of manufacturing semiconductor crystals |
| BE546222A (US06534493-20030318-C00166.png) * | 1955-03-23 | |||
| US2822308A (en) * | 1955-03-29 | 1958-02-04 | Gen Electric | Semiconductor p-n junction units and method of making the same |
| US2907715A (en) * | 1955-04-04 | 1959-10-06 | Texas Instruments Inc | Method for producing single-crystal semiconductor material |
| US2841509A (en) * | 1955-04-27 | 1958-07-01 | Rca Corp | Method of doping semi-conductive material |
| US2931743A (en) * | 1955-05-02 | 1960-04-05 | Philco Corp | Method of fusing metal body to another body |
| US2817608A (en) * | 1955-05-02 | 1957-12-24 | Rca Corp | Melt-quench method of making transistor devices |
| NL206424A (US06534493-20030318-C00166.png) * | 1955-06-17 | |||
| US2824030A (en) * | 1955-07-21 | 1958-02-18 | Canadian Patents Dev | Method of preparing semiconductive materials |
| BE548227A (US06534493-20030318-C00166.png) * | 1955-07-22 | |||
| US2855334A (en) * | 1955-08-17 | 1958-10-07 | Sprague Electric Co | Method of preparing semiconducting crystals having symmetrical junctions |
| US2944975A (en) * | 1955-09-14 | 1960-07-12 | Siemens Ag | Method for producing and re-melting compounds having high vapor pressure at the meltig point |
| US2829994A (en) * | 1955-10-06 | 1958-04-08 | Hughes Aircraft Co | Method for preparing silicon-germanium alloys |
| US3046164A (en) * | 1955-10-18 | 1962-07-24 | Honeywell Regulator Co | Metal purification procedures |
| US2835614A (en) * | 1955-11-30 | 1958-05-20 | Raulaud Corp | Method of manufacturing crystalline material |
| US2809905A (en) * | 1955-12-20 | 1957-10-15 | Nat Res Dev | Melting and refining metals |
| US2809165A (en) * | 1956-03-15 | 1957-10-08 | Rca Corp | Semi-conductor materials |
| US2852420A (en) * | 1956-06-28 | 1958-09-16 | Rauland Corp | Method of manufacturing semiconductor crystals |
| NL98843C (US06534493-20030318-C00166.png) * | 1956-07-02 | |||
| US2979386A (en) * | 1956-08-02 | 1961-04-11 | Shockley William | Crystal growing apparatus |
| US2977256A (en) * | 1956-08-16 | 1961-03-28 | Gen Electric | Semiconductor devices and methods of making same |
| US2912321A (en) * | 1956-09-04 | 1959-11-10 | Helen E Brennan | Continuous casting and refining of material |
| BE560901A (US06534493-20030318-C00166.png) * | 1956-10-01 | |||
| NL104388C (US06534493-20030318-C00166.png) * | 1956-11-28 | |||
| US2990439A (en) * | 1956-12-18 | 1961-06-27 | Gen Electric Co Ltd | Thermocouples |
| US2932562A (en) * | 1956-12-27 | 1960-04-12 | Bell Telephone Labor Inc | Zone-melting with joule heat |
| NL114078C (US06534493-20030318-C00166.png) * | 1957-03-07 | 1900-01-01 | ||
| US2962363A (en) * | 1957-07-09 | 1960-11-29 | Pacific Semiconductors Inc | Crystal pulling apparatus and method |
| US2980560A (en) * | 1957-07-29 | 1961-04-18 | Rca Corp | Methods of making semiconductor devices |
| US2990257A (en) * | 1957-10-28 | 1961-06-27 | Fisher Scientific Co | Zone refiner |
| US2992903A (en) * | 1957-10-30 | 1961-07-18 | Imber Oscar | Apparatus for growing thin crystals |
| DE1092576B (de) * | 1957-11-15 | 1960-11-10 | Siemens Ag | Stromzufuehrung fuer die bewegliche Heizspule einer tiegelfreien Zonenziehvorrichtung im Innern eines Gefaesses |
| NL235481A (US06534493-20030318-C00166.png) * | 1958-02-19 | |||
| NL237383A (US06534493-20030318-C00166.png) * | 1958-04-23 | |||
| DE1164680B (de) * | 1958-05-21 | 1964-03-05 | Siemens Ag | Verfahren zum Herstellen von stabfoermigen Halbleiterkoerpern hoher Reinheit |
| US2974072A (en) * | 1958-06-27 | 1961-03-07 | Ibm | Semiconductor connection fabrication |
| US2967095A (en) * | 1958-07-25 | 1961-01-03 | Gen Electric | Method and apparatus for forming single crystal in cylindrical form |
| US3043725A (en) * | 1958-11-06 | 1962-07-10 | Texas Instruments Inc | Photo transistor |
| US3121630A (en) * | 1958-11-12 | 1964-02-18 | Heraeus Gmbh W C | Method and apparatus for sintering premolded objects |
| US2996374A (en) * | 1958-11-13 | 1961-08-15 | Texas Instruments Inc | Method of zone refining for impurities having segregation coefficients greater than unity |
| CH441508A (de) * | 1958-11-28 | 1968-01-15 | Siemens Ag | Halbleiteranordnung |
| DE1164681B (de) * | 1958-12-24 | 1964-03-05 | Siemens Ag | Verfahren zur Herstellung eines gleichmaessig dotierten Stabes aus Halbleitermaterial durch tiegelfreies Zonenschmelzen |
| NL98968C (US06534493-20030318-C00166.png) * | 1959-02-17 | |||
| US3031275A (en) * | 1959-02-20 | 1962-04-24 | Shockley William | Process for growing single crystals |
| DE1130414B (de) * | 1959-04-10 | 1962-05-30 | Elektronik M B H | Verfahren und Vorrichtung zum Ziehen von Einkristallen |
| DE1227874B (de) * | 1959-04-10 | 1966-11-03 | Itt Ind Ges Mit Beschraenkter | Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen |
| US3154381A (en) * | 1959-04-20 | 1964-10-27 | Haskiel R Shell | Progressive melting and crystallization of synthetic mica |
| NL112210C (US06534493-20030318-C00166.png) * | 1959-04-30 | |||
| US3036898A (en) * | 1959-04-30 | 1962-05-29 | Ibm | Semiconductor zone refining and crystal growth |
| DE1142153B (de) * | 1959-05-02 | 1963-01-10 | Wacker Chemie Gmbh | Verfahren zum tiegellosen Reinigen und Umkristallisieren von festen Stoffen |
| NL239785A (US06534493-20030318-C00166.png) * | 1959-06-02 | |||
| US3101257A (en) * | 1959-08-17 | 1963-08-20 | Lawrence M Hagen | Preparation of high purity silicon by decomposition of silicon nitride powder having a graphite target buried therein |
| NL244298A (US06534493-20030318-C00166.png) * | 1959-10-13 | |||
| US3072504A (en) * | 1959-10-20 | 1963-01-08 | Texas Instruments Inc | Junction growing technique |
| DE1207341B (de) * | 1960-06-11 | 1965-12-23 | Siemens Ag | Verfahren zum tiegelfreien Zonenschmelzen von Germanium- oder Siliciumstaeben |
| NL265975A (US06534493-20030318-C00166.png) * | 1960-06-15 | |||
| NL266156A (US06534493-20030318-C00166.png) * | 1960-06-24 | |||
| NL104013C (US06534493-20030318-C00166.png) * | 1960-06-28 | |||
| US3141849A (en) * | 1960-07-04 | 1964-07-21 | Wacker Chemie Gmbh | Process for doping materials |
| DE1205955B (de) * | 1960-11-30 | 1965-12-02 | Siemens Ag | Verfahren zum tiegelfreien Zonenschmelzen eines mit Phosphor dotierten Siliciumstabes im Vakuum |
| DE1156384B (de) * | 1960-12-23 | 1963-10-31 | Wacker Chemie Gmbh | Verfahren zum Dotieren von hochreinen Stoffen |
| DE1227424B (de) * | 1961-03-01 | 1966-10-27 | Philips Nv | Verfahren und Vorrichtung zum Zonenschmelzen eines aus einer Metallverbindung bestehenden stabfoermigen Koerpers |
| NL276635A (US06534493-20030318-C00166.png) * | 1961-03-31 | |||
| DE1419656B2 (de) * | 1961-05-16 | 1972-04-20 | Siemens AG, 1000 Berlin u 8000 München | Verfahren zum dotieren eines stabfoermigen koerpers aus halbleitermaterial, insbesondere aus silicium, mit bor |
| US3162526A (en) * | 1961-10-26 | 1964-12-22 | Grace W R & Co | Method of doping semiconductor materials |
| NL285816A (US06534493-20030318-C00166.png) * | 1962-01-26 | |||
| US3254955A (en) * | 1962-08-28 | 1966-06-07 | George R Bird | Method of preparing a tantalum carbide crystal |
| US3245761A (en) * | 1962-10-11 | 1966-04-12 | Norton Co | Apparatus for making magnesium oxide crystals |
| US3301660A (en) * | 1963-10-22 | 1967-01-31 | Dojindo & Co Ltd | Metal purification process |
| US3170882A (en) * | 1963-11-04 | 1965-02-23 | Merck & Co Inc | Process for making semiconductors of predetermined resistivities |
| DE1277828B (de) * | 1963-11-12 | 1968-09-19 | Fuji Electric Co Ltd | Verfahren zum Entfernen von unerwuenschten Verunreinigungen aus einem Halbleiterkoerpr |
| DE1276331B (de) * | 1963-11-21 | 1968-08-29 | Gen Electric | Verfahren zur Herstellung eines homogenen halbleitenden Einkristalls |
| US3249425A (en) * | 1964-08-17 | 1966-05-03 | Joseph R Mares | Process for freeze-refining a metal |
| FR1420509A (fr) * | 1964-10-27 | 1965-12-10 | Commissariat Energie Atomique | Procédé de fabrication d'alliage germanium-silicium |
| DE1519868B2 (de) * | 1965-03-18 | 1971-07-29 | Siemens AG, 1000 Berlin u 8000 München | Verfahren zum herstellen einer faserstruktur in einem koerper aus einer halbleitenden verbindung |
| DE1264399B (de) * | 1965-06-10 | 1968-03-28 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen |
| US3485613A (en) * | 1967-11-06 | 1969-12-23 | Corning Glass Works | Method of producing a vitreous body by crucibleless fluid zone treatment |
| DE2127968A1 (de) * | 1971-05-10 | 1972-11-16 | Aktiengesellschaft Brown, Boveri & Cie, Baden (Schweiz) | Verfahren und Einrichtung zur Beeinflussung der kristallinen Struktur von Legierungen sowie Anwendung dieses Verfahrens |
| SE372753B (US06534493-20030318-C00166.png) * | 1972-08-04 | 1975-01-13 | Boliden Ab | |
| US4029500A (en) * | 1975-03-11 | 1977-06-14 | Nasa | Method of growing composites of the type exhibiting the Soret effect |
| DE2607911A1 (de) * | 1976-02-26 | 1977-09-01 | Siemens Ag | Verfahren zur reinigung eines germaniumkoerpers |
| US4045181A (en) * | 1976-12-27 | 1977-08-30 | Monsanto Company | Apparatus for zone refining |
| US4170491A (en) * | 1978-12-07 | 1979-10-09 | General Electric Company | Near-surface thermal gradient enhancement with opaque coatings |
| US4257824A (en) * | 1979-07-31 | 1981-03-24 | Bell Telephone Laboratories, Incorporated | Photo-induced temperature gradient zone melting |
| JPS5697897A (en) * | 1980-01-07 | 1981-08-06 | Hitachi Ltd | Control rod |
| US4364778A (en) * | 1980-05-30 | 1982-12-21 | Bell Telephone Laboratories, Incorporated | Formation of multilayer dopant distributions in a semiconductor |
| US4394183A (en) * | 1981-11-18 | 1983-07-19 | Bell Telephone Laboratories, Incorporated | Solidification of molten materials |
| DE3311891A1 (de) * | 1983-03-31 | 1984-10-04 | Bayer Ag, 5090 Leverkusen | Bandfoermige folien aus metallen, verfahren und vorrichtung zu deren herstellung sowie ihre verwendung |
| US4900394A (en) * | 1985-08-22 | 1990-02-13 | Inco Alloys International, Inc. | Process for producing single crystals |
| US4690725A (en) * | 1985-11-22 | 1987-09-01 | Cominco Ltd. | Purification of Cd and Te by zone refining |
| JP3186096B2 (ja) * | 1990-06-14 | 2001-07-11 | アジレント・テクノロジーズ・インク | 感光素子アレイの製造方法 |
| CA2030483C (fr) * | 1990-11-21 | 2000-09-12 | Energie Atomique Du Canada | Methode de fabrication acceleree de fils ou rubans de ceramique supraconductrice |
| US6800137B2 (en) | 1995-06-16 | 2004-10-05 | Phoenix Scientific Corporation | Binary and ternary crystal purification and growth method and apparatus |
| US5993540A (en) * | 1995-06-16 | 1999-11-30 | Optoscint, Inc. | Continuous crystal plate growth process and apparatus |
| US6402840B1 (en) | 1999-08-10 | 2002-06-11 | Optoscint, Inc. | Crystal growth employing embedded purification chamber |
| DE102004028933B4 (de) * | 2004-06-15 | 2009-11-26 | Infineon Technologies Ag | Verfahren zur Herstellung einer vergrabenen metallischen Schicht in einem Halbleiterkörper und Halbleiterbauelement mit einer vergrabenen metallischen Schicht |
| WO2008026931A1 (en) * | 2006-08-30 | 2008-03-06 | Norsk Hydro Asa | Method and equipment for manufacturing multi-crystalline solar grade silicon from metallurgical silicon |
| JP6806199B1 (ja) * | 2019-08-08 | 2021-01-06 | Tdk株式会社 | 磁気抵抗効果素子およびホイスラー合金 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2567970A (en) * | 1947-12-24 | 1951-09-18 | Bell Telephone Labor Inc | Semiconductor comprising silicon and method of making it |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2631356A (en) * | 1953-03-17 | Method of making p-n junctions | ||
| DE375823C (de) * | 1921-07-14 | 1923-05-18 | Patra Patent Treuhand | Verfahren und Vorrichtung zur Umwandlung der Kristallstruktur von gezogenen Draehtenaus hoechstschmelzenden Metallen, z. B. Wolfram |
| US1826355A (en) * | 1923-01-12 | 1931-10-06 | Lincoln Electric Co | Arc-welding |
| US1738307A (en) * | 1927-04-11 | 1929-12-03 | Bell Telephone Labor Inc | Metallic element |
| US2125172A (en) * | 1932-07-29 | 1938-07-26 | Union Carbide & Carbon Corp | Process of treating the defective surface metal of billets or the like |
| US2576267A (en) * | 1948-10-27 | 1951-11-27 | Bell Telephone Labor Inc | Preparation of germanium rectifier material |
-
0
- NL NL6917760.A patent/NL168491B/xx unknown
- BE BE510303D patent/BE510303A/xx unknown
-
1951
- 1951-11-16 US US256791A patent/US2739088A/en not_active Expired - Lifetime
-
1952
- 1952-03-28 DE DEW8223A patent/DE1032555B/de active Pending
- 1952-03-28 DE DEW22927A patent/DE1135671B/de active Pending
- 1952-07-04 FR FR1065523D patent/FR1065523A/fr not_active Expired
- 1952-10-31 CH CH323989D patent/CH323989A/de unknown
- 1952-11-14 GB GB17944/55A patent/GB769674A/en not_active Expired
- 1952-11-14 GB GB28768/52A patent/GB769673A/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2567970A (en) * | 1947-12-24 | 1951-09-18 | Bell Telephone Labor Inc | Semiconductor comprising silicon and method of making it |
Also Published As
| Publication number | Publication date |
|---|---|
| CH323989A (de) | 1957-08-31 |
| FR1065523A (fr) | 1954-05-26 |
| US2739088A (en) | 1956-03-20 |
| DE1032555B (de) | 1958-06-19 |
| GB769674A (en) | 1957-03-13 |
| GB769673A (en) | 1957-03-13 |
| BE510303A (US06534493-20030318-C00166.png) | |
| NL168491B (US06534493-20030318-C00166.png) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1135671B (de) | Verfahren zum Herstellen eines pn-UEbergangs und/oder eines Gradienten eines elektrisch wirksamen Elements in einem Halbleiterkristall | |
| DE112015003573B4 (de) | Verfahren zum Steuern des spezifischen Widerstands und N-Silicium-Einkristall | |
| EP1739210B1 (de) | Verfahren zur Herstellung von dotierten Halbleiter-Einkristallen, und III-V-Halbleiter-Einkristall | |
| DE2639707C2 (de) | Verfahren zur Steuerung der Sauerstoffkonzentration beim Ziehen von Siliciumkristallen | |
| DE1063007B (de) | Verfahren zum Fortbewegen eines fest-fluessigen Grenzbereichs durch einen Koerper aus schmelzbarem Material zwecks Durchfuehrung einer gelenkten Diffusion | |
| DE2305019C3 (de) | Verfahren und Vorrichtung zum epitaktischen Aufwachsen von Halbleiterschichten mittels Flüssigphasen-Epitaxie | |
| DE2215355C3 (de) | Verfahren zum Abscheiden einkristalliner Halbleiterepitaxialschichten | |
| DE2450930A1 (de) | Thermische wanderung metallreicher fluessiger draehte durch halbleitermaterialien | |
| DE1282602B (de) | Verfahren zur Herstellung von eine oder mehrere Hohlkehlen aufweisenden Zwillingskristallen in einer Schmelze | |
| DE1166938B (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| EP4060098A1 (de) | Herstellungsverfahren für einen sic-volumeneinkristall inhomogener schraubenversetzungsverteilung und sic-substrat | |
| DE1298085B (de) | Verfahren zur Herstellung von Einkristallen hoher Kristallguete durch Zonenschmelzen | |
| DE2161072C3 (de) | Verfahren zur Herstellung eines Einkristalls aus einer Halbleiterverbindung und Schiffchen zur Durchführung dieses Verfahrens | |
| DE2425747C3 (de) | Verfahren zum Herstellen epitaktischer Schichten auf einem Substrat mittels Flüssigphasen-Epitaxie | |
| DE2346399A1 (de) | Verfahren zum zuechten von epitaxialschichten | |
| DE1260032B (de) | Verfahren zur Bildung einer gleichrichtenden Sperrschicht in einem Halbleiterscheibchen | |
| DE2450854A1 (de) | Verfahren zum herstellen von halbleiterelementen | |
| DE967930C (de) | Halbleiter mit P-N-Schicht und Verfahren zu seiner Herstellung | |
| DE1278413B (de) | Verfahren zum Ziehen duenner stabfoermiger Halbleiterkristalle aus einer Halbleiterschmelze | |
| DE1114592B (de) | Verfahren zur Herstellung von Halbleiteranordnungen mit einem Halbleiterkoerper und mindestens einer einlegierten, teilweise aus Aluminium bestehenden Elektrode | |
| AT203551B (de) | Verfahren zur Behandlung eines schmelzbaren, zumindest einen gelösten Stoff enthaltenden Materials | |
| DE2437895C2 (de) | Flüssigphasen-Epitaxieverfahren | |
| DE1219127B (de) | Verfahren zur Herstellung eines legierten PN-UEbergangs in einer Halbleiterscheibe | |
| DE2450896A1 (de) | Halbleitervorrichtungen und temperaturgradienten-zonenschmelzverfahren zur herstellung derselben | |
| DE112019003816T5 (de) | Verfahren zum Züchten eines Einkristalls |