FR1065523A - Procédé pour le contrôle de la ségrégation de solutés dans la méthode de fusion par zones - Google Patents

Procédé pour le contrôle de la ségrégation de solutés dans la méthode de fusion par zones

Info

Publication number
FR1065523A
FR1065523A FR1065523DA FR1065523A FR 1065523 A FR1065523 A FR 1065523A FR 1065523D A FR1065523D A FR 1065523DA FR 1065523 A FR1065523 A FR 1065523A
Authority
FR
France
Prior art keywords
solutes
segregation
controlling
zone fusion
fusion method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1065523A publication Critical patent/FR1065523A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/02—Other methods of shaping glass by casting molten glass, e.g. injection moulding
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/06—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in pot furnaces
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00—General methods of reducing to metals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
FR1065523D 1951-11-16 1952-07-04 Procédé pour le contrôle de la ségrégation de solutés dans la méthode de fusion par zones Expired FR1065523A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US256791A US2739088A (en) 1951-11-16 1951-11-16 Process for controlling solute segregation by zone-melting

Publications (1)

Publication Number Publication Date
FR1065523A true FR1065523A (fr) 1954-05-26

Family

ID=22973593

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1065523D Expired FR1065523A (fr) 1951-11-16 1952-07-04 Procédé pour le contrôle de la ségrégation de solutés dans la méthode de fusion par zones

Country Status (7)

Country Link
US (1) US2739088A (fr)
BE (1) BE510303A (fr)
CH (1) CH323989A (fr)
DE (2) DE1032555B (fr)
FR (1) FR1065523A (fr)
GB (2) GB769673A (fr)
NL (1) NL168491B (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2798018A (en) * 1952-09-29 1957-07-02 Carnegie Inst Of Technology Method of removing gaseous segregation from metals
US2817608A (en) * 1955-05-02 1957-12-24 Rca Corp Melt-quench method of making transistor devices
US2824030A (en) * 1955-07-21 1958-02-18 Canadian Patents Dev Method of preparing semiconductive materials
US2835612A (en) * 1954-08-23 1958-05-20 Motorola Inc Semiconductor purification process
US2845371A (en) * 1953-11-27 1958-07-29 Raytheon Mfg Co Process of producing junctions in semiconductors
US2950219A (en) * 1955-02-23 1960-08-23 Rauland Corp Method of manufacturing semiconductor crystals
DE1093016B (de) * 1956-10-01 1960-11-17 Hughes Aircraft Co Verfahren zur Herstellung von pn-UEbergaengen in Halbleiterkoerpern mittels Neuverteilung von Aktivatoren in einer Rekristallisationszone
US2964396A (en) * 1954-05-24 1960-12-13 Siemens Ag Producing semiconductor substances of highest purity
US3010857A (en) * 1954-03-01 1961-11-28 Rca Corp Semi-conductor devices and methods of making same
US3030194A (en) * 1953-02-14 1962-04-17 Siemens Ag Processing of semiconductor devices
US3060123A (en) * 1952-12-17 1962-10-23 Bell Telephone Labor Inc Method of processing semiconductive materials

Families Citing this family (121)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3125532A (en) * 1964-03-17 Method of doping semiconductor
NL180311B (nl) * 1952-08-01 Ciba Geigy Werkwijze voor het bereiden van n-halogeenacylanilinoalkaancarbonzuuresters alsmede werkwijze voor het bereiden van microbicide preparaten ter bestrijding van fytopathogene schimmels en bacterien op basis van dergelijke esters.
US3234009A (en) * 1953-02-14 1966-02-08 Siemens Ag Method and device for the successive zone melting and resolidifying of extremely pure substances
DE1056840B (de) * 1953-02-14 1959-05-06 Siemens Ag Verfahren zum Verteilen von Fremdstoffkomponenten in Halbleiterstaeben durch ein tiegelloses Zonenschmelzverfahren
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2836520A (en) * 1953-08-17 1958-05-27 Westinghouse Electric Corp Method of making junction transistors
BE531626A (fr) * 1953-09-04
US2933384A (en) * 1953-09-19 1960-04-19 Siemens Ag Method of melting compounds without decomposition
US2861017A (en) * 1953-09-30 1958-11-18 Honeywell Regulator Co Method of preparing semi-conductor devices
DE1301862B (de) * 1953-10-21 1969-08-28 Allg Elek Zitaets Ges Aeg Tele Verfahren zum Herstellen eines Drifttransistors
US2792317A (en) * 1954-01-28 1957-05-14 Westinghouse Electric Corp Method of producing multiple p-n junctions
DE1188042B (de) * 1954-01-29 1965-03-04 Siemens Ag Vorrichtung zum tiegellosen Zonenschmelzen eines stabfoermigen kristallinen Halbleiterkoerpers
DE1175447B (de) * 1954-01-29 1964-08-06 Licentia Gmbh Verfahren zur Herstellung von Halbleiter-kristallen durch tiegelfreies Zonenschmelzen
US2826666A (en) * 1954-02-15 1958-03-11 Tung Sol Electric Inc Improvement in apparatus for growing single crystals
DE1178611B (de) * 1954-02-20 1964-09-24 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
GB781795A (en) * 1954-03-12 1957-08-28 Gen Electric Improvements relating to the manufacture of p-n junction devices
NL111118C (fr) * 1954-04-01
DE1253235B (de) * 1954-05-25 1967-11-02 Siemens Ag Verfahren zum Herstellen stabfoermiger Halbleiterkristalle
GB797950A (en) * 1954-06-10 1958-07-09 Rca Corp Semi-conductor alloys
DE1184971B (de) * 1954-06-22 1965-01-07 Siemens Ag Verfahren zum tiegellosen Schmelzen von stabfoermigen Koerpern aus reinstem Halbleitermaterial
DE1215649B (de) * 1954-06-30 1966-05-05 Siemens Ag Verfahren zum Herstellen eines extrem reinen, stabfoermigen Halbleiterkristalls
DE1029803B (de) * 1954-09-18 1958-05-14 Siemens Ag Verfahren zur Herstellung einer Verbindung oder einer Legierung in kristalliner Form durch Zusammen-schmelzen der Komponenten in einem abgeschlossenen System
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
NL103256C (fr) * 1954-10-29
US2825549A (en) * 1954-12-28 1958-03-04 Itt Mold for semi-conductor ingots
GB831305A (en) * 1955-01-11 1960-03-30 Ass Elect Ind Improvements relating to the refining of heavy metals by zone melting
US2999776A (en) * 1955-01-13 1961-09-12 Siemens Ag Method of producing differentiated doping zones in semiconductor crystals
NL107344C (fr) * 1955-03-23
US2822308A (en) * 1955-03-29 1958-02-04 Gen Electric Semiconductor p-n junction units and method of making the same
US2907715A (en) * 1955-04-04 1959-10-06 Texas Instruments Inc Method for producing single-crystal semiconductor material
US2841509A (en) * 1955-04-27 1958-07-01 Rca Corp Method of doping semi-conductive material
US2931743A (en) * 1955-05-02 1960-04-05 Philco Corp Method of fusing metal body to another body
NL206424A (fr) * 1955-06-17
BE548227A (fr) * 1955-07-22
US2855334A (en) * 1955-08-17 1958-10-07 Sprague Electric Co Method of preparing semiconducting crystals having symmetrical junctions
US2944975A (en) * 1955-09-14 1960-07-12 Siemens Ag Method for producing and re-melting compounds having high vapor pressure at the meltig point
US2829994A (en) * 1955-10-06 1958-04-08 Hughes Aircraft Co Method for preparing silicon-germanium alloys
US3046164A (en) * 1955-10-18 1962-07-24 Honeywell Regulator Co Metal purification procedures
US2835614A (en) * 1955-11-30 1958-05-20 Raulaud Corp Method of manufacturing crystalline material
US2809905A (en) * 1955-12-20 1957-10-15 Nat Res Dev Melting and refining metals
US2809165A (en) * 1956-03-15 1957-10-08 Rca Corp Semi-conductor materials
US2852420A (en) * 1956-06-28 1958-09-16 Rauland Corp Method of manufacturing semiconductor crystals
NL98843C (fr) * 1956-07-02
US2979386A (en) * 1956-08-02 1961-04-11 Shockley William Crystal growing apparatus
US2977256A (en) * 1956-08-16 1961-03-28 Gen Electric Semiconductor devices and methods of making same
US2912321A (en) * 1956-09-04 1959-11-10 Helen E Brennan Continuous casting and refining of material
BE562704A (fr) * 1956-11-28
US2990439A (en) * 1956-12-18 1961-06-27 Gen Electric Co Ltd Thermocouples
US2932562A (en) * 1956-12-27 1960-04-12 Bell Telephone Labor Inc Zone-melting with joule heat
NL237042A (fr) * 1957-03-07 1900-01-01
US2962363A (en) * 1957-07-09 1960-11-29 Pacific Semiconductors Inc Crystal pulling apparatus and method
US2980560A (en) * 1957-07-29 1961-04-18 Rca Corp Methods of making semiconductor devices
US2990257A (en) * 1957-10-28 1961-06-27 Fisher Scientific Co Zone refiner
US2992903A (en) * 1957-10-30 1961-07-18 Imber Oscar Apparatus for growing thin crystals
DE1092576B (de) * 1957-11-15 1960-11-10 Siemens Ag Stromzufuehrung fuer die bewegliche Heizspule einer tiegelfreien Zonenziehvorrichtung im Innern eines Gefaesses
NL235481A (fr) * 1958-02-19
NL237383A (fr) * 1958-04-23
DE1164680B (de) * 1958-05-21 1964-03-05 Siemens Ag Verfahren zum Herstellen von stabfoermigen Halbleiterkoerpern hoher Reinheit
US2974072A (en) * 1958-06-27 1961-03-07 Ibm Semiconductor connection fabrication
US2967095A (en) * 1958-07-25 1961-01-03 Gen Electric Method and apparatus for forming single crystal in cylindrical form
US3043725A (en) * 1958-11-06 1962-07-10 Texas Instruments Inc Photo transistor
US3121630A (en) * 1958-11-12 1964-02-18 Heraeus Gmbh W C Method and apparatus for sintering premolded objects
US2996374A (en) * 1958-11-13 1961-08-15 Texas Instruments Inc Method of zone refining for impurities having segregation coefficients greater than unity
CH441507A (de) * 1958-11-28 1968-01-15 Siemens Ag Halbleitergerät mit einem Mischkristall als Halbleiterkörper
DE1164681B (de) * 1958-12-24 1964-03-05 Siemens Ag Verfahren zur Herstellung eines gleichmaessig dotierten Stabes aus Halbleitermaterial durch tiegelfreies Zonenschmelzen
NL236245A (fr) * 1959-02-17
US3031275A (en) * 1959-02-20 1962-04-24 Shockley William Process for growing single crystals
DE1227874B (de) * 1959-04-10 1966-11-03 Itt Ind Ges Mit Beschraenkter Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen
DE1130414B (de) * 1959-04-10 1962-05-30 Elektronik M B H Verfahren und Vorrichtung zum Ziehen von Einkristallen
US3154381A (en) * 1959-04-20 1964-10-27 Haskiel R Shell Progressive melting and crystallization of synthetic mica
US3036898A (en) * 1959-04-30 1962-05-29 Ibm Semiconductor zone refining and crystal growth
NL112210C (fr) * 1959-04-30
DE1142153B (de) * 1959-05-02 1963-01-10 Wacker Chemie Gmbh Verfahren zum tiegellosen Reinigen und Umkristallisieren von festen Stoffen
NL239785A (fr) * 1959-06-02
US3101257A (en) * 1959-08-17 1963-08-20 Lawrence M Hagen Preparation of high purity silicon by decomposition of silicon nitride powder having a graphite target buried therein
NL244298A (fr) * 1959-10-13
US3072504A (en) * 1959-10-20 1963-01-08 Texas Instruments Inc Junction growing technique
DE1207341B (de) * 1960-06-11 1965-12-23 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen von Germanium- oder Siliciumstaeben
BE605031A (fr) * 1960-06-15
NL266156A (fr) * 1960-06-24
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US3141849A (en) * 1960-07-04 1964-07-21 Wacker Chemie Gmbh Process for doping materials
DE1205955B (de) * 1960-11-30 1965-12-02 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines mit Phosphor dotierten Siliciumstabes im Vakuum
DE1156384B (de) * 1960-12-23 1963-10-31 Wacker Chemie Gmbh Verfahren zum Dotieren von hochreinen Stoffen
DE1227424B (de) * 1961-03-01 1966-10-27 Philips Nv Verfahren und Vorrichtung zum Zonenschmelzen eines aus einer Metallverbindung bestehenden stabfoermigen Koerpers
NL276635A (fr) * 1961-03-31
DE1419656B2 (de) * 1961-05-16 1972-04-20 Siemens AG, 1000 Berlin u 8000 München Verfahren zum dotieren eines stabfoermigen koerpers aus halbleitermaterial, insbesondere aus silicium, mit bor
US3162526A (en) * 1961-10-26 1964-12-22 Grace W R & Co Method of doping semiconductor materials
NL285816A (fr) * 1962-01-26
US3254955A (en) * 1962-08-28 1966-06-07 George R Bird Method of preparing a tantalum carbide crystal
US3245761A (en) * 1962-10-11 1966-04-12 Norton Co Apparatus for making magnesium oxide crystals
US3301660A (en) * 1963-10-22 1967-01-31 Dojindo & Co Ltd Metal purification process
US3170882A (en) * 1963-11-04 1965-02-23 Merck & Co Inc Process for making semiconductors of predetermined resistivities
DE1277828B (de) * 1963-11-12 1968-09-19 Fuji Electric Co Ltd Verfahren zum Entfernen von unerwuenschten Verunreinigungen aus einem Halbleiterkoerpr
DE1276331B (de) * 1963-11-21 1968-08-29 Gen Electric Verfahren zur Herstellung eines homogenen halbleitenden Einkristalls
US3249425A (en) * 1964-08-17 1966-05-03 Joseph R Mares Process for freeze-refining a metal
FR1420509A (fr) * 1964-10-27 1965-12-10 Commissariat Energie Atomique Procédé de fabrication d'alliage germanium-silicium
DE1519868B2 (de) * 1965-03-18 1971-07-29 Siemens AG, 1000 Berlin u 8000 München Verfahren zum herstellen einer faserstruktur in einem koerper aus einer halbleitenden verbindung
DE1264399B (de) * 1965-06-10 1968-03-28 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
US3485613A (en) * 1967-11-06 1969-12-23 Corning Glass Works Method of producing a vitreous body by crucibleless fluid zone treatment
DE2127968A1 (de) * 1971-05-10 1972-11-16 Aktiengesellschaft Brown, Boveri & Cie, Baden (Schweiz) Verfahren und Einrichtung zur Beeinflussung der kristallinen Struktur von Legierungen sowie Anwendung dieses Verfahrens
SE372753B (fr) * 1972-08-04 1975-01-13 Boliden Ab
US4029500A (en) * 1975-03-11 1977-06-14 Nasa Method of growing composites of the type exhibiting the Soret effect
DE2607911A1 (de) * 1976-02-26 1977-09-01 Siemens Ag Verfahren zur reinigung eines germaniumkoerpers
US4045181A (en) * 1976-12-27 1977-08-30 Monsanto Company Apparatus for zone refining
US4170491A (en) * 1978-12-07 1979-10-09 General Electric Company Near-surface thermal gradient enhancement with opaque coatings
US4257824A (en) * 1979-07-31 1981-03-24 Bell Telephone Laboratories, Incorporated Photo-induced temperature gradient zone melting
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US4394183A (en) * 1981-11-18 1983-07-19 Bell Telephone Laboratories, Incorporated Solidification of molten materials
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US4900394A (en) * 1985-08-22 1990-02-13 Inco Alloys International, Inc. Process for producing single crystals
US4690725A (en) * 1985-11-22 1987-09-01 Cominco Ltd. Purification of Cd and Te by zone refining
JP3186096B2 (ja) * 1990-06-14 2001-07-11 アジレント・テクノロジーズ・インク 感光素子アレイの製造方法
CA2030483C (fr) * 1990-11-21 2000-09-12 Energie Atomique Du Canada Methode de fabrication acceleree de fils ou rubans de ceramique supraconductrice
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
US6402840B1 (en) 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber
DE102004063959B4 (de) * 2004-06-15 2010-06-02 Infineon Technologies Ag Verfahren zur Herstellung einer niederohmigen Anschlusselektrode als vergrabene metallische Schicht in einem Halbleiterkörper für ein Halbleiterbauelement
WO2008026931A1 (fr) * 2006-08-30 2008-03-06 Norsk Hydro Asa Procédé et équipement pour la fabrication d'un silicium multicristallin de grade solaire à partir de silicium métallurgique
JP6806199B1 (ja) * 2019-08-08 2021-01-06 Tdk株式会社 磁気抵抗効果素子およびホイスラー合金

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US2631356A (en) * 1953-03-17 Method of making p-n junctions
DE375823C (de) * 1921-07-14 1923-05-18 Patra Patent Treuhand Verfahren und Vorrichtung zur Umwandlung der Kristallstruktur von gezogenen Draehtenaus hoechstschmelzenden Metallen, z. B. Wolfram
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US2125172A (en) * 1932-07-29 1938-07-26 Union Carbide & Carbon Corp Process of treating the defective surface metal of billets or the like
US2567970A (en) * 1947-12-24 1951-09-18 Bell Telephone Labor Inc Semiconductor comprising silicon and method of making it
US2576267A (en) * 1948-10-27 1951-11-27 Bell Telephone Labor Inc Preparation of germanium rectifier material

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2798018A (en) * 1952-09-29 1957-07-02 Carnegie Inst Of Technology Method of removing gaseous segregation from metals
US3060123A (en) * 1952-12-17 1962-10-23 Bell Telephone Labor Inc Method of processing semiconductive materials
US3030194A (en) * 1953-02-14 1962-04-17 Siemens Ag Processing of semiconductor devices
US3086856A (en) * 1953-02-14 1963-04-23 Siemens Ag Method and device for the successive zone melting and resolidifying of extremely pure substances
US2845371A (en) * 1953-11-27 1958-07-29 Raytheon Mfg Co Process of producing junctions in semiconductors
US3010857A (en) * 1954-03-01 1961-11-28 Rca Corp Semi-conductor devices and methods of making same
US2964396A (en) * 1954-05-24 1960-12-13 Siemens Ag Producing semiconductor substances of highest purity
US2835612A (en) * 1954-08-23 1958-05-20 Motorola Inc Semiconductor purification process
US2950219A (en) * 1955-02-23 1960-08-23 Rauland Corp Method of manufacturing semiconductor crystals
US2817608A (en) * 1955-05-02 1957-12-24 Rca Corp Melt-quench method of making transistor devices
US2824030A (en) * 1955-07-21 1958-02-18 Canadian Patents Dev Method of preparing semiconductive materials
DE1093016B (de) * 1956-10-01 1960-11-17 Hughes Aircraft Co Verfahren zur Herstellung von pn-UEbergaengen in Halbleiterkoerpern mittels Neuverteilung von Aktivatoren in einer Rekristallisationszone

Also Published As

Publication number Publication date
DE1032555B (de) 1958-06-19
US2739088A (en) 1956-03-20
GB769673A (en) 1957-03-13
DE1135671B (de) 1962-08-30
NL168491B (fr)
BE510303A (fr)
CH323989A (de) 1957-08-31
GB769674A (en) 1957-03-13

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