CH441507A - Halbleitergerät mit einem Mischkristall als Halbleiterkörper - Google Patents

Halbleitergerät mit einem Mischkristall als Halbleiterkörper

Info

Publication number
CH441507A
CH441507A CH7995559A CH441507DA CH441507A CH 441507 A CH441507 A CH 441507A CH 7995559 A CH7995559 A CH 7995559A CH 441507D A CH441507D A CH 441507DA CH 441507 A CH441507 A CH 441507A
Authority
CH
Switzerland
Prior art keywords
mixed crystal
semiconductor
semiconductor device
semiconductor body
crystal
Prior art date
Application number
CH7995559A
Other languages
English (en)
Inventor
Folberth Otto Gert D Dipl-Phys
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of CH441507A publication Critical patent/CH441507A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Glass Compositions (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Conductive Materials (AREA)
CH7995559A 1958-11-28 Halbleitergerät mit einem Mischkristall als Halbleiterkörper CH441507A (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES60756A DE1121225B (de) 1958-11-28 1958-11-28 Halbleiteranordnung und Verfahren zu ihrer Herstellung
DES64465A DE1121736B (de) 1958-11-28 1959-08-17 Halbleiteranordnung
DES0075092 1961-07-29
DES0075091 1961-07-29

Publications (1)

Publication Number Publication Date
CH441507A true CH441507A (de) 1968-01-15

Family

ID=27437499

Family Applications (3)

Application Number Title Priority Date Filing Date
CH7995559A CH441507A (de) 1958-11-28 Halbleitergerät mit einem Mischkristall als Halbleiterkörper
CH566462A CH441508A (de) 1958-11-28 Halbleiteranordnung
CH7968359A CH411136A (de) 1958-11-28 1959-10-21 Halbleitergerät und Verfahren zur Herstellung desselben

Family Applications After (2)

Application Number Title Priority Date Filing Date
CH566462A CH441508A (de) 1958-11-28 Halbleiteranordnung
CH7968359A CH411136A (de) 1958-11-28 1959-10-21 Halbleitergerät und Verfahren zur Herstellung desselben

Country Status (6)

Country Link
US (3) US3140998A (de)
CH (3) CH411136A (de)
DE (4) DE1121225B (de)
FR (2) FR1238050A (de)
GB (3) GB933211A (de)
NL (3) NL245568A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303005A (en) * 1962-12-03 1967-02-07 Ibm Ternary semiconductor compounds and method of preparation
US3485757A (en) * 1964-11-23 1969-12-23 Atomic Energy Commission Thermoelectric composition comprising doped bismuth telluride,silicon and boron
US3945855A (en) * 1965-11-24 1976-03-23 Teledyne, Inc. Thermoelectric device including an alloy of GeTe and AgSbTe as the P-type element
US3460996A (en) * 1968-04-02 1969-08-12 Rca Corp Thermoelectric lead telluride base compositions and devices utilizing them
SU519042A1 (ru) * 1974-05-21 1978-07-25 Предприятие П/Я М-5273 Фотоэлектрический эмиттер
US4447277A (en) * 1982-01-22 1984-05-08 Energy Conversion Devices, Inc. Multiphase thermoelectric alloys and method of making same
US6312617B1 (en) * 1998-10-13 2001-11-06 Board Of Trustees Operating Michigan State University Conductive isostructural compounds
US8481843B2 (en) * 2003-09-12 2013-07-09 Board Of Trustees Operating Michigan State University Silver-containing p-type semiconductor
CA2538522C (en) * 2003-09-12 2014-01-07 Board Of Trustees Operating Michigan State University Silver-containing thermoelectric compounds
CN111710775A (zh) * 2020-07-22 2020-09-25 中国科学院宁波材料技术与工程研究所 一种硒化锡基热电材料、其制备方法及应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE510303A (de) * 1951-11-16
FR1129505A (fr) * 1954-04-01 1957-01-22 Philips Nv Procédé de fabrication de corps semi-conducteurs
US2858275A (en) * 1954-12-23 1958-10-28 Siemens Ag Mixed-crystal semiconductor devices
AT194489B (de) * 1954-12-23 1958-01-10 Siemens Ag Halbleitergerät
DE1044980B (de) * 1955-11-14 1958-11-27 Siemens Ag Halbleiteranordnung mit mehreren Elektroden und Verfahren zu ihrer Herstellung
US2882195A (en) * 1957-05-10 1959-04-14 Bell Telephone Labor Inc Semiconducting materials and devices made therefrom
US2882468A (en) * 1957-05-10 1959-04-14 Bell Telephone Labor Inc Semiconducting materials and devices made therefrom

Also Published As

Publication number Publication date
US3211656A (en) 1965-10-12
GB974601A (en) 1964-11-04
DE1121225B (de) 1962-01-04
US3211655A (en) 1965-10-12
GB933212A (en) 1963-08-08
CH411136A (de) 1966-04-15
CH441508A (de) 1968-01-15
NL245568A (de)
FR1238050A (fr) 1960-08-05
FR76972E (fr) 1961-12-29
NL280217A (de)
DE1414631A1 (de) 1969-01-23
DE1414631B2 (de) 1971-07-22
DE1121736B (de) 1962-01-11
NL245969A (de)
DE1414632A1 (de) 1969-02-27
GB933211A (en) 1963-08-08
US3140998A (en) 1964-07-14

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