FR76972E - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number
FR76972E
FR76972E FR808852A FR76972DA FR76972E FR 76972 E FR76972 E FR 76972E FR 808852 A FR808852 A FR 808852A FR 76972D A FR76972D A FR 76972DA FR 76972 E FR76972 E FR 76972E
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR808852A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR76972E publication Critical patent/FR76972E/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Conductive Materials (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Glass Compositions (AREA)
FR808852A 1958-11-28 1959-10-29 Dispositif semi-conducteur Expired FR76972E (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES60756A DE1121225B (de) 1958-11-28 1958-11-28 Halbleiteranordnung und Verfahren zu ihrer Herstellung
DES64465A DE1121736B (de) 1958-11-28 1959-08-17 Halbleiteranordnung
DES0075091 1961-07-29
DES0075092 1961-07-29

Publications (1)

Publication Number Publication Date
FR76972E true FR76972E (fr) 1961-12-29

Family

ID=27437499

Family Applications (2)

Application Number Title Priority Date Filing Date
FR806955A Expired FR1238050A (fr) 1958-11-28 1959-10-07 Dispositif semiconducteur
FR808852A Expired FR76972E (fr) 1958-11-28 1959-10-29 Dispositif semi-conducteur

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR806955A Expired FR1238050A (fr) 1958-11-28 1959-10-07 Dispositif semiconducteur

Country Status (6)

Country Link
US (3) US3140998A (fr)
CH (3) CH411136A (fr)
DE (4) DE1121225B (fr)
FR (2) FR1238050A (fr)
GB (3) GB933211A (fr)
NL (3) NL245568A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303005A (en) * 1962-12-03 1967-02-07 Ibm Ternary semiconductor compounds and method of preparation
US3485757A (en) * 1964-11-23 1969-12-23 Atomic Energy Commission Thermoelectric composition comprising doped bismuth telluride,silicon and boron
US3945855A (en) * 1965-11-24 1976-03-23 Teledyne, Inc. Thermoelectric device including an alloy of GeTe and AgSbTe as the P-type element
US3460996A (en) * 1968-04-02 1969-08-12 Rca Corp Thermoelectric lead telluride base compositions and devices utilizing them
SU519042A1 (ru) * 1974-05-21 1978-07-25 Предприятие П/Я М-5273 Фотоэлектрический эмиттер
US4447277A (en) * 1982-01-22 1984-05-08 Energy Conversion Devices, Inc. Multiphase thermoelectric alloys and method of making same
US6312617B1 (en) * 1998-10-13 2001-11-06 Board Of Trustees Operating Michigan State University Conductive isostructural compounds
US8481843B2 (en) * 2003-09-12 2013-07-09 Board Of Trustees Operating Michigan State University Silver-containing p-type semiconductor
CN100452466C (zh) * 2003-09-12 2009-01-14 密歇根州州立大学托管委员会 热电材料及其制备方法、热电元件以及从热能生成电流的方法
CN111710775A (zh) * 2020-07-22 2020-09-25 中国科学院宁波材料技术与工程研究所 一种硒化锡基热电材料、其制备方法及应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE510303A (fr) * 1951-11-16
FR1129505A (fr) * 1954-04-01 1957-01-22 Philips Nv Procédé de fabrication de corps semi-conducteurs
AT194489B (de) * 1954-12-23 1958-01-10 Siemens Ag Halbleitergerät
US2858275A (en) * 1954-12-23 1958-10-28 Siemens Ag Mixed-crystal semiconductor devices
DE1044980B (de) * 1955-11-14 1958-11-27 Siemens Ag Halbleiteranordnung mit mehreren Elektroden und Verfahren zu ihrer Herstellung
US2882468A (en) * 1957-05-10 1959-04-14 Bell Telephone Labor Inc Semiconducting materials and devices made therefrom
US2882195A (en) * 1957-05-10 1959-04-14 Bell Telephone Labor Inc Semiconducting materials and devices made therefrom

Also Published As

Publication number Publication date
GB974601A (en) 1964-11-04
NL245969A (fr)
DE1414632A1 (de) 1969-02-27
CH441508A (de) 1968-01-15
CH441507A (de) 1968-01-15
GB933212A (en) 1963-08-08
NL245568A (fr)
CH411136A (de) 1966-04-15
US3211655A (en) 1965-10-12
FR1238050A (fr) 1960-08-05
DE1121225B (de) 1962-01-04
US3211656A (en) 1965-10-12
DE1414631B2 (de) 1971-07-22
US3140998A (en) 1964-07-14
DE1414631A1 (de) 1969-01-23
NL280217A (fr)
DE1121736B (de) 1962-01-11
GB933211A (en) 1963-08-08

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