FR1224541A - Perfectionnement au dispositif semi-conducteur - Google Patents
Perfectionnement au dispositif semi-conducteurInfo
- Publication number
- FR1224541A FR1224541A FR794749A FR794749A FR1224541A FR 1224541 A FR1224541 A FR 1224541A FR 794749 A FR794749 A FR 794749A FR 794749 A FR794749 A FR 794749A FR 1224541 A FR1224541 A FR 1224541A
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- device development
- development
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US735402A US2958022A (en) | 1958-05-15 | 1958-05-15 | Asymmetrically conductive device |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1224541A true FR1224541A (fr) | 1960-06-24 |
Family
ID=24955637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR794749A Expired FR1224541A (fr) | 1958-05-15 | 1959-05-15 | Perfectionnement au dispositif semi-conducteur |
Country Status (4)
Country | Link |
---|---|
US (1) | US2958022A (fr) |
BE (1) | BE578691A (fr) |
FR (1) | FR1224541A (fr) |
GB (1) | GB902425A (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3091703A (en) * | 1959-04-08 | 1963-05-28 | Raytheon Co | Semiconductor devices utilizing carrier injection into a space charge region |
US3187193A (en) * | 1959-10-15 | 1965-06-01 | Rca Corp | Multi-junction negative resistance semiconducting devices |
US3151006A (en) * | 1960-02-12 | 1964-09-29 | Siemens Ag | Use of a highly pure semiconductor carrier material in a vapor deposition process |
US3192398A (en) * | 1961-07-31 | 1965-06-29 | Merck & Co Inc | Composite semiconductor delay line device |
US3158754A (en) * | 1961-10-05 | 1964-11-24 | Ibm | Double injection semiconductor device |
BE624959A (fr) * | 1961-11-20 | |||
US3374124A (en) * | 1965-01-07 | 1968-03-19 | Ca Atomic Energy Ltd | Method of making lithium-drift diodes by diffusion |
-
1958
- 1958-05-15 US US735402A patent/US2958022A/en not_active Expired - Lifetime
-
1959
- 1959-05-13 GB GB16426/59A patent/GB902425A/en not_active Expired
- 1959-05-14 BE BE578691A patent/BE578691A/fr unknown
- 1959-05-15 FR FR794749A patent/FR1224541A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
BE578691A (fr) | 1959-08-31 |
US2958022A (en) | 1960-10-25 |
GB902425A (en) | 1962-08-01 |
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