BE578691A - Dispositif à conduction asymétrique. - Google Patents

Dispositif à conduction asymétrique.

Info

Publication number
BE578691A
BE578691A BE578691A BE578691A BE578691A BE 578691 A BE578691 A BE 578691A BE 578691 A BE578691 A BE 578691A BE 578691 A BE578691 A BE 578691A BE 578691 A BE578691 A BE 578691A
Authority
BE
Belgium
Prior art keywords
conduction device
asymmetric conduction
asymmetric
conduction
Prior art date
Application number
BE578691A
Other languages
English (en)
Inventor
E M Pell
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of BE578691A publication Critical patent/BE578691A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
BE578691A 1958-05-15 1959-05-14 Dispositif à conduction asymétrique. BE578691A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US735402A US2958022A (en) 1958-05-15 1958-05-15 Asymmetrically conductive device

Publications (1)

Publication Number Publication Date
BE578691A true BE578691A (fr) 1959-08-31

Family

ID=24955637

Family Applications (1)

Application Number Title Priority Date Filing Date
BE578691A BE578691A (fr) 1958-05-15 1959-05-14 Dispositif à conduction asymétrique.

Country Status (4)

Country Link
US (1) US2958022A (fr)
BE (1) BE578691A (fr)
FR (1) FR1224541A (fr)
GB (1) GB902425A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3091703A (en) * 1959-04-08 1963-05-28 Raytheon Co Semiconductor devices utilizing carrier injection into a space charge region
US3187193A (en) * 1959-10-15 1965-06-01 Rca Corp Multi-junction negative resistance semiconducting devices
US3151006A (en) * 1960-02-12 1964-09-29 Siemens Ag Use of a highly pure semiconductor carrier material in a vapor deposition process
US3192398A (en) * 1961-07-31 1965-06-29 Merck & Co Inc Composite semiconductor delay line device
US3158754A (en) * 1961-10-05 1964-11-24 Ibm Double injection semiconductor device
BE624959A (fr) * 1961-11-20
US3374124A (en) * 1965-01-07 1968-03-19 Ca Atomic Energy Ltd Method of making lithium-drift diodes by diffusion

Also Published As

Publication number Publication date
US2958022A (en) 1960-10-25
GB902425A (en) 1962-08-01
FR1224541A (fr) 1960-06-24

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