NL98843C - - Google Patents

Info

Publication number: NL98843C
Authority: NL; Netherlands

Application number

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1956-07-02

Publication of NL98843C publication Critical patent/NL98843C/xx

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Organic Chemistry (AREA)
Metallurgy (AREA)
Materials Engineering (AREA)
Crystallography & Structural Chemistry (AREA)
General Physics & Mathematics (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

NL98843D 1956-07-02 NL98843C (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US595503A US2904512A (en)	1956-07-02	1956-07-02	Growth of uniform composition semiconductor crystals

Publications (1)

Publication Number	Publication Date
NL98843C true NL98843C (fr)

Family

ID=24383491

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
NL98843D NL98843C (fr)	1956-07-02
NL218610D NL218610A (fr)	1956-07-02

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
NL218610D NL218610A (fr)	1956-07-02

Country Status (5)

Country	Link
US (1)	US2904512A (fr)
DE (1)	DE1034772B (fr)
FR (1)	FR1180064A (fr)
GB (1)	GB839783A (fr)
NL (2)	NL218610A (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2998335A (en) *	1956-02-04	1961-08-29	Telefunken Gmbh	Method and apparatusfor growing single crystals from molten bodies
US2981687A (en) *	1958-04-03	1961-04-25	British Thomson Houston Co Ltd	Production of mono-crystal semiconductor bodies
DE1194158B (de) *	1958-10-04	1965-06-03	Telefunken Patent	Verfahren und Vorrichtung zur Herstellung eines Halbleiterkristalls, insbesondere aus Germanium, mit hoher Versetzungsdichte
NL246541A (fr) *	1959-01-20
GB898872A (en) *	1959-08-14	1962-06-14	Ici Ltd	Improvements in the manufacture of crystalline silicon
US3088853A (en) *	1959-11-17	1963-05-07	Texas Instruments Inc	Method of purifying gallium by recrystallization
NL258297A (fr) *	1959-12-03
US3058915A (en) *	1960-01-18	1962-10-16	Westinghouse Electric Corp	Crystal growing process
US3390020A (en) *	1964-03-17	1968-06-25	Mandelkorn Joseph	Semiconductor material and method of making same
US3404966A (en) *	1964-09-04	1968-10-08	Northeru Electric Company Ltd	Melting a ferrous ion containing ferrimagnetic oxide in a ferric ion crucible
DE1519867A1 (de) *	1965-02-27	1970-02-26	Siemens Ag	Vorrichtung zum Zonenschmelzen im Vakuum
FR1473984A (fr) *	1966-01-10	1967-03-24	Radiotechnique Coprim Rtc	Procédé et dispositif destinés à la fabrication de composés binaires monocristallins
US3452549A (en) *	1966-03-28	1969-07-01	Us Army	Method for producing predetermined crystal structures
US3929557A (en) *	1973-06-11	1975-12-30	Us Air Force	Periodically and alternately accelerating and decelerating rotation rate of a feed crystal
DE2338338C3 (de) *	1973-07-27	1979-04-12	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen eines Halbleiterkristallstabes
JPS5347765A (en) *	1976-10-13	1978-04-28	Matsushita Electric Ind Co Ltd	Semiconductor crystal growth method
US4045181A (en) *	1976-12-27	1977-08-30	Monsanto Company	Apparatus for zone refining
US4270973A (en) *	1978-04-27	1981-06-02	Honeywell Inc.	Growth of thallium-doped silicon from a tin-thallium solution
DE3437524A1 (de) *	1984-10-12	1986-04-17	Siemens AG, 1000 Berlin und 8000 München	Verfahren zum herstellen eines mit indium oder wismut dotierten silicium-halbleiterstabes
US5363796A (en) *	1991-02-20	1994-11-15	Sumitomo Metal Industries, Ltd.	Apparatus and method of growing single crystal
JPH0680495A (ja) *	1992-06-16	1994-03-22	Sumitomo Metal Ind Ltd	結晶成長方法
JPH06279170A (ja) *	1993-03-29	1994-10-04	Sumitomo Sitix Corp	単結晶の製造方法及びその装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2631356A (en) *		1953-03-17		Method of making p-n junctions
NL88324C (fr) *	1950-06-15
BE510303A (fr) *	1951-11-16
US2747971A (en) *	1953-07-20	1956-05-29	Westinghouse Electric Corp	Preparation of pure crystalline silicon

0
- NL NL98843D patent/NL98843C/xx active
- NL NL218610D patent/NL218610A/xx unknown
1956
- 1956-07-02 US US595503A patent/US2904512A/en not_active Expired - Lifetime
1957
- 1957-07-01 DE DEG22436A patent/DE1034772B/de active Pending
- 1957-07-01 GB GB20666/57A patent/GB839783A/en not_active Expired
- 1957-07-02 FR FR1180064D patent/FR1180064A/fr not_active Expired

Also Published As

Publication number	Publication date
DE1034772B (de)	1958-07-24
FR1180064A (fr)	1959-06-01
GB839783A (en)	1960-06-29
US2904512A (en)	1959-09-15
NL218610A (fr)

Publication	Publication Date	Title
AT197311B (fr)	1958-04-25
AT202855B (fr)	1959-04-10
AT216255B (fr)	1961-07-25
AT199361B (fr)	1958-08-25
AT202354B (fr)	1959-03-10
AT198114B (fr)	1958-06-10
AT201309B (fr)	1958-12-27
AT202279B (fr)	1959-02-25
AT213780B (fr)	1961-02-27
AT194202B (fr)	1957-12-27
AT195843B (fr)	1958-02-25
AT196732B (fr)	1958-03-25
AT197702B (fr)	1958-05-27
AT196778B (fr)	1958-03-25
AT195164B (fr)	1958-01-25
AT197107B (fr)	1958-04-10
AT197110B (fr)	1958-04-10
AT196779B (fr)	1958-03-25
AT213767B (fr)	1961-02-27
AT198038B (fr)	1958-06-10
AT198039B (fr)	1958-06-10
AT198051B (fr)	1958-06-10
AT196060B (fr)	1958-02-25
AT198347B (fr)	1958-06-25
AT198677B (fr)	1958-07-25