FR1473984A - Procédé et dispositif destinés à la fabrication de composés binaires monocristallins - Google Patents
Procédé et dispositif destinés à la fabrication de composés binaires monocristallinsInfo
- Publication number
- FR1473984A FR1473984A FR45372A FR45372A FR1473984A FR 1473984 A FR1473984 A FR 1473984A FR 45372 A FR45372 A FR 45372A FR 45372 A FR45372 A FR 45372A FR 1473984 A FR1473984 A FR 1473984A
- Authority
- FR
- France
- Prior art keywords
- production
- binary compounds
- monocrystalline
- monocrystalline binary
- compounds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/971—Stoichiometric control of host substrate composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR45372A FR1473984A (fr) | 1966-01-10 | 1966-01-10 | Procédé et dispositif destinés à la fabrication de composés binaires monocristallins |
US600124A US3507625A (en) | 1966-01-10 | 1966-12-08 | Apparatus for producing binary crystalline compounds |
NL6700098A NL6700098A (fr) | 1966-01-10 | 1967-01-04 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR45372A FR1473984A (fr) | 1966-01-10 | 1966-01-10 | Procédé et dispositif destinés à la fabrication de composés binaires monocristallins |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1473984A true FR1473984A (fr) | 1967-03-24 |
Family
ID=8598225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR45372A Expired FR1473984A (fr) | 1966-01-10 | 1966-01-10 | Procédé et dispositif destinés à la fabrication de composés binaires monocristallins |
Country Status (3)
Country | Link |
---|---|
US (1) | US3507625A (fr) |
FR (1) | FR1473984A (fr) |
NL (1) | NL6700098A (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4040894A (en) * | 1967-06-13 | 1977-08-09 | Huguette Fumeron Rodot | Process of preparing crystals of compounds and alloys |
US3665888A (en) * | 1970-03-16 | 1972-05-30 | Bell Telephone Labor Inc | Horizontal liquid phase crystal growth apparatus |
GB1366532A (en) * | 1971-04-21 | 1974-09-11 | Nat Res Dev | Apparatus for the preparation and growth of crystalline material |
BE795938A (fr) * | 1972-03-01 | 1973-08-27 | Siemens Ag | Procede de fabrication d'une barre d'arseniure de gallium monocristalline exempte de dislocation |
FR2175595B1 (fr) * | 1972-03-15 | 1974-09-13 | Radiotechnique Compelec | |
US3902860A (en) * | 1972-09-28 | 1975-09-02 | Sumitomo Electric Industries | Thermal treatment of semiconducting compounds having one or more volatile components |
US4036595A (en) * | 1975-11-06 | 1977-07-19 | Siltec Corporation | Continuous crystal growing furnace |
US4239583A (en) * | 1979-06-07 | 1980-12-16 | Mobil Tyco Solar Energy Corporation | Method and apparatus for crystal growth control |
US4282184A (en) * | 1979-10-09 | 1981-08-04 | Siltec Corporation | Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace |
US4454096A (en) * | 1981-06-15 | 1984-06-12 | Siltec Corporation | Crystal growth furnace recharge |
JPS6041639B2 (ja) * | 1982-07-08 | 1985-09-18 | 財団法人 半導体研究振興会 | GaAs単結晶引き上げ装置 |
EP0221051A1 (fr) * | 1985-04-16 | 1987-05-13 | Energy Materials Corporation | Procede et appareil pour la croissance de monocristaux |
JPH10158088A (ja) * | 1996-11-25 | 1998-06-16 | Ebara Corp | 固体材料の製造方法及びその製造装置 |
US8652257B2 (en) | 2010-02-22 | 2014-02-18 | Lev George Eidelman | Controlled gravity feeding czochralski apparatus with on the way melting raw material |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL218610A (fr) * | 1956-07-02 | |||
DE1188555B (de) * | 1960-05-10 | 1965-03-11 | Wacker Chemie Gmbh | Verfahren zur Herstellung hochreiner kristalliner Koerper aus Nitriden, Phosphiden oder Arseniden der III. Hauptgruppe des Periodensystems |
-
1966
- 1966-01-10 FR FR45372A patent/FR1473984A/fr not_active Expired
- 1966-12-08 US US600124A patent/US3507625A/en not_active Expired - Lifetime
-
1967
- 1967-01-04 NL NL6700098A patent/NL6700098A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
NL6700098A (fr) | 1967-07-11 |
US3507625A (en) | 1970-04-21 |
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