FR1473984A - Procédé et dispositif destinés à la fabrication de composés binaires monocristallins - Google Patents

Procédé et dispositif destinés à la fabrication de composés binaires monocristallins

Info

Publication number
FR1473984A
FR1473984A FR45372A FR45372A FR1473984A FR 1473984 A FR1473984 A FR 1473984A FR 45372 A FR45372 A FR 45372A FR 45372 A FR45372 A FR 45372A FR 1473984 A FR1473984 A FR 1473984A
Authority
FR
France
Prior art keywords
production
binary compounds
monocrystalline
monocrystalline binary
compounds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR45372A
Other languages
English (en)
Inventor
Emile Deyris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RADIOTECHNIQUE COPRIM RTC
Original Assignee
RADIOTECHNIQUE COPRIM RTC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RADIOTECHNIQUE COPRIM RTC filed Critical RADIOTECHNIQUE COPRIM RTC
Priority to FR45372A priority Critical patent/FR1473984A/fr
Priority to US600124A priority patent/US3507625A/en
Priority to NL6700098A priority patent/NL6700098A/xx
Application granted granted Critical
Publication of FR1473984A publication Critical patent/FR1473984A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/971—Stoichiometric control of host substrate composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR45372A 1966-01-10 1966-01-10 Procédé et dispositif destinés à la fabrication de composés binaires monocristallins Expired FR1473984A (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR45372A FR1473984A (fr) 1966-01-10 1966-01-10 Procédé et dispositif destinés à la fabrication de composés binaires monocristallins
US600124A US3507625A (en) 1966-01-10 1966-12-08 Apparatus for producing binary crystalline compounds
NL6700098A NL6700098A (fr) 1966-01-10 1967-01-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR45372A FR1473984A (fr) 1966-01-10 1966-01-10 Procédé et dispositif destinés à la fabrication de composés binaires monocristallins

Publications (1)

Publication Number Publication Date
FR1473984A true FR1473984A (fr) 1967-03-24

Family

ID=8598225

Family Applications (1)

Application Number Title Priority Date Filing Date
FR45372A Expired FR1473984A (fr) 1966-01-10 1966-01-10 Procédé et dispositif destinés à la fabrication de composés binaires monocristallins

Country Status (3)

Country Link
US (1) US3507625A (fr)
FR (1) FR1473984A (fr)
NL (1) NL6700098A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040894A (en) * 1967-06-13 1977-08-09 Huguette Fumeron Rodot Process of preparing crystals of compounds and alloys
US3665888A (en) * 1970-03-16 1972-05-30 Bell Telephone Labor Inc Horizontal liquid phase crystal growth apparatus
GB1366532A (en) * 1971-04-21 1974-09-11 Nat Res Dev Apparatus for the preparation and growth of crystalline material
BE795938A (fr) * 1972-03-01 1973-08-27 Siemens Ag Procede de fabrication d'une barre d'arseniure de gallium monocristalline exempte de dislocation
FR2175595B1 (fr) * 1972-03-15 1974-09-13 Radiotechnique Compelec
US3902860A (en) * 1972-09-28 1975-09-02 Sumitomo Electric Industries Thermal treatment of semiconducting compounds having one or more volatile components
US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
US4239583A (en) * 1979-06-07 1980-12-16 Mobil Tyco Solar Energy Corporation Method and apparatus for crystal growth control
US4282184A (en) * 1979-10-09 1981-08-04 Siltec Corporation Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace
US4454096A (en) * 1981-06-15 1984-06-12 Siltec Corporation Crystal growth furnace recharge
JPS6041639B2 (ja) * 1982-07-08 1985-09-18 財団法人 半導体研究振興会 ＧａＡｓ単結晶引き上げ装置
WO1986006109A1 (fr) * 1985-04-16 1986-10-23 Energy Materials Corporation Procede et appareil pour la croissance de monocristaux
JPH10158088A (ja) * 1996-11-25 1998-06-16 Ebara Corp 固体材料の製造方法及びその製造装置
US8652257B2 (en) 2010-02-22 2014-02-18 Lev George Eidelman Controlled gravity feeding czochralski apparatus with on the way melting raw material

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL98843C (fr) * 1956-07-02
DE1188555B (de) * 1960-05-10 1965-03-11 Wacker Chemie Gmbh Verfahren zur Herstellung hochreiner kristalliner Koerper aus Nitriden, Phosphiden oder Arseniden der III. Hauptgruppe des Periodensystems

Also Published As

Publication number Publication date
US3507625A (en) 1970-04-21
NL6700098A (fr) 1967-07-11

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