FR1451676A - Procédé de fabrication d'un dispositif semiconducteur - Google Patents
Procédé de fabrication d'un dispositif semiconducteurInfo
- Publication number
- FR1451676A FR1451676A FR35270A FR35270A FR1451676A FR 1451676 A FR1451676 A FR 1451676A FR 35270 A FR35270 A FR 35270A FR 35270 A FR35270 A FR 35270A FR 1451676 A FR1451676 A FR 1451676A
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/921—Nonselective diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DET0027337 | 1964-10-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1451676A true FR1451676A (fr) | 1966-01-07 |
Family
ID=25999956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR35270A Expired FR1451676A (fr) | 1964-10-31 | 1965-10-18 | Procédé de fabrication d'un dispositif semiconducteur |
Country Status (5)
Country | Link |
---|---|
US (1) | US3445303A (fr) |
JP (1) | JPS4917914B1 (fr) |
DE (1) | DE1439737B2 (fr) |
FR (1) | FR1451676A (fr) |
GB (1) | GB1081376A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2156420A2 (en) * | 1971-04-08 | 1973-06-01 | Thomson Csf | Beam-lead mesa diode prodn - for high reliability |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL153374B (nl) * | 1966-10-05 | 1977-05-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze. |
USRE28653E (en) * | 1968-04-23 | 1975-12-16 | Method of fabricating semiconductor devices | |
IT963303B (it) * | 1971-07-29 | 1974-01-10 | Licentia Gmbh | Laser a semiconduttore |
US3912556A (en) * | 1971-10-27 | 1975-10-14 | Motorola Inc | Method of fabricating a scannable light emitting diode array |
US3878553A (en) * | 1972-12-26 | 1975-04-15 | Texas Instruments Inc | Interdigitated mesa beam lead diode and series array thereof |
JPS5631898B2 (fr) * | 1974-01-11 | 1981-07-24 | ||
GB1531238A (en) * | 1975-01-09 | 1978-11-08 | Standard Telephones Cables Ltd | Injection lasers |
FR2328286A1 (fr) * | 1975-10-14 | 1977-05-13 | Thomson Csf | Procede de fabrication de dispositifs a semiconducteurs, presentant une tres faible resistance thermique, et dispositifs obtenus par ledit procede |
US4199384A (en) * | 1979-01-29 | 1980-04-22 | Rca Corporation | Method of making a planar semiconductor on insulating substrate device utilizing the deposition of a dual dielectric layer between device islands |
JPH02125906A (ja) * | 1988-11-01 | 1990-05-14 | Yoshiaki Tsunoda | 内燃機関に於る排気ガス流の加速装置 |
JPH06252400A (ja) * | 1992-12-28 | 1994-09-09 | Sony Corp | 横型絶縁ゲート型電界効果トランジスタの製法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL125999C (fr) * | 1958-07-17 | |||
US3040218A (en) * | 1959-03-10 | 1962-06-19 | Hoffman Electronics Corp | Constant current devices |
US3194699A (en) * | 1961-11-13 | 1965-07-13 | Transitron Electronic Corp | Method of making semiconductive devices |
US3294600A (en) * | 1962-11-26 | 1966-12-27 | Nippon Electric Co | Method of manufacture of semiconductor elements |
-
1964
- 1964-10-31 DE DE19641439737 patent/DE1439737B2/de not_active Withdrawn
-
1965
- 1965-10-18 FR FR35270A patent/FR1451676A/fr not_active Expired
- 1965-10-24 US US504685A patent/US3445303A/en not_active Expired - Lifetime
- 1965-10-27 GB GB45469/65A patent/GB1081376A/en not_active Expired
- 1965-11-01 JP JP40066865A patent/JPS4917914B1/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2156420A2 (en) * | 1971-04-08 | 1973-06-01 | Thomson Csf | Beam-lead mesa diode prodn - for high reliability |
Also Published As
Publication number | Publication date |
---|---|
DE1439737B2 (de) | 1970-05-06 |
GB1081376A (en) | 1967-08-31 |
US3445303A (en) | 1969-05-20 |
DE1439737A1 (de) | 1969-06-26 |
JPS4917914B1 (fr) | 1974-05-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH465065A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
CH400370A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
FR1445508A (fr) | Procédé de fabrication d'un dispositif semi-conducteur par diffusion | |
CH392700A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
FR1451676A (fr) | Procédé de fabrication d'un dispositif semiconducteur | |
FR1364466A (fr) | Procédé de fabrication d'un dispositif à semi-conducteur | |
FR1293869A (fr) | Procédé de fabrication d'un dispositif à semi-conducteur | |
CH431655A (fr) | Procédé de fabrication d'un dispositif de connexion | |
CH427046A (fr) | Procédé de fabrication d'un dispositif semi-conducteur à effet de champ | |
FR1522733A (fr) | Procédé de fabrication d'un dispositif semiconducteur | |
FR1509527A (fr) | Procédé de fabrication d'un support de dispositif semi-conducteur | |
FR1478042A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
FR1485207A (fr) | Procédé de fabrication d'un dispositif semiconducteur | |
FR1453086A (fr) | Dispositif semiconducteur et procédé de fabrication d'un tel dispositif | |
FR1348733A (fr) | Procédé de fabrication d'un dispositif à semi-conducteur | |
FR1374096A (fr) | Procédé de fabrication d'un dispositif à semi-conducteur | |
FR1406461A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
FR1497685A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
BE605339A (fr) | Procédé de fabrication des raccordements électriques d'un dispositif semi-conducteur. | |
FR1405186A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
FR1547901A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
CH462325A (fr) | Procédé de fabrication d'un dispositif semi-conducteur | |
FR1336135A (fr) | Procédé de fabrication d'un dispositif photosensible | |
FR1464220A (fr) | Fabrication d'un dispositif semi-conducteur | |
FR1405805A (fr) | Procédé de fabrication d'un dispositif semi-conducteur |