FR1451676A - Procédé de fabrication d'un dispositif semiconducteur - Google Patents

Procédé de fabrication d'un dispositif semiconducteur

Info

Publication number
FR1451676A
FR1451676A FR35270A FR35270A FR1451676A FR 1451676 A FR1451676 A FR 1451676A FR 35270 A FR35270 A FR 35270A FR 35270 A FR35270 A FR 35270A FR 1451676 A FR1451676 A FR 1451676A
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR35270A
Other languages
English (en)
Inventor
Wilhelm Engbert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Application granted granted Critical
Publication of FR1451676A publication Critical patent/FR1451676A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/02Contacts, special
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/043Dual dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/049Equivalence and options
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/921Nonselective diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)
FR35270A 1964-10-31 1965-10-18 Procédé de fabrication d'un dispositif semiconducteur Expired FR1451676A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET0027337 1964-10-31

Publications (1)

Publication Number Publication Date
FR1451676A true FR1451676A (fr) 1966-01-07

Family

ID=25999956

Family Applications (1)

Application Number Title Priority Date Filing Date
FR35270A Expired FR1451676A (fr) 1964-10-31 1965-10-18 Procédé de fabrication d'un dispositif semiconducteur

Country Status (5)

Country Link
US (1) US3445303A (fr)
JP (1) JPS4917914B1 (fr)
DE (1) DE1439737B2 (fr)
FR (1) FR1451676A (fr)
GB (1) GB1081376A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2156420A2 (en) * 1971-04-08 1973-06-01 Thomson Csf Beam-lead mesa diode prodn - for high reliability

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL153374B (nl) * 1966-10-05 1977-05-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze.
USRE28653E (en) * 1968-04-23 1975-12-16 Method of fabricating semiconductor devices
IT963303B (it) * 1971-07-29 1974-01-10 Licentia Gmbh Laser a semiconduttore
US3912556A (en) * 1971-10-27 1975-10-14 Motorola Inc Method of fabricating a scannable light emitting diode array
US3878553A (en) * 1972-12-26 1975-04-15 Texas Instruments Inc Interdigitated mesa beam lead diode and series array thereof
JPS5631898B2 (fr) * 1974-01-11 1981-07-24
GB1531238A (en) * 1975-01-09 1978-11-08 Standard Telephones Cables Ltd Injection lasers
FR2328286A1 (fr) * 1975-10-14 1977-05-13 Thomson Csf Procede de fabrication de dispositifs a semiconducteurs, presentant une tres faible resistance thermique, et dispositifs obtenus par ledit procede
US4199384A (en) * 1979-01-29 1980-04-22 Rca Corporation Method of making a planar semiconductor on insulating substrate device utilizing the deposition of a dual dielectric layer between device islands
JPH02125906A (ja) * 1988-11-01 1990-05-14 Yoshiaki Tsunoda 内燃機関に於る排気ガス流の加速装置
JPH06252400A (ja) * 1992-12-28 1994-09-09 Sony Corp 横型絶縁ゲート型電界効果トランジスタの製法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL125999C (fr) * 1958-07-17
US3040218A (en) * 1959-03-10 1962-06-19 Hoffman Electronics Corp Constant current devices
US3194699A (en) * 1961-11-13 1965-07-13 Transitron Electronic Corp Method of making semiconductive devices
US3294600A (en) * 1962-11-26 1966-12-27 Nippon Electric Co Method of manufacture of semiconductor elements

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2156420A2 (en) * 1971-04-08 1973-06-01 Thomson Csf Beam-lead mesa diode prodn - for high reliability

Also Published As

Publication number Publication date
DE1439737B2 (de) 1970-05-06
GB1081376A (en) 1967-08-31
US3445303A (en) 1969-05-20
DE1439737A1 (de) 1969-06-26
JPS4917914B1 (fr) 1974-05-04

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