FR1293869A - Procédé de fabrication d'un dispositif à semi-conducteur - Google Patents
Procédé de fabrication d'un dispositif à semi-conducteurInfo
- Publication number
- FR1293869A FR1293869A FR866499A FR866499A FR1293869A FR 1293869 A FR1293869 A FR 1293869A FR 866499 A FR866499 A FR 866499A FR 866499 A FR866499 A FR 866499A FR 1293869 A FR1293869 A FR 1293869A
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES69202A DE1166938B (de) | 1960-07-01 | 1960-07-01 | Verfahren zur Herstellung einer Halbleiteranordnung |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1293869A true FR1293869A (fr) | 1962-05-18 |
Family
ID=7500812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR866499A Expired FR1293869A (fr) | 1960-07-01 | 1961-06-29 | Procédé de fabrication d'un dispositif à semi-conducteur |
Country Status (6)
Country | Link |
---|---|
US (1) | US3242018A (fr) |
CH (1) | CH391111A (fr) |
DE (1) | DE1166938B (fr) |
FR (1) | FR1293869A (fr) |
GB (1) | GB918889A (fr) |
NL (1) | NL266513A (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3200490A (en) * | 1962-12-07 | 1965-08-17 | Philco Corp | Method of forming ohmic bonds to a germanium-coated silicon body with eutectic alloyforming materials |
US4357183A (en) * | 1980-08-13 | 1982-11-02 | Massachusetts Institute Of Technology | Heteroepitaxy of germanium silicon on silicon utilizing alloying control |
US4861393A (en) * | 1983-10-28 | 1989-08-29 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semiconductor heterostructures having Gex Si1-x layers on Si utilizing molecular beam epitaxy |
US4728998A (en) * | 1984-09-06 | 1988-03-01 | Fairchild Semiconductor Corporation | CMOS circuit having a reduced tendency to latch |
JPS61241985A (ja) * | 1985-04-19 | 1986-10-28 | Eizo Yamaga | 赤外線検知装置 |
US5142641A (en) * | 1988-03-23 | 1992-08-25 | Fujitsu Limited | CMOS structure for eliminating latch-up of parasitic thyristor |
US5245204A (en) * | 1989-03-29 | 1993-09-14 | Canon Kabushiki Kaisha | Semiconductor device for use in an improved image pickup apparatus |
US5140400A (en) * | 1989-03-29 | 1992-08-18 | Canon Kabushiki Kaisha | Semiconductor device and photoelectric converting apparatus using the same |
US5095358A (en) * | 1990-04-18 | 1992-03-10 | National Semiconductor Corporation | Application of electronic properties of germanium to inhibit n-type or p-type diffusion in silicon |
JP3214868B2 (ja) * | 1991-07-19 | 2001-10-02 | ローム株式会社 | ヘテロ接合バイポーラトランジスタの製造方法 |
JP2971246B2 (ja) * | 1992-04-15 | 1999-11-02 | 株式会社東芝 | ヘテロバイポーラトランジスタの製造方法 |
US6861324B2 (en) | 2001-06-15 | 2005-03-01 | Maxim Integrated Products, Inc. | Method of forming a super self-aligned hetero-junction bipolar transistor |
US7772060B2 (en) * | 2006-06-21 | 2010-08-10 | Texas Instruments Deutschland Gmbh | Integrated SiGe NMOS and PMOS transistors |
KR102069345B1 (ko) * | 2018-03-06 | 2020-01-22 | 에스케이씨 주식회사 | 반도체 공정용 조성물 및 반도체 공정 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB815564A (en) * | 1957-06-21 | 1959-06-24 | Gen Motors Corp | Improvements in or relating to fuel injection systems |
DE883784C (de) * | 1949-04-06 | 1953-06-03 | Sueddeutsche App Fabrik G M B | Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen |
BE509317A (fr) * | 1951-03-07 | 1900-01-01 | ||
GB742237A (en) * | 1951-10-24 | 1955-12-21 | Ass Elect Ind | Improvements in barrier layer cells |
US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
DE966848C (de) * | 1952-07-29 | 1957-08-29 | Licentia Gmbh | Verfahren zum Herstellen von scharf abgegrenzten Schichten entgegengesetzten Leitfaehigkeitstyps auf einem fertigen Halbleiterkristall eines bestimmten Leitfaehigkeitstyps |
NL180750B (nl) * | 1952-08-20 | Bristol Myers Co | Werkwijze voor het bereiden van een 7-amino-3-cefem-4-carbonzuur derivaat door een 7-acylamino-3-cefem-4-carbonzuur derivaat om te zetten. | |
GB778383A (en) * | 1953-10-02 | 1957-07-03 | Standard Telephones Cables Ltd | Improvements in or relating to the production of material for semi-conductors |
BE537841A (fr) * | 1954-05-03 | 1900-01-01 | ||
DE1240188B (de) * | 1954-10-29 | 1967-05-11 | Telefunken Patent | Verfahren zum Herstellen von Halbleiterbauelementen mit einem oder mehreren einlegierten p-n-UEbergaengen |
DE1046196B (de) * | 1954-11-27 | 1958-12-11 | Siemens Ag | Verfahren zur Herstellung eines Halbleiters fuer Flaechengleichrichter, -transistoren od. dgl. mit mehreren Bereichen verschiedener Leitfaehigkeit |
GB805493A (en) * | 1955-04-07 | 1958-12-10 | Telefunken Gmbh | Improved method for the production of semi-conductor devices of npn or pnp type |
DE1029941B (de) * | 1955-07-13 | 1958-05-14 | Siemens Ag | Verfahren zur Herstellung von einkristallinen Halbleiterschichten |
US2855334A (en) * | 1955-08-17 | 1958-10-07 | Sprague Electric Co | Method of preparing semiconducting crystals having symmetrical junctions |
GB843407A (en) * | 1956-12-04 | 1960-08-04 | Sylvania Thorn Colour Television Laboratories Ltd | Improvements in and relating to semi-conductor devices |
US3099588A (en) * | 1959-03-11 | 1963-07-30 | Westinghouse Electric Corp | Formation of semiconductor transition regions by alloy vaporization and deposition |
FR1148316A (fr) * | 1959-10-20 | 1957-12-06 | Thomson Houston Comp Francaise | Procédé et appareil pour la réalisation de circuits imprimés |
-
0
- NL NL266513D patent/NL266513A/xx unknown
-
1960
- 1960-07-01 DE DES69202A patent/DE1166938B/de active Granted
-
1961
- 1961-06-02 CH CH647261A patent/CH391111A/de unknown
- 1961-06-15 US US117401A patent/US3242018A/en not_active Expired - Lifetime
- 1961-06-29 FR FR866499A patent/FR1293869A/fr not_active Expired
- 1961-06-29 GB GB23567/61A patent/GB918889A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CH391111A (de) | 1965-04-30 |
US3242018A (en) | 1966-03-22 |
GB918889A (en) | 1963-02-20 |
DE1166938B (de) | 1964-04-02 |
DE1166938C2 (fr) | 1964-10-08 |
NL266513A (fr) |
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