BE600139A - Procédé de fabrication d'un agencement semi-conducteur. - Google Patents

Procédé de fabrication d'un agencement semi-conducteur.

Info

Publication number
BE600139A
BE600139A BE600139A BE600139A BE600139A BE 600139 A BE600139 A BE 600139A BE 600139 A BE600139 A BE 600139A BE 600139 A BE600139 A BE 600139A BE 600139 A BE600139 A BE 600139A
Authority
BE
Belgium
Prior art keywords
manufacturing
semiconductor arrangement
semiconductor
arrangement
Prior art date
Application number
BE600139A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE600139A publication Critical patent/BE600139A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/142—Semiconductor-metal-semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00—Metal fusion bonding
    • Y10S228/903—Metal to nonmetal

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
BE600139A 1960-02-12 1961-02-13 Procédé de fabrication d'un agencement semi-conducteur. BE600139A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES67067A DE1126515B (de) 1960-02-12 1960-02-12 Verfahren zum Herstellen einer Halbleiteranordnung und danach hergestellte Halbleiteranordnung

Publications (1)

Publication Number Publication Date
BE600139A true BE600139A (fr) 1961-05-29

Family

ID=7499275

Family Applications (1)

Application Number Title Priority Date Filing Date
BE600139A BE600139A (fr) 1960-02-12 1961-02-13 Procédé de fabrication d'un agencement semi-conducteur.

Country Status (6)

Country Link
US (1) US3145447A (fr)
BE (1) BE600139A (fr)
CH (1) CH391106A (fr)
DE (1) DE1126515B (fr)
GB (1) GB927991A (fr)
NL (2) NL130054C (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1202616B (de) * 1962-02-23 1965-10-07 Siemens Ag Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht
NL282550A (fr) * 1962-08-27
NL301034A (fr) * 1962-11-27
US3235937A (en) * 1963-05-10 1966-02-22 Gen Electric Low cost transistor
DE1216452B (de) * 1963-09-11 1966-05-12 Siemens Ag Verfahren zur Herstellung von Photoelementen
NL6407230A (fr) * 1963-09-28 1965-03-29
US3283218A (en) * 1964-04-03 1966-11-01 Philco Corp High frequency diode having semiconductive mesa
US3459152A (en) * 1964-08-28 1969-08-05 Westinghouse Electric Corp Apparatus for epitaxially producing a layer on a substrate
DE1297237B (de) * 1964-09-18 1969-06-12 Itt Ind Gmbh Deutsche Flaechentransistor und Verfahren zu seiner Herstellung
DE1544257A1 (de) * 1965-01-13 1970-03-26 Siemens Ag Verfahren zum Herstellen von Halbleiteranordnungen
US3383571A (en) * 1965-07-19 1968-05-14 Rca Corp High-frequency power transistor with improved reverse-bias second breakdown characteristics
US3418181A (en) * 1965-10-20 1968-12-24 Motorola Inc Method of forming a semiconductor by masking and diffusing
US3460009A (en) * 1967-12-29 1969-08-05 Westinghouse Electric Corp Constant gain power transistor
JP4948629B2 (ja) * 2010-07-20 2012-06-06 ウシオ電機株式会社 レーザリフトオフ方法
CN109444331B (zh) * 2018-09-30 2020-08-28 中国科学技术大学 一种超高真空加热装置及其加热方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE860973C (de) * 1944-08-21 1952-12-29 Siemens Ag Detektor
DE883784C (de) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen
BE509317A (fr) * 1951-03-07 1900-01-01
GB778383A (en) * 1953-10-02 1957-07-03 Standard Telephones Cables Ltd Improvements in or relating to the production of material for semi-conductors
BE548791A (fr) * 1955-06-20
BE547665A (fr) * 1955-06-28
DE1029941B (de) * 1955-07-13 1958-05-14 Siemens Ag Verfahren zur Herstellung von einkristallinen Halbleiterschichten
US3030704A (en) * 1957-08-16 1962-04-24 Gen Electric Method of making non-rectifying contacts to silicon carbide

Also Published As

Publication number Publication date
GB927991A (en) 1963-06-06
US3145447A (en) 1964-08-25
DE1126515B (de) 1962-03-29
CH391106A (de) 1965-04-30
NL130054C (fr)
NL260906A (fr)

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