FR1464220A - Fabrication d'un dispositif semi-conducteur - Google Patents

Fabrication d'un dispositif semi-conducteur

Info

Publication number
FR1464220A
FR1464220A FR41207A FR41207A FR1464220A FR 1464220 A FR1464220 A FR 1464220A FR 41207 A FR41207 A FR 41207A FR 41207 A FR41207 A FR 41207A FR 1464220 A FR1464220 A FR 1464220A
Authority
FR
France
Prior art keywords
manufacture
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR41207A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sprague Electric Co
Original Assignee
Sprague Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US421061A external-priority patent/US3390019A/en
Application filed by Sprague Electric Co filed Critical Sprague Electric Co
Priority to FR41207A priority Critical patent/FR1464220A/fr
Application granted granted Critical
Publication of FR1464220A publication Critical patent/FR1464220A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/18—Controlling or regulating
    • C30B31/185—Pattern diffusion, e.g. by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
FR41207A 1964-12-24 1965-12-07 Fabrication d'un dispositif semi-conducteur Expired FR1464220A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR41207A FR1464220A (fr) 1964-12-24 1965-12-07 Fabrication d'un dispositif semi-conducteur

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US421061A US3390019A (en) 1964-12-24 1964-12-24 Method of making a semiconductor by ionic bombardment
FR41207A FR1464220A (fr) 1964-12-24 1965-12-07 Fabrication d'un dispositif semi-conducteur

Publications (1)

Publication Number Publication Date
FR1464220A true FR1464220A (fr) 1966-07-22

Family

ID=26167666

Family Applications (1)

Application Number Title Priority Date Filing Date
FR41207A Expired FR1464220A (fr) 1964-12-24 1965-12-07 Fabrication d'un dispositif semi-conducteur

Country Status (1)

Country Link
FR (1) FR1464220A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2067383A1 (fr) * 1969-11-19 1971-08-20 Philips Nv

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2067383A1 (fr) * 1969-11-19 1971-08-20 Philips Nv
FR2067382A1 (fr) * 1969-11-19 1971-08-20 Philips Nv

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