FR1445508A - Procédé de fabrication d'un dispositif semi-conducteur par diffusion - Google Patents
Procédé de fabrication d'un dispositif semi-conducteur par diffusionInfo
- Publication number
- FR1445508A FR1445508A FR10330A FR10330A FR1445508A FR 1445508 A FR1445508 A FR 1445508A FR 10330 A FR10330 A FR 10330A FR 10330 A FR10330 A FR 10330A FR 1445508 A FR1445508 A FR 1445508A
- Authority
- FR
- France
- Prior art keywords
- diffusion
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2258—Diffusion into or out of AIIIBV compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/18—Controlling or regulating
- C30B31/185—Pattern diffusion, e.g. by using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US353957A US3298879A (en) | 1964-03-23 | 1964-03-23 | Method of fabricating a semiconductor by masking |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1445508A true FR1445508A (fr) | 1966-07-15 |
Family
ID=23391312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR10330A Expired FR1445508A (fr) | 1964-03-23 | 1965-03-23 | Procédé de fabrication d'un dispositif semi-conducteur par diffusion |
Country Status (6)
Country | Link |
---|---|
US (1) | US3298879A (fr) |
DE (1) | DE1276607B (fr) |
FR (1) | FR1445508A (fr) |
GB (1) | GB1080306A (fr) |
NL (1) | NL6503608A (fr) |
SE (1) | SE304567B (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3477886A (en) * | 1964-12-07 | 1969-11-11 | Motorola Inc | Controlled diffusions in semiconductive materials |
US3408238A (en) * | 1965-06-02 | 1968-10-29 | Texas Instruments Inc | Use of both silicon oxide and phosphorus oxide to mask against diffusion of indium or gallium into germanium semiconductor device |
US3440496A (en) * | 1965-07-20 | 1969-04-22 | Hughes Aircraft Co | Surface-protected semiconductor devices and methods of manufacturing |
US3360695A (en) * | 1965-08-02 | 1967-12-26 | Sprague Electric Co | Induced region semiconductor device |
US3484854A (en) * | 1966-10-17 | 1969-12-16 | Westinghouse Electric Corp | Processing semiconductor materials |
US3767463A (en) * | 1967-01-13 | 1973-10-23 | Ibm | Method for controlling semiconductor surface potential |
USRE28402E (en) * | 1967-01-13 | 1975-04-29 | Method for controlling semiconductor surface potential | |
US3698071A (en) * | 1968-02-19 | 1972-10-17 | Texas Instruments Inc | Method and device employing high resistivity aluminum oxide film |
US3617929A (en) * | 1968-12-30 | 1971-11-02 | Texas Instruments Inc | Junction laser devices having a mode-suppressing region and methods of fabrication |
JPS5317860B1 (fr) * | 1971-01-22 | 1978-06-12 | ||
US3755016A (en) * | 1972-03-20 | 1973-08-28 | Motorola Inc | Diffusion process for compound semiconductors |
DE2214224C3 (de) * | 1972-03-23 | 1978-05-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Bildung von pn-Übergängen in III-V-Halbleiter-Einkristallen |
US3798082A (en) * | 1972-08-07 | 1974-03-19 | Bell Telephone Labor Inc | Technique for the fabrication of a pn junction device |
US3984267A (en) * | 1974-07-26 | 1976-10-05 | Monsanto Company | Process and apparatus for diffusion of semiconductor materials |
DE2506457C3 (de) * | 1975-02-15 | 1980-01-24 | S.A. Metallurgie Hoboken-Overpelt N.V., Bruessel | Verfahren zur Herstellung einer silikatischen Abdeckschicht auf einer Halbleiterscheibe öder auf einer auf ihr befindlichen Schicht |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL251064A (fr) * | 1955-11-04 | |||
BE570082A (fr) * | 1957-08-07 | 1900-01-01 | ||
US2974073A (en) * | 1958-12-04 | 1961-03-07 | Rca Corp | Method of making phosphorus diffused silicon semiconductor devices |
US3114663A (en) * | 1960-03-29 | 1963-12-17 | Rca Corp | Method of providing semiconductor wafers with protective and masking coatings |
US3183129A (en) * | 1960-10-14 | 1965-05-11 | Fairchild Camera Instr Co | Method of forming a semiconductor |
US3203840A (en) * | 1961-12-14 | 1965-08-31 | Texas Insutruments Inc | Diffusion method |
US3200019A (en) * | 1962-01-19 | 1965-08-10 | Rca Corp | Method for making a semiconductor device |
-
1964
- 1964-03-23 US US353957A patent/US3298879A/en not_active Expired - Lifetime
-
1965
- 1965-03-17 GB GB11426/65A patent/GB1080306A/en not_active Expired
- 1965-03-22 SE SE3678/65A patent/SE304567B/xx unknown
- 1965-03-22 NL NL6503608A patent/NL6503608A/xx unknown
- 1965-03-23 DE DER46186A patent/DE1276607B/de active Pending
- 1965-03-23 FR FR10330A patent/FR1445508A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3298879A (en) | 1967-01-17 |
GB1080306A (en) | 1967-08-23 |
SE304567B (fr) | 1968-09-30 |
NL6503608A (fr) | 1965-09-24 |
DE1276607B (de) | 1968-09-05 |
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