FR1445508A - Procédé de fabrication d'un dispositif semi-conducteur par diffusion - Google Patents

Procédé de fabrication d'un dispositif semi-conducteur par diffusion

Info

Publication number
FR1445508A
FR1445508A FR10330A FR10330A FR1445508A FR 1445508 A FR1445508 A FR 1445508A FR 10330 A FR10330 A FR 10330A FR 10330 A FR10330 A FR 10330A FR 1445508 A FR1445508 A FR 1445508A
Authority
FR
France
Prior art keywords
diffusion
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR10330A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Application granted granted Critical
Publication of FR1445508A publication Critical patent/FR1445508A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258Diffusion into or out of AIIIBV compounds
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/18Controlling or regulating
    • C30B31/185Pattern diffusion, e.g. by using masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/043Dual dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/065Gp III-V generic compounds-processing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/106Masks, special

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
FR10330A 1964-03-23 1965-03-23 Procédé de fabrication d'un dispositif semi-conducteur par diffusion Expired FR1445508A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US353957A US3298879A (en) 1964-03-23 1964-03-23 Method of fabricating a semiconductor by masking

Publications (1)

Publication Number Publication Date
FR1445508A true FR1445508A (fr) 1966-07-15

Family

ID=23391312

Family Applications (1)

Application Number Title Priority Date Filing Date
FR10330A Expired FR1445508A (fr) 1964-03-23 1965-03-23 Procédé de fabrication d'un dispositif semi-conducteur par diffusion

Country Status (6)

Country Link
US (1) US3298879A (fr)
DE (1) DE1276607B (fr)
FR (1) FR1445508A (fr)
GB (1) GB1080306A (fr)
NL (1) NL6503608A (fr)
SE (1) SE304567B (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3477886A (en) * 1964-12-07 1969-11-11 Motorola Inc Controlled diffusions in semiconductive materials
US3408238A (en) * 1965-06-02 1968-10-29 Texas Instruments Inc Use of both silicon oxide and phosphorus oxide to mask against diffusion of indium or gallium into germanium semiconductor device
US3440496A (en) * 1965-07-20 1969-04-22 Hughes Aircraft Co Surface-protected semiconductor devices and methods of manufacturing
US3360695A (en) * 1965-08-02 1967-12-26 Sprague Electric Co Induced region semiconductor device
US3484854A (en) * 1966-10-17 1969-12-16 Westinghouse Electric Corp Processing semiconductor materials
US3767463A (en) * 1967-01-13 1973-10-23 Ibm Method for controlling semiconductor surface potential
USRE28402E (en) * 1967-01-13 1975-04-29 Method for controlling semiconductor surface potential
US3698071A (en) * 1968-02-19 1972-10-17 Texas Instruments Inc Method and device employing high resistivity aluminum oxide film
US3617929A (en) * 1968-12-30 1971-11-02 Texas Instruments Inc Junction laser devices having a mode-suppressing region and methods of fabrication
JPS5317860B1 (fr) * 1971-01-22 1978-06-12
US3755016A (en) * 1972-03-20 1973-08-28 Motorola Inc Diffusion process for compound semiconductors
DE2214224C3 (de) * 1972-03-23 1978-05-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Bildung von pn-Übergängen in III-V-Halbleiter-Einkristallen
US3798082A (en) * 1972-08-07 1974-03-19 Bell Telephone Labor Inc Technique for the fabrication of a pn junction device
US3984267A (en) * 1974-07-26 1976-10-05 Monsanto Company Process and apparatus for diffusion of semiconductor materials
DE2506457C3 (de) * 1975-02-15 1980-01-24 S.A. Metallurgie Hoboken-Overpelt N.V., Bruessel Verfahren zur Herstellung einer silikatischen Abdeckschicht auf einer Halbleiterscheibe öder auf einer auf ihr befindlichen Schicht

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL251064A (fr) * 1955-11-04
BE570082A (fr) * 1957-08-07 1900-01-01
US2974073A (en) * 1958-12-04 1961-03-07 Rca Corp Method of making phosphorus diffused silicon semiconductor devices
US3114663A (en) * 1960-03-29 1963-12-17 Rca Corp Method of providing semiconductor wafers with protective and masking coatings
US3183129A (en) * 1960-10-14 1965-05-11 Fairchild Camera Instr Co Method of forming a semiconductor
US3203840A (en) * 1961-12-14 1965-08-31 Texas Insutruments Inc Diffusion method
US3200019A (en) * 1962-01-19 1965-08-10 Rca Corp Method for making a semiconductor device

Also Published As

Publication number Publication date
US3298879A (en) 1967-01-17
GB1080306A (en) 1967-08-23
SE304567B (fr) 1968-09-30
NL6503608A (fr) 1965-09-24
DE1276607B (de) 1968-09-05

Similar Documents

Publication Publication Date Title
CH465065A (fr) Procédé de fabrication d'un dispositif semi-conducteur
FR1445508A (fr) Procédé de fabrication d'un dispositif semi-conducteur par diffusion
CH400370A (fr) Procédé de fabrication d'un dispositif semi-conducteur
CH392700A (fr) Procédé de fabrication d'un dispositif semi-conducteur
FR1451676A (fr) Procédé de fabrication d'un dispositif semiconducteur
FR1364466A (fr) Procédé de fabrication d'un dispositif à semi-conducteur
CH431655A (fr) Procédé de fabrication d'un dispositif de connexion
CH427046A (fr) Procédé de fabrication d'un dispositif semi-conducteur à effet de champ
FR1456952A (fr) Dispositif semiconducteur et son procédé de fabrication
FR1509527A (fr) Procédé de fabrication d'un support de dispositif semi-conducteur
FR1522733A (fr) Procédé de fabrication d'un dispositif semiconducteur
FR1478042A (fr) Procédé de fabrication d'un dispositif semi-conducteur
FR1485207A (fr) Procédé de fabrication d'un dispositif semiconducteur
FR1453086A (fr) Dispositif semiconducteur et procédé de fabrication d'un tel dispositif
FR1406461A (fr) Procédé de fabrication d'un dispositif semi-conducteur
BE605339A (fr) Procédé de fabrication des raccordements électriques d'un dispositif semi-conducteur.
FR1374096A (fr) Procédé de fabrication d'un dispositif à semi-conducteur
FR1348733A (fr) Procédé de fabrication d'un dispositif à semi-conducteur
FR1497685A (fr) Procédé de fabrication d'un dispositif semi-conducteur
FR1405186A (fr) Procédé de fabrication d'un dispositif semi-conducteur
FR1547901A (fr) Procédé de fabrication d'un dispositif semi-conducteur
CH462325A (fr) Procédé de fabrication d'un dispositif semi-conducteur
FR1464220A (fr) Fabrication d'un dispositif semi-conducteur
BE601416A (fr) Procédé de fabrication d'un dispositif semi-conducteur en silicium.
FR1334643A (fr) Procédé de fabrication d'un dispositif semi-conducteur