DE112021005000T5 - Ferroelektrische Vorrichtung und Halbleitervorrichtung - Google Patents

Ferroelektrische Vorrichtung und Halbleitervorrichtung Download PDF

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Publication number
DE112021005000T5
DE112021005000T5 DE112021005000.1T DE112021005000T DE112021005000T5 DE 112021005000 T5 DE112021005000 T5 DE 112021005000T5 DE 112021005000 T DE112021005000 T DE 112021005000T DE 112021005000 T5 DE112021005000 T5 DE 112021005000T5
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Prior art keywords
insulator
conductor
oxide
oxygen
metal oxide
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Pending
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DE112021005000.1T
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German (de)
English (en)
Inventor
Shunpei Yamazaki
Yasuhiro Jinbo
Hitoshi KUNITAKE
Kazuaki Ohshima
Masashi Oota
Kazuma Furutani
Takeshi Aoki
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of DE112021005000T5 publication Critical patent/DE112021005000T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

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  • Semiconductor Memories (AREA)
DE112021005000.1T 2020-09-22 2021-09-09 Ferroelektrische Vorrichtung und Halbleitervorrichtung Pending DE112021005000T5 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2020-158058 2020-09-22
JP2020-158057 2020-09-22
JP2020158058 2020-09-22
JP2020158057 2020-09-22
JP2020-161542 2020-09-26
JP2020161542 2020-09-26
PCT/IB2021/058179 WO2022064306A1 (ja) 2020-09-22 2021-09-09 強誘電体デバイス、および半導体装置

Publications (1)

Publication Number Publication Date
DE112021005000T5 true DE112021005000T5 (de) 2023-07-20

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ID=80846286

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021005000.1T Pending DE112021005000T5 (de) 2020-09-22 2021-09-09 Ferroelektrische Vorrichtung und Halbleitervorrichtung

Country Status (7)

Country Link
US (2) US12550332B2 (https=)
JP (1) JPWO2022064306A1 (https=)
KR (1) KR20230069933A (https=)
CN (1) CN116171484A (https=)
DE (1) DE112021005000T5 (https=)
TW (1) TW202213766A (https=)
WO (1) WO2022064306A1 (https=)

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US12538495B2 (en) 2020-09-06 2026-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, capacitor, and manufacturing method thereof
DE112021005537T5 (de) * 2020-10-20 2023-08-17 Semiconductor Energy Laboratory Co., Ltd. Ferroelektrische Vorrichtung und Halbleitervorrichtung
US20230200075A1 (en) * 2021-12-22 2023-06-22 Intel Corporation Memory with vertical transistors and wrap-around control lines
US12471289B2 (en) 2021-12-22 2025-11-11 Intel Corporation Diagonal memory with vertical transistors and wrap-around control lines
KR102929695B1 (ko) 2022-04-14 2026-02-20 삼성전자주식회사 반도체 장치
CN117222306A (zh) * 2022-05-30 2023-12-12 华为技术有限公司 铁电单元、三维铁电结构和铁电存储器
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US12119035B2 (en) * 2022-07-29 2024-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer film scheme for polarization improvement
CN117794250A (zh) * 2022-09-19 2024-03-29 华为技术有限公司 铁电存储阵列及其制备方法、存储器、电子设备
TW202441602A (zh) * 2022-12-22 2024-10-16 日商半導體能源研究所股份有限公司 半導體裝置
US11741428B1 (en) * 2022-12-23 2023-08-29 Kepler Computing Inc. Iterative monetization of process development of non-linear polar material and devices
WO2024252246A1 (ja) * 2023-06-09 2024-12-12 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法
US20250227935A1 (en) * 2024-01-10 2025-07-10 Macronix International Co., Ltd. Semiconductor structure and manufacturing method thereof

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JPH11251535A (ja) * 1998-02-27 1999-09-17 Fujitsu Ltd 半導体装置およびその製造方法
JP2003086776A (ja) * 2001-09-10 2003-03-20 Fujitsu Ltd 半導体装置及びその製造方法
JP4331442B2 (ja) * 2002-06-14 2009-09-16 富士通マイクロエレクトロニクス株式会社 強誘電体キャパシタ及びその製造方法並びに強誘電体メモリ
JP4861627B2 (ja) * 2005-01-25 2012-01-25 ラピスセミコンダクタ株式会社 強誘電体キャパシタの製造方法
JP2011124478A (ja) * 2009-12-14 2011-06-23 Panasonic Corp 半導体記憶装置及びその製造方法
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Also Published As

Publication number Publication date
US20260113951A1 (en) 2026-04-23
JPWO2022064306A1 (https=) 2022-03-31
KR20230069933A (ko) 2023-05-19
CN116171484A (zh) 2023-05-26
US12550332B2 (en) 2026-02-10
US20230363174A1 (en) 2023-11-09
TW202213766A (zh) 2022-04-01
WO2022064306A1 (ja) 2022-03-31

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