TW202213766A - 鐵電體器件及半導體裝置 - Google Patents

鐵電體器件及半導體裝置 Download PDF

Info

Publication number
TW202213766A
TW202213766A TW110133092A TW110133092A TW202213766A TW 202213766 A TW202213766 A TW 202213766A TW 110133092 A TW110133092 A TW 110133092A TW 110133092 A TW110133092 A TW 110133092A TW 202213766 A TW202213766 A TW 202213766A
Authority
TW
Taiwan
Prior art keywords
insulator
conductor
oxide
oxygen
metal oxide
Prior art date
Application number
TW110133092A
Other languages
English (en)
Chinese (zh)
Inventor
山崎舜平
神保安弘
國武寛司
大嶋和晃
太田將志
古谷一馬
青木健
Original Assignee
日商半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商半導體能源研究所股份有限公司 filed Critical 日商半導體能源研究所股份有限公司
Publication of TW202213766A publication Critical patent/TW202213766A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Landscapes

  • Semiconductor Memories (AREA)
TW110133092A 2020-09-22 2021-09-06 鐵電體器件及半導體裝置 TW202213766A (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2020-158058 2020-09-22
JP2020-158057 2020-09-22
JP2020158058 2020-09-22
JP2020158057 2020-09-22
JP2020-161542 2020-09-26
JP2020161542 2020-09-26

Publications (1)

Publication Number Publication Date
TW202213766A true TW202213766A (zh) 2022-04-01

Family

ID=80846286

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110133092A TW202213766A (zh) 2020-09-22 2021-09-06 鐵電體器件及半導體裝置

Country Status (7)

Country Link
US (2) US12550332B2 (https=)
JP (1) JPWO2022064306A1 (https=)
KR (1) KR20230069933A (https=)
CN (1) CN116171484A (https=)
DE (1) DE112021005000T5 (https=)
TW (1) TW202213766A (https=)
WO (1) WO2022064306A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI872620B (zh) * 2022-12-23 2025-02-11 美商凱普勒運算公司 用於非線性極性材料製程開發的方法、用於對製程開發計價的方法，以及用於製程開發的方法
TWI893358B (zh) * 2022-07-29 2025-08-11 台灣積體電路製造股份有限公司 積體晶片及其形成方法
TWI901162B (zh) * 2024-01-10 2025-10-11 旺宏電子股份有限公司 半導體結構及其製造方法
US12581642B2 (en) 2022-04-14 2026-03-17 Samsung Electronics Co., Ltd. Semiconductor device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12538495B2 (en) 2020-09-06 2026-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, capacitor, and manufacturing method thereof
DE112021005537T5 (de) * 2020-10-20 2023-08-17 Semiconductor Energy Laboratory Co., Ltd. Ferroelektrische Vorrichtung und Halbleitervorrichtung
US20230200075A1 (en) * 2021-12-22 2023-06-22 Intel Corporation Memory with vertical transistors and wrap-around control lines
US12471289B2 (en) 2021-12-22 2025-11-11 Intel Corporation Diagonal memory with vertical transistors and wrap-around control lines
CN117222306A (zh) * 2022-05-30 2023-12-12 华为技术有限公司 铁电单元、三维铁电结构和铁电存储器
CN117241589A (zh) * 2022-06-02 2023-12-15 华为技术有限公司 铁电存储器及其制备方法、电子设备
CN117794250A (zh) * 2022-09-19 2024-03-29 华为技术有限公司 铁电存储阵列及其制备方法、存储器、电子设备
TW202441602A (zh) * 2022-12-22 2024-10-16 日商半導體能源研究所股份有限公司 半導體裝置
WO2024252246A1 (ja) * 2023-06-09 2024-12-12 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251535A (ja) * 1998-02-27 1999-09-17 Fujitsu Ltd 半導体装置およびその製造方法
JP2003086776A (ja) * 2001-09-10 2003-03-20 Fujitsu Ltd 半導体装置及びその製造方法
JP4331442B2 (ja) * 2002-06-14 2009-09-16 富士通マイクロエレクトロニクス株式会社 強誘電体キャパシタ及びその製造方法並びに強誘電体メモリ
JP4861627B2 (ja) * 2005-01-25 2012-01-25 ラピスセミコンダクタ株式会社 強誘電体キャパシタの製造方法
JP2011124478A (ja) * 2009-12-14 2011-06-23 Panasonic Corp 半導体記憶装置及びその製造方法
JP5633346B2 (ja) * 2009-12-25 2014-12-03 株式会社リコー 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム
CN102782858B (zh) 2009-12-25 2015-10-07 株式会社理光 场效应晶体管、半导体存储器、显示元件、图像显示设备和系统
JP6121819B2 (ja) * 2013-07-04 2017-04-26 株式会社東芝 半導体装置および誘電体膜
JP6067524B2 (ja) 2013-09-25 2017-01-25 株式会社東芝 半導体装置および誘電体膜
US10242989B2 (en) * 2014-05-20 2019-03-26 Micron Technology, Inc. Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods
JP6887307B2 (ja) * 2017-05-19 2021-06-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2019212793A (ja) 2018-06-06 2019-12-12 ソニー株式会社 強誘電記憶装置
JP7066585B2 (ja) * 2018-09-19 2022-05-13 キオクシア株式会社 記憶装置
US10978563B2 (en) * 2018-12-21 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US12082390B2 (en) * 2019-03-29 2024-09-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US12057508B2 (en) 2019-03-29 2024-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP7638643B2 (ja) 2020-08-21 2025-03-04 株式会社半導体エネルギー研究所 半導体装置および電子機器
TW202210653A (zh) 2020-09-07 2022-03-16 日商半導體能源研究所股份有限公司 金屬氧化物膜、半導體裝置以及其製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12581642B2 (en) 2022-04-14 2026-03-17 Samsung Electronics Co., Ltd. Semiconductor device
TWI893358B (zh) * 2022-07-29 2025-08-11 台灣積體電路製造股份有限公司 積體晶片及其形成方法
TWI872620B (zh) * 2022-12-23 2025-02-11 美商凱普勒運算公司 用於非線性極性材料製程開發的方法、用於對製程開發計價的方法，以及用於製程開發的方法
TWI901162B (zh) * 2024-01-10 2025-10-11 旺宏電子股份有限公司 半導體結構及其製造方法

Also Published As

Publication number Publication date
US20260113951A1 (en) 2026-04-23
DE112021005000T5 (de) 2023-07-20
JPWO2022064306A1 (https=) 2022-03-31
KR20230069933A (ko) 2023-05-19
CN116171484A (zh) 2023-05-26
US12550332B2 (en) 2026-02-10
US20230363174A1 (en) 2023-11-09
WO2022064306A1 (ja) 2022-03-31

Similar Documents

Publication Publication Date Title
TW202213766A (zh) 鐵電體器件及半導體裝置
JP7748373B2 (ja) 半導体装置、半導体装置の作製方法
JP7732011B2 (ja) 半導体装置
TWI801620B (zh) 半導體裝置以及半導體裝置的製造方法
JP7713464B2 (ja) 強誘電体デバイス、半導体装置
JP2025032049A (ja) 半導体装置
TW202310425A (zh) 半導體裝置
TWI809100B (zh) 半導體裝置、及半導體裝置的製造方法
US12538495B2 (en) Semiconductor device, capacitor, and manufacturing method thereof
WO2022084795A1 (ja) 強誘電体デバイス、および半導体装置
JP7771265B2 (ja) 半導体装置
TWI833794B (zh) 半導體裝置及半導體裝置的製造方法
CN115917038A (zh) 半导体装置的制造方法
CN115997276A (zh) 半导体装置
JP2024038273A (ja) 半導体装置
JP7798787B2 (ja) 半導体装置
WO2023047224A1 (ja) 半導体装置
CN113491006A (zh) 半导体装置及半导体装置的制造方法
US20260122911A1 (en) Semiconductor device, capacitor, and manufacturing method thereof
WO2022064316A1 (ja) 半導体装置
CN116158204A (zh) 半导体装置及其制造方法
CN115968502A (zh) 半导体装置的制造方法