JPWO2022064306A1 - - Google Patents

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Publication number
JPWO2022064306A1
JPWO2022064306A1 JP2022551438A JP2022551438A JPWO2022064306A1 JP WO2022064306 A1 JPWO2022064306 A1 JP WO2022064306A1 JP 2022551438 A JP2022551438 A JP 2022551438A JP 2022551438 A JP2022551438 A JP 2022551438A JP WO2022064306 A1 JPWO2022064306 A1 JP WO2022064306A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022551438A
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Japanese (ja)
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JPWO2022064306A5 (https=
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Publication of JPWO2022064306A1 publication Critical patent/JPWO2022064306A1/ja
Publication of JPWO2022064306A5 publication Critical patent/JPWO2022064306A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
JP2022551438A 2020-09-22 2021-09-09 Pending JPWO2022064306A1 (https=)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2020158058 2020-09-22
JP2020158057 2020-09-22
JP2020161542 2020-09-26
PCT/IB2021/058179 WO2022064306A1 (ja) 2020-09-22 2021-09-09 強誘電体デバイス、および半導体装置

Publications (2)

Publication Number Publication Date
JPWO2022064306A1 true JPWO2022064306A1 (https=) 2022-03-31
JPWO2022064306A5 JPWO2022064306A5 (https=) 2024-09-13

Family

ID=80846286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022551438A Pending JPWO2022064306A1 (https=) 2020-09-22 2021-09-09

Country Status (7)

Country Link
US (2) US12550332B2 (https=)
JP (1) JPWO2022064306A1 (https=)
KR (1) KR20230069933A (https=)
CN (1) CN116171484A (https=)
DE (1) DE112021005000T5 (https=)
TW (1) TW202213766A (https=)
WO (1) WO2022064306A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12538495B2 (en) 2020-09-06 2026-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, capacitor, and manufacturing method thereof
DE112021005537T5 (de) * 2020-10-20 2023-08-17 Semiconductor Energy Laboratory Co., Ltd. Ferroelektrische Vorrichtung und Halbleitervorrichtung
US20230200075A1 (en) * 2021-12-22 2023-06-22 Intel Corporation Memory with vertical transistors and wrap-around control lines
US12471289B2 (en) 2021-12-22 2025-11-11 Intel Corporation Diagonal memory with vertical transistors and wrap-around control lines
KR102929695B1 (ko) 2022-04-14 2026-02-20 삼성전자주식회사 반도체 장치
CN117222306A (zh) * 2022-05-30 2023-12-12 华为技术有限公司 铁电单元、三维铁电结构和铁电存储器
CN117241589A (zh) * 2022-06-02 2023-12-15 华为技术有限公司 铁电存储器及其制备方法、电子设备
US12119035B2 (en) * 2022-07-29 2024-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer film scheme for polarization improvement
CN117794250A (zh) * 2022-09-19 2024-03-29 华为技术有限公司 铁电存储阵列及其制备方法、存储器、电子设备
TW202441602A (zh) * 2022-12-22 2024-10-16 日商半導體能源研究所股份有限公司 半導體裝置
US11741428B1 (en) * 2022-12-23 2023-08-29 Kepler Computing Inc. Iterative monetization of process development of non-linear polar material and devices
WO2024252246A1 (ja) * 2023-06-09 2024-12-12 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法
US20250227935A1 (en) * 2024-01-10 2025-07-10 Macronix International Co., Ltd. Semiconductor structure and manufacturing method thereof

Citations (9)

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JPH11251535A (ja) * 1998-02-27 1999-09-17 Fujitsu Ltd 半導体装置およびその製造方法
JP2003086776A (ja) * 2001-09-10 2003-03-20 Fujitsu Ltd 半導体装置及びその製造方法
US20030230773A1 (en) * 2002-06-14 2003-12-18 Fujitsu Limited Ferroelectric capacitor, process for manufacturing thereof and ferroelectric memory
US20060166379A1 (en) * 2005-01-25 2006-07-27 Motoki Kobayashi Method for manufacturing ferroelectric capacitor
JP2011124478A (ja) * 2009-12-14 2011-06-23 Panasonic Corp 半導体記憶装置及びその製造方法
WO2015002206A1 (ja) * 2013-07-04 2015-01-08 株式会社 東芝 半導体装置および誘電体膜
WO2015179062A1 (en) * 2014-05-20 2015-11-26 Micron Technology, Inc. Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods
US20200091160A1 (en) * 2018-09-19 2020-03-19 Toshiba Memory Corporation Memory device
US20200203489A1 (en) * 2018-12-21 2020-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device

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JP5633346B2 (ja) * 2009-12-25 2014-12-03 株式会社リコー 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム
CN102782858B (zh) 2009-12-25 2015-10-07 株式会社理光 场效应晶体管、半导体存储器、显示元件、图像显示设备和系统
JP6067524B2 (ja) 2013-09-25 2017-01-25 株式会社東芝 半導体装置および誘電体膜
JP6887307B2 (ja) * 2017-05-19 2021-06-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2019212793A (ja) 2018-06-06 2019-12-12 ソニー株式会社 強誘電記憶装置
US12082390B2 (en) * 2019-03-29 2024-09-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US12057508B2 (en) 2019-03-29 2024-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP7638643B2 (ja) 2020-08-21 2025-03-04 株式会社半導体エネルギー研究所 半導体装置および電子機器
TW202210653A (zh) 2020-09-07 2022-03-16 日商半導體能源研究所股份有限公司 金屬氧化物膜、半導體裝置以及其製造方法

Patent Citations (17)

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JPH11251535A (ja) * 1998-02-27 1999-09-17 Fujitsu Ltd 半導体装置およびその製造方法
JP2003086776A (ja) * 2001-09-10 2003-03-20 Fujitsu Ltd 半導体装置及びその製造方法
US20030230773A1 (en) * 2002-06-14 2003-12-18 Fujitsu Limited Ferroelectric capacitor, process for manufacturing thereof and ferroelectric memory
JP2004022702A (ja) * 2002-06-14 2004-01-22 Fujitsu Ltd 強誘電体キャパシタ及びその製造方法並びに強誘電体メモリ
US20060166379A1 (en) * 2005-01-25 2006-07-27 Motoki Kobayashi Method for manufacturing ferroelectric capacitor
JP2006210436A (ja) * 2005-01-25 2006-08-10 Oki Electric Ind Co Ltd 強誘電体キャパシタの製造方法
JP2011124478A (ja) * 2009-12-14 2011-06-23 Panasonic Corp 半導体記憶装置及びその製造方法
JP2015015334A (ja) * 2013-07-04 2015-01-22 株式会社東芝 半導体装置および誘電体膜
WO2015002206A1 (ja) * 2013-07-04 2015-01-08 株式会社 東芝 半導体装置および誘電体膜
US20160005961A1 (en) * 2013-07-04 2016-01-07 Kabushiki Kaisha Toshiba Semiconductor device and dielectric film
WO2015179062A1 (en) * 2014-05-20 2015-11-26 Micron Technology, Inc. Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods
US20150340372A1 (en) * 2014-05-20 2015-11-26 Micron Technology, Inc. Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods
JP2017518639A (ja) * 2014-05-20 2017-07-06 マイクロン テクノロジー， インク． 有極性、カイラル、非中心対称性強誘電体材料、その材料を含むメモリセルおよび関連するデバイスと方法。
US20200091160A1 (en) * 2018-09-19 2020-03-19 Toshiba Memory Corporation Memory device
JP2020047796A (ja) * 2018-09-19 2020-03-26 キオクシア株式会社 記憶装置
US20200203489A1 (en) * 2018-12-21 2020-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2020102623A (ja) * 2018-12-21 2020-07-02 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Also Published As

Publication number Publication date
US20260113951A1 (en) 2026-04-23
DE112021005000T5 (de) 2023-07-20
KR20230069933A (ko) 2023-05-19
CN116171484A (zh) 2023-05-26
US12550332B2 (en) 2026-02-10
US20230363174A1 (en) 2023-11-09
TW202213766A (zh) 2022-04-01
WO2022064306A1 (ja) 2022-03-31

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