JPWO2022064306A5 - - Google Patents
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- Publication number
- JPWO2022064306A5 JPWO2022064306A5 JP2022551438A JP2022551438A JPWO2022064306A5 JP WO2022064306 A5 JPWO2022064306 A5 JP WO2022064306A5 JP 2022551438 A JP2022551438 A JP 2022551438A JP 2022551438 A JP2022551438 A JP 2022551438A JP WO2022064306 A5 JPWO2022064306 A5 JP WO2022064306A5
- Authority
- JP
- Japan
- Prior art keywords
- metal oxide
- oxide film
- oxygen
- conductor
- zirconium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims 18
- 150000004706 metal oxides Chemical class 0.000 claims 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 13
- 239000001301 oxygen Substances 0.000 claims 13
- 229910052760 oxygen Inorganic materials 0.000 claims 13
- 239000004020 conductor Substances 0.000 claims 12
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 9
- 229910052726 zirconium Inorganic materials 0.000 claims 9
- 238000007789 sealing Methods 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 7
- 239000013078 crystal Substances 0.000 claims 6
- 229910052735 hafnium Inorganic materials 0.000 claims 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 4
- 239000000460 chlorine Substances 0.000 claims 4
- 229910052801 chlorine Inorganic materials 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 230000005621 ferroelectricity Effects 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020158058 | 2020-09-22 | ||
| JP2020158057 | 2020-09-22 | ||
| JP2020161542 | 2020-09-26 | ||
| PCT/IB2021/058179 WO2022064306A1 (ja) | 2020-09-22 | 2021-09-09 | 強誘電体デバイス、および半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022064306A1 JPWO2022064306A1 (https=) | 2022-03-31 |
| JPWO2022064306A5 true JPWO2022064306A5 (https=) | 2024-09-13 |
Family
ID=80846286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022551438A Pending JPWO2022064306A1 (https=) | 2020-09-22 | 2021-09-09 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US12550332B2 (https=) |
| JP (1) | JPWO2022064306A1 (https=) |
| KR (1) | KR20230069933A (https=) |
| CN (1) | CN116171484A (https=) |
| DE (1) | DE112021005000T5 (https=) |
| TW (1) | TW202213766A (https=) |
| WO (1) | WO2022064306A1 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12538495B2 (en) | 2020-09-06 | 2026-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, capacitor, and manufacturing method thereof |
| DE112021005537T5 (de) * | 2020-10-20 | 2023-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Ferroelektrische Vorrichtung und Halbleitervorrichtung |
| US20230200075A1 (en) * | 2021-12-22 | 2023-06-22 | Intel Corporation | Memory with vertical transistors and wrap-around control lines |
| US12471289B2 (en) | 2021-12-22 | 2025-11-11 | Intel Corporation | Diagonal memory with vertical transistors and wrap-around control lines |
| KR102929695B1 (ko) | 2022-04-14 | 2026-02-20 | 삼성전자주식회사 | 반도체 장치 |
| CN117222306A (zh) * | 2022-05-30 | 2023-12-12 | 华为技术有限公司 | 铁电单元、三维铁电结构和铁电存储器 |
| CN117241589A (zh) * | 2022-06-02 | 2023-12-15 | 华为技术有限公司 | 铁电存储器及其制备方法、电子设备 |
| US12119035B2 (en) * | 2022-07-29 | 2024-10-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spacer film scheme for polarization improvement |
| CN117794250A (zh) * | 2022-09-19 | 2024-03-29 | 华为技术有限公司 | 铁电存储阵列及其制备方法、存储器、电子设备 |
| TW202441602A (zh) * | 2022-12-22 | 2024-10-16 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| US11741428B1 (en) * | 2022-12-23 | 2023-08-29 | Kepler Computing Inc. | Iterative monetization of process development of non-linear polar material and devices |
| WO2024252246A1 (ja) * | 2023-06-09 | 2024-12-12 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法 |
| US20250227935A1 (en) * | 2024-01-10 | 2025-07-10 | Macronix International Co., Ltd. | Semiconductor structure and manufacturing method thereof |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11251535A (ja) * | 1998-02-27 | 1999-09-17 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| JP2003086776A (ja) * | 2001-09-10 | 2003-03-20 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP4331442B2 (ja) * | 2002-06-14 | 2009-09-16 | 富士通マイクロエレクトロニクス株式会社 | 強誘電体キャパシタ及びその製造方法並びに強誘電体メモリ |
| JP4861627B2 (ja) * | 2005-01-25 | 2012-01-25 | ラピスセミコンダクタ株式会社 | 強誘電体キャパシタの製造方法 |
| JP2011124478A (ja) * | 2009-12-14 | 2011-06-23 | Panasonic Corp | 半導体記憶装置及びその製造方法 |
| JP5633346B2 (ja) * | 2009-12-25 | 2014-12-03 | 株式会社リコー | 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム |
| CN102782858B (zh) | 2009-12-25 | 2015-10-07 | 株式会社理光 | 场效应晶体管、半导体存储器、显示元件、图像显示设备和系统 |
| JP6121819B2 (ja) * | 2013-07-04 | 2017-04-26 | 株式会社東芝 | 半導体装置および誘電体膜 |
| JP6067524B2 (ja) | 2013-09-25 | 2017-01-25 | 株式会社東芝 | 半導体装置および誘電体膜 |
| US10242989B2 (en) * | 2014-05-20 | 2019-03-26 | Micron Technology, Inc. | Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods |
| JP6887307B2 (ja) * | 2017-05-19 | 2021-06-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2019212793A (ja) | 2018-06-06 | 2019-12-12 | ソニー株式会社 | 強誘電記憶装置 |
| JP7066585B2 (ja) * | 2018-09-19 | 2022-05-13 | キオクシア株式会社 | 記憶装置 |
| US10978563B2 (en) * | 2018-12-21 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US12082390B2 (en) * | 2019-03-29 | 2024-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US12057508B2 (en) | 2019-03-29 | 2024-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| JP7638643B2 (ja) | 2020-08-21 | 2025-03-04 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
| TW202210653A (zh) | 2020-09-07 | 2022-03-16 | 日商半導體能源研究所股份有限公司 | 金屬氧化物膜、半導體裝置以及其製造方法 |
-
2021
- 2021-09-06 TW TW110133092A patent/TW202213766A/zh unknown
- 2021-09-09 US US18/245,757 patent/US12550332B2/en active Active
- 2021-09-09 KR KR1020237009129A patent/KR20230069933A/ko active Pending
- 2021-09-09 DE DE112021005000.1T patent/DE112021005000T5/de active Pending
- 2021-09-09 JP JP2022551438A patent/JPWO2022064306A1/ja active Pending
- 2021-09-09 WO PCT/IB2021/058179 patent/WO2022064306A1/ja not_active Ceased
- 2021-09-09 CN CN202180064527.9A patent/CN116171484A/zh active Pending
-
2025
- 2025-12-22 US US19/428,503 patent/US20260113951A1/en active Pending
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