JPWO2020157600A5 - - Google Patents

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Publication number
JPWO2020157600A5
JPWO2020157600A5 JP2020568869A JP2020568869A JPWO2020157600A5 JP WO2020157600 A5 JPWO2020157600 A5 JP WO2020157600A5 JP 2020568869 A JP2020568869 A JP 2020568869A JP 2020568869 A JP2020568869 A JP 2020568869A JP WO2020157600 A5 JPWO2020157600 A5 JP WO2020157600A5
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JP
Japan
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circuit
transistor
insulator
layer
drain
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JP2020568869A
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English (en)
Japanese (ja)
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JPWO2020157600A1 (https=
JP7434188B2 (ja
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Priority claimed from PCT/IB2020/050457 external-priority patent/WO2020157600A1/ja
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Priority to JP2024016810A priority Critical patent/JP2024045443A/ja
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Publication of JP7434188B2 publication Critical patent/JP7434188B2/ja
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JP2020568869A 2019-01-29 2020-01-22 撮像装置および電子機器 Active JP7434188B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024016810A JP2024045443A (ja) 2019-01-29 2024-02-07 撮像装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019013507 2019-01-29
JP2019013507 2019-01-29
PCT/IB2020/050457 WO2020157600A1 (ja) 2019-01-29 2020-01-22 撮像装置および電子機器

Related Child Applications (1)

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JP2024016810A Division JP2024045443A (ja) 2019-01-29 2024-02-07 撮像装置

Publications (3)

Publication Number Publication Date
JPWO2020157600A1 JPWO2020157600A1 (https=) 2020-08-06
JPWO2020157600A5 true JPWO2020157600A5 (https=) 2022-12-08
JP7434188B2 JP7434188B2 (ja) 2024-02-20

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ID=71841688

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JP2020568869A Active JP7434188B2 (ja) 2019-01-29 2020-01-22 撮像装置および電子機器
JP2024016810A Withdrawn JP2024045443A (ja) 2019-01-29 2024-02-07 撮像装置

Family Applications After (1)

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JP2024016810A Withdrawn JP2024045443A (ja) 2019-01-29 2024-02-07 撮像装置

Country Status (6)

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US (2) US12035061B2 (https=)
JP (2) JP7434188B2 (https=)
KR (1) KR20210120001A (https=)
CN (1) CN113330555A (https=)
DE (1) DE112020000575T5 (https=)
WO (1) WO2020157600A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230071125A (ko) * 2020-09-22 2023-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
KR20240093546A (ko) 2021-10-27 2024-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US12272299B1 (en) * 2023-10-06 2025-04-08 Globalfoundries U.S. Inc. Compact memory-in-pixel display structure
WO2025196596A1 (ja) * 2024-03-21 2025-09-25 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
WO2025210468A1 (ja) * 2024-04-05 2025-10-09 株式会社半導体エネルギー研究所 半導体装置、及びその作製方法
WO2026074406A1 (ja) * 2024-10-03 2026-04-09 株式会社半導体エネルギー研究所 撮像装置

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KR101645680B1 (ko) 2009-11-06 2016-08-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011102183A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11855114B2 (en) * 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI577001B (zh) 2011-10-04 2017-04-01 新力股份有限公司 固體攝像裝置、固體攝像裝置之製造方法及電子機器
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
TWI648986B (zh) 2014-04-15 2019-01-21 Sony Corporation 攝像元件、電子機器
KR102788207B1 (ko) 2015-04-13 2025-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6499006B2 (ja) * 2015-05-07 2019-04-10 株式会社半導体エネルギー研究所 撮像装置
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JP6832649B2 (ja) * 2016-08-17 2021-02-24 ブリルニクス インク 固体撮像装置、固体撮像装置の駆動方法、および電子機器
JP2018201003A (ja) * 2017-05-26 2018-12-20 株式会社半導体エネルギー研究所 半導体装置及び電子機器
TWI815841B (zh) * 2018-03-15 2023-09-21 日商尼康股份有限公司 控制裝置、控制方法以及程式
CN112005350A (zh) * 2018-04-27 2020-11-27 株式会社半导体能源研究所 半导体装置
JP2020096225A (ja) * 2018-12-10 2020-06-18 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
WO2020128673A1 (ja) * 2018-12-21 2020-06-25 株式会社半導体エネルギー研究所 半導体装置、並びに電子機器及び人工衛星
US11211461B2 (en) 2018-12-28 2021-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
CN114097083A (zh) * 2019-06-28 2022-02-25 株式会社半导体能源研究所 显示装置
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JP7504646B2 (ja) * 2020-04-07 2024-06-24 キヤノン株式会社 撮像素子およびその制御方法、撮像装置

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