KR20210120001A - 촬상 장치 및 전자 기기 - Google Patents

촬상 장치 및 전자 기기 Download PDF

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Publication number
KR20210120001A
KR20210120001A KR1020217024408A KR20217024408A KR20210120001A KR 20210120001 A KR20210120001 A KR 20210120001A KR 1020217024408 A KR1020217024408 A KR 1020217024408A KR 20217024408 A KR20217024408 A KR 20217024408A KR 20210120001 A KR20210120001 A KR 20210120001A
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KR
South Korea
Prior art keywords
transistor
insulator
circuit
layer
wiring
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Pending
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KR1020217024408A
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English (en)
Korean (ko)
Inventor
순페이 야마자키
타카유키 이케다
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20210120001A publication Critical patent/KR20210120001A/ko
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    • H04N5/379—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H01L27/146—
    • H01L29/7869—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/531—Control of the integration time by controlling rolling shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H04N5/3532—
    • H04N5/3765—
    • H04N5/378—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020217024408A 2019-01-29 2020-01-22 촬상 장치 및 전자 기기 Pending KR20210120001A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-013507 2019-01-29
JP2019013507 2019-01-29
PCT/IB2020/050457 WO2020157600A1 (ja) 2019-01-29 2020-01-22 撮像装置および電子機器

Publications (1)

Publication Number Publication Date
KR20210120001A true KR20210120001A (ko) 2021-10-06

Family

ID=71841688

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217024408A Pending KR20210120001A (ko) 2019-01-29 2020-01-22 촬상 장치 및 전자 기기

Country Status (6)

Country Link
US (2) US12035061B2 (https=)
JP (2) JP7434188B2 (https=)
KR (1) KR20210120001A (https=)
CN (1) CN113330555A (https=)
DE (1) DE112020000575T5 (https=)
WO (1) WO2020157600A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230071125A (ko) * 2020-09-22 2023-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
KR20240093546A (ko) 2021-10-27 2024-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US12272299B1 (en) * 2023-10-06 2025-04-08 Globalfoundries U.S. Inc. Compact memory-in-pixel display structure
WO2025196596A1 (ja) * 2024-03-21 2025-09-25 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
WO2025210468A1 (ja) * 2024-04-05 2025-10-09 株式会社半導体エネルギー研究所 半導体装置、及びその作製方法
WO2026074406A1 (ja) * 2024-10-03 2026-04-09 株式会社半導体エネルギー研究所 撮像装置

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2011119711A (ja) 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置

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US7218349B2 (en) 2001-08-09 2007-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20250030527A (ko) * 2009-09-04 2025-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
WO2011102183A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11855114B2 (en) * 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI577001B (zh) 2011-10-04 2017-04-01 新力股份有限公司 固體攝像裝置、固體攝像裝置之製造方法及電子機器
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
TWI648986B (zh) 2014-04-15 2019-01-21 Sony Corporation 攝像元件、電子機器
KR102788207B1 (ko) 2015-04-13 2025-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6499006B2 (ja) * 2015-05-07 2019-04-10 株式会社半導体エネルギー研究所 撮像装置
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JP2018201003A (ja) * 2017-05-26 2018-12-20 株式会社半導体エネルギー研究所 半導体装置及び電子機器
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JP2020096225A (ja) * 2018-12-10 2020-06-18 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
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Publication number Publication date
DE112020000575T5 (de) 2021-10-28
US12035061B2 (en) 2024-07-09
JPWO2020157600A1 (https=) 2020-08-06
US20220103772A1 (en) 2022-03-31
WO2020157600A1 (ja) 2020-08-06
CN113330555A (zh) 2021-08-31
US12316991B2 (en) 2025-05-27
JP7434188B2 (ja) 2024-02-20
US20240365021A1 (en) 2024-10-31
JP2024045443A (ja) 2024-04-02

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