CN113330555A - 摄像装置及电子设备 - Google Patents

摄像装置及电子设备 Download PDF

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Publication number
CN113330555A
CN113330555A CN202080009925.6A CN202080009925A CN113330555A CN 113330555 A CN113330555 A CN 113330555A CN 202080009925 A CN202080009925 A CN 202080009925A CN 113330555 A CN113330555 A CN 113330555A
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CN
China
Prior art keywords
transistor
circuit
insulator
layer
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080009925.6A
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English (en)
Chinese (zh)
Inventor
山崎舜平
池田隆之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN113330555A publication Critical patent/CN113330555A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/531—Control of the integration time by controlling rolling shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202080009925.6A 2019-01-29 2020-01-22 摄像装置及电子设备 Pending CN113330555A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-013507 2019-01-29
JP2019013507 2019-01-29
PCT/IB2020/050457 WO2020157600A1 (ja) 2019-01-29 2020-01-22 撮像装置および電子機器

Publications (1)

Publication Number Publication Date
CN113330555A true CN113330555A (zh) 2021-08-31

Family

ID=71841688

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080009925.6A Pending CN113330555A (zh) 2019-01-29 2020-01-22 摄像装置及电子设备

Country Status (6)

Country Link
US (2) US12035061B2 (https=)
JP (2) JP7434188B2 (https=)
KR (1) KR20210120001A (https=)
CN (1) CN113330555A (https=)
DE (1) DE112020000575T5 (https=)
WO (1) WO2020157600A1 (https=)

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KR20230071125A (ko) * 2020-09-22 2023-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
KR20240093546A (ko) 2021-10-27 2024-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US12272299B1 (en) * 2023-10-06 2025-04-08 Globalfoundries U.S. Inc. Compact memory-in-pixel display structure
WO2025196596A1 (ja) * 2024-03-21 2025-09-25 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
WO2025210468A1 (ja) * 2024-04-05 2025-10-09 株式会社半導体エネルギー研究所 半導体装置、及びその作製方法
WO2026074406A1 (ja) * 2024-10-03 2026-04-09 株式会社半導体エネルギー研究所 撮像装置

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KR20250030527A (ko) * 2009-09-04 2025-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
KR101645680B1 (ko) 2009-11-06 2016-08-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011102183A1 (en) 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11855114B2 (en) * 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI577001B (zh) 2011-10-04 2017-04-01 新力股份有限公司 固體攝像裝置、固體攝像裝置之製造方法及電子機器
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
TWI648986B (zh) 2014-04-15 2019-01-21 Sony Corporation 攝像元件、電子機器
KR102788207B1 (ko) 2015-04-13 2025-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6499006B2 (ja) * 2015-05-07 2019-04-10 株式会社半導体エネルギー研究所 撮像装置
US10020336B2 (en) * 2015-12-28 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device using three dimentional (3D) integration
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JP6832649B2 (ja) * 2016-08-17 2021-02-24 ブリルニクス インク 固体撮像装置、固体撮像装置の駆動方法、および電子機器
JP2018201003A (ja) * 2017-05-26 2018-12-20 株式会社半導体エネルギー研究所 半導体装置及び電子機器
TWI815841B (zh) * 2018-03-15 2023-09-21 日商尼康股份有限公司 控制裝置、控制方法以及程式
CN112005350A (zh) * 2018-04-27 2020-11-27 株式会社半导体能源研究所 半导体装置
JP2020096225A (ja) * 2018-12-10 2020-06-18 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
WO2020128673A1 (ja) * 2018-12-21 2020-06-25 株式会社半導体エネルギー研究所 半導体装置、並びに電子機器及び人工衛星
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CN114097083A (zh) * 2019-06-28 2022-02-25 株式会社半导体能源研究所 显示装置
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JP7504646B2 (ja) * 2020-04-07 2024-06-24 キヤノン株式会社 撮像素子およびその制御方法、撮像装置

Also Published As

Publication number Publication date
KR20210120001A (ko) 2021-10-06
DE112020000575T5 (de) 2021-10-28
US12035061B2 (en) 2024-07-09
JPWO2020157600A1 (https=) 2020-08-06
US20220103772A1 (en) 2022-03-31
WO2020157600A1 (ja) 2020-08-06
US12316991B2 (en) 2025-05-27
JP7434188B2 (ja) 2024-02-20
US20240365021A1 (en) 2024-10-31
JP2024045443A (ja) 2024-04-02

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