JP7434188B2 - 撮像装置および電子機器 - Google Patents

撮像装置および電子機器 Download PDF

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Publication number
JP7434188B2
JP7434188B2 JP2020568869A JP2020568869A JP7434188B2 JP 7434188 B2 JP7434188 B2 JP 7434188B2 JP 2020568869 A JP2020568869 A JP 2020568869A JP 2020568869 A JP2020568869 A JP 2020568869A JP 7434188 B2 JP7434188 B2 JP 7434188B2
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transistor
insulator
circuit
wiring
layer
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Japanese (ja)
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JPWO2020157600A1 (https=
JPWO2020157600A5 (https=
Inventor
舜平 山崎
隆之 池田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/531—Control of the integration time by controlling rolling shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2020568869A 2019-01-29 2020-01-22 撮像装置および電子機器 Active JP7434188B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024016810A JP2024045443A (ja) 2019-01-29 2024-02-07 撮像装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019013507 2019-01-29
JP2019013507 2019-01-29
PCT/IB2020/050457 WO2020157600A1 (ja) 2019-01-29 2020-01-22 撮像装置および電子機器

Related Child Applications (1)

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JP2024016810A Division JP2024045443A (ja) 2019-01-29 2024-02-07 撮像装置

Publications (3)

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JPWO2020157600A1 JPWO2020157600A1 (https=) 2020-08-06
JPWO2020157600A5 JPWO2020157600A5 (https=) 2022-12-08
JP7434188B2 true JP7434188B2 (ja) 2024-02-20

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JP2024016810A Withdrawn JP2024045443A (ja) 2019-01-29 2024-02-07 撮像装置

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US (2) US12035061B2 (https=)
JP (2) JP7434188B2 (https=)
KR (1) KR20210120001A (https=)
CN (1) CN113330555A (https=)
DE (1) DE112020000575T5 (https=)
WO (1) WO2020157600A1 (https=)

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KR20230071125A (ko) * 2020-09-22 2023-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
KR20240093546A (ko) 2021-10-27 2024-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US12272299B1 (en) * 2023-10-06 2025-04-08 Globalfoundries U.S. Inc. Compact memory-in-pixel display structure
WO2025196596A1 (ja) * 2024-03-21 2025-09-25 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
WO2025210468A1 (ja) * 2024-04-05 2025-10-09 株式会社半導体エネルギー研究所 半導体装置、及びその作製方法
WO2026074406A1 (ja) * 2024-10-03 2026-04-09 株式会社半導体エネルギー研究所 撮像装置

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WO2015159728A1 (ja) 2014-04-15 2015-10-22 ソニー株式会社 撮像素子、電子機器
JP2016213298A (ja) 2015-05-07 2016-12-15 株式会社半導体エネルギー研究所 撮像装置および電子機器
JP2017175129A (ja) 2016-03-18 2017-09-28 株式会社半導体エネルギー研究所 半導体装置、半導体ウエハ、モジュールおよび電子機器とその作製方法
WO2017209221A1 (ja) 2016-05-31 2017-12-07 ソニーセミコンダクタソリューションズ株式会社 撮像装置および撮像方法、カメラモジュール、並びに電子機器

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KR101645680B1 (ko) 2009-11-06 2016-08-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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JP2016213298A (ja) 2015-05-07 2016-12-15 株式会社半導体エネルギー研究所 撮像装置および電子機器
JP2017175129A (ja) 2016-03-18 2017-09-28 株式会社半導体エネルギー研究所 半導体装置、半導体ウエハ、モジュールおよび電子機器とその作製方法
WO2017209221A1 (ja) 2016-05-31 2017-12-07 ソニーセミコンダクタソリューションズ株式会社 撮像装置および撮像方法、カメラモジュール、並びに電子機器

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Publication number Publication date
KR20210120001A (ko) 2021-10-06
DE112020000575T5 (de) 2021-10-28
US12035061B2 (en) 2024-07-09
JPWO2020157600A1 (https=) 2020-08-06
US20220103772A1 (en) 2022-03-31
WO2020157600A1 (ja) 2020-08-06
CN113330555A (zh) 2021-08-31
US12316991B2 (en) 2025-05-27
US20240365021A1 (en) 2024-10-31
JP2024045443A (ja) 2024-04-02

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