JPWO2020157600A1 - - Google Patents
Info
- Publication number
- JPWO2020157600A1 JPWO2020157600A1 JP2020568869A JP2020568869A JPWO2020157600A1 JP WO2020157600 A1 JPWO2020157600 A1 JP WO2020157600A1 JP 2020568869 A JP2020568869 A JP 2020568869A JP 2020568869 A JP2020568869 A JP 2020568869A JP WO2020157600 A1 JPWO2020157600 A1 JP WO2020157600A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
- H04N25/531—Control of the integration time by controlling rolling shutters in CMOS SSIS
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024016810A JP2024045443A (ja) | 2019-01-29 | 2024-02-07 | 撮像装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019013507 | 2019-01-29 | ||
| JP2019013507 | 2019-01-29 | ||
| PCT/IB2020/050457 WO2020157600A1 (ja) | 2019-01-29 | 2020-01-22 | 撮像装置および電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024016810A Division JP2024045443A (ja) | 2019-01-29 | 2024-02-07 | 撮像装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020157600A1 true JPWO2020157600A1 (https=) | 2020-08-06 |
| JPWO2020157600A5 JPWO2020157600A5 (https=) | 2022-12-08 |
| JP7434188B2 JP7434188B2 (ja) | 2024-02-20 |
Family
ID=71841688
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020568869A Active JP7434188B2 (ja) | 2019-01-29 | 2020-01-22 | 撮像装置および電子機器 |
| JP2024016810A Withdrawn JP2024045443A (ja) | 2019-01-29 | 2024-02-07 | 撮像装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024016810A Withdrawn JP2024045443A (ja) | 2019-01-29 | 2024-02-07 | 撮像装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US12035061B2 (https=) |
| JP (2) | JP7434188B2 (https=) |
| KR (1) | KR20210120001A (https=) |
| CN (1) | CN113330555A (https=) |
| DE (1) | DE112020000575T5 (https=) |
| WO (1) | WO2020157600A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230071125A (ko) * | 2020-09-22 | 2023-05-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 및 전자 기기 |
| KR20240093546A (ko) | 2021-10-27 | 2024-06-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| US12272299B1 (en) * | 2023-10-06 | 2025-04-08 | Globalfoundries U.S. Inc. | Compact memory-in-pixel display structure |
| WO2025196596A1 (ja) * | 2024-03-21 | 2025-09-25 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| WO2025210468A1 (ja) * | 2024-04-05 | 2025-10-09 | 株式会社半導体エネルギー研究所 | 半導体装置、及びその作製方法 |
| WO2026074406A1 (ja) * | 2024-10-03 | 2026-04-09 | 株式会社半導体エネルギー研究所 | 撮像装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015159728A1 (ja) * | 2014-04-15 | 2015-10-22 | ソニー株式会社 | 撮像素子、電子機器 |
| JP2016213298A (ja) * | 2015-05-07 | 2016-12-15 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
| JP2017175129A (ja) * | 2016-03-18 | 2017-09-28 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体ウエハ、モジュールおよび電子機器とその作製方法 |
| WO2017209221A1 (ja) * | 2016-05-31 | 2017-12-07 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置および撮像方法、カメラモジュール、並びに電子機器 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7218349B2 (en) | 2001-08-09 | 2007-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20250030527A (ko) * | 2009-09-04 | 2025-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치를 제작하기 위한 방법 |
| KR101645680B1 (ko) | 2009-11-06 | 2016-08-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011102183A1 (en) | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US11855114B2 (en) * | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
| US9431545B2 (en) | 2011-09-23 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI577001B (zh) | 2011-10-04 | 2017-04-01 | 新力股份有限公司 | 固體攝像裝置、固體攝像裝置之製造方法及電子機器 |
| US9236408B2 (en) | 2012-04-25 | 2016-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor device including photodiode |
| KR102788207B1 (ko) | 2015-04-13 | 2025-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US10020336B2 (en) * | 2015-12-28 | 2018-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device using three dimentional (3D) integration |
| US9947700B2 (en) * | 2016-02-03 | 2018-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
| US10115741B2 (en) | 2016-02-05 | 2018-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| JP6832649B2 (ja) * | 2016-08-17 | 2021-02-24 | ブリルニクス インク | 固体撮像装置、固体撮像装置の駆動方法、および電子機器 |
| JP2018201003A (ja) * | 2017-05-26 | 2018-12-20 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
| TWI815841B (zh) * | 2018-03-15 | 2023-09-21 | 日商尼康股份有限公司 | 控制裝置、控制方法以及程式 |
| CN112005350A (zh) * | 2018-04-27 | 2020-11-27 | 株式会社半导体能源研究所 | 半导体装置 |
| JP2020096225A (ja) * | 2018-12-10 | 2020-06-18 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び電子機器 |
| WO2020128673A1 (ja) * | 2018-12-21 | 2020-06-25 | 株式会社半導体エネルギー研究所 | 半導体装置、並びに電子機器及び人工衛星 |
| US11211461B2 (en) | 2018-12-28 | 2021-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
| CN114097083A (zh) * | 2019-06-28 | 2022-02-25 | 株式会社半导体能源研究所 | 显示装置 |
| US20230139176A1 (en) * | 2020-03-31 | 2023-05-04 | Sony Semiconductor Solutions Corporation | Imaging device and electronic apparatus |
| JP7504646B2 (ja) * | 2020-04-07 | 2024-06-24 | キヤノン株式会社 | 撮像素子およびその制御方法、撮像装置 |
-
2020
- 2020-01-22 CN CN202080009925.6A patent/CN113330555A/zh active Pending
- 2020-01-22 KR KR1020217024408A patent/KR20210120001A/ko active Pending
- 2020-01-22 US US17/422,580 patent/US12035061B2/en active Active
- 2020-01-22 DE DE112020000575.5T patent/DE112020000575T5/de active Pending
- 2020-01-22 JP JP2020568869A patent/JP7434188B2/ja active Active
- 2020-01-22 WO PCT/IB2020/050457 patent/WO2020157600A1/ja not_active Ceased
-
2024
- 2024-02-07 JP JP2024016810A patent/JP2024045443A/ja not_active Withdrawn
- 2024-07-08 US US18/766,024 patent/US12316991B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015159728A1 (ja) * | 2014-04-15 | 2015-10-22 | ソニー株式会社 | 撮像素子、電子機器 |
| JP2016213298A (ja) * | 2015-05-07 | 2016-12-15 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
| JP2017175129A (ja) * | 2016-03-18 | 2017-09-28 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体ウエハ、モジュールおよび電子機器とその作製方法 |
| WO2017209221A1 (ja) * | 2016-05-31 | 2017-12-07 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置および撮像方法、カメラモジュール、並びに電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20210120001A (ko) | 2021-10-06 |
| DE112020000575T5 (de) | 2021-10-28 |
| US12035061B2 (en) | 2024-07-09 |
| US20220103772A1 (en) | 2022-03-31 |
| WO2020157600A1 (ja) | 2020-08-06 |
| CN113330555A (zh) | 2021-08-31 |
| US12316991B2 (en) | 2025-05-27 |
| JP7434188B2 (ja) | 2024-02-20 |
| US20240365021A1 (en) | 2024-10-31 |
| JP2024045443A (ja) | 2024-04-02 |
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