JPWO2022238798A5 - - Google Patents

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Publication number
JPWO2022238798A5
JPWO2022238798A5 JP2023520563A JP2023520563A JPWO2022238798A5 JP WO2022238798 A5 JPWO2022238798 A5 JP WO2022238798A5 JP 2023520563 A JP2023520563 A JP 2023520563A JP 2023520563 A JP2023520563 A JP 2023520563A JP WO2022238798 A5 JPWO2022238798 A5 JP WO2022238798A5
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JP
Japan
Prior art keywords
memory cell
substrate
layer
transistor
peripheral circuit
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JP2023520563A
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English (en)
Japanese (ja)
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JPWO2022238798A1 (https=
JP7811940B2 (ja
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Priority claimed from PCT/IB2022/053840 external-priority patent/WO2022238798A1/ja
Publication of JPWO2022238798A1 publication Critical patent/JPWO2022238798A1/ja
Publication of JPWO2022238798A5 publication Critical patent/JPWO2022238798A5/ja
Application granted granted Critical
Publication of JP7811940B2 publication Critical patent/JP7811940B2/ja
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JP2023520563A 2021-05-10 2022-04-26 半導体装置 Active JP7811940B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2021079594 2021-05-10
JP2021079595 2021-05-10
JP2021079595 2021-05-10
JP2021079594 2021-05-10
PCT/IB2022/053840 WO2022238798A1 (ja) 2021-05-10 2022-04-26 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022238798A1 JPWO2022238798A1 (https=) 2022-11-17
JPWO2022238798A5 true JPWO2022238798A5 (https=) 2025-03-26
JP7811940B2 JP7811940B2 (ja) 2026-02-06

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ID=84029477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023520563A Active JP7811940B2 (ja) 2021-05-10 2022-04-26 半導体装置

Country Status (4)

Country Link
US (1) US20240147708A1 (https=)
JP (1) JP7811940B2 (https=)
KR (1) KR20240006569A (https=)
WO (1) WO2022238798A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12608060B2 (en) * 2023-01-06 2026-04-21 Micron Technology, Inc. Power management and delivery for high bandwidth memory
KR20250163307A (ko) 2023-03-21 2025-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 기억 장치, 전자 기기, 및 처리 장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2372756A1 (en) * 2007-03-13 2011-10-05 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
KR101752518B1 (ko) * 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011129233A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
US8848464B2 (en) * 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
JP6014362B2 (ja) * 2011-05-19 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2013138177A (ja) 2011-11-28 2013-07-11 Elpida Memory Inc 半導体装置の製造方法
JP2013131533A (ja) 2011-12-20 2013-07-04 Elpida Memory Inc 半導体装置
KR102436895B1 (ko) * 2013-10-22 2022-08-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
US9953695B2 (en) * 2015-12-29 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and semiconductor wafer
KR102395463B1 (ko) * 2017-09-27 2022-05-09 삼성전자주식회사 적층형 메모리 장치, 이를 포함하는 시스템 및 그 동작 방법
US12317600B2 (en) * 2018-01-25 2025-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and semiconductor device

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