JP2006210436A - 強誘電体キャパシタの製造方法 - Google Patents
強誘電体キャパシタの製造方法 Download PDFInfo
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- JP2006210436A JP2006210436A JP2005017450A JP2005017450A JP2006210436A JP 2006210436 A JP2006210436 A JP 2006210436A JP 2005017450 A JP2005017450 A JP 2005017450A JP 2005017450 A JP2005017450 A JP 2005017450A JP 2006210436 A JP2006210436 A JP 2006210436A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 19
- 238000001312 dry etching Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 24
- 238000004380 ashing Methods 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- -1 metal oxide compound Chemical class 0.000 claims 2
- 238000005530 etching Methods 0.000 abstract description 23
- 238000010030 laminating Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 20
- 239000000460 chlorine Substances 0.000 description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 13
- 230000010287 polarization Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000005406 washing Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 229910010037 TiAlN Inorganic materials 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N iridium(IV) oxide Inorganic materials O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32138—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】下部電極、強誘電体膜及び上部電極が積層された強誘電体キャパシタの製造方法において、一括ドライエッチングし、上部電極、強誘電体膜、下部電極を加工形成し、強誘電体キャパシタの側壁部に付着した反応生成物の除去処理を行い、そして、濃硫酸により洗浄し、強誘電体膜側壁部の不動態化処理を行う。
【選択図】 図2
Description
2 素子分離絶縁膜
3 ソース・ドレイン拡散層
4 MOSトランジスタ
5、15 絶縁膜
6,16 開口部
7,17 バリア膜
8,18 プラグ電極
9 下部電極
10 強誘電体膜
11 上部電極
12 第1マスク膜
13 第2マスク膜
14 レジスト
Claims (16)
- 下部電極、強誘電体膜及び上部電極が積層された強誘電体キャパシタの製造方法において、マスク膜を用いて一括ドライエッチングし上部電極、強誘電体膜、下部電極を形成し、前記強誘電体キャパシタの側壁部に付着した反応生成物の除去を行い、前記強誘電体膜側壁部の不動態化処理をおこなうことを特徴とする強誘電体キャパシタの製造方法。
- 前記強誘電体膜は酸化金属化合物を含むことを特徴とする請求項1記載の強誘電体キャパシタの製造方法。
- 前記強誘電体膜はSBT膜であることを特徴とする請求項2記載の強誘電体キャパシタの製造方法。
- 前記不動態化は濃硫酸によっておこなわれることを特徴とする請求項2記載の強誘電体キャパシタの製造方法。
- 前記濃硫酸の濃度は89%であることを特徴とする請求項4記載の強誘電体キャパシタの製造方法。
- 前記反応生成物除去の処理はアッシングであることを特徴とする請求項4記載の強誘電体キャパシタの製造方法。
- 前記マスク膜はハードマスクであることを特徴とする請求項4記載の強誘電体キャパシタの製造方法。
- 前記マスク膜は積層膜であることを特徴とする請求項7記載の強誘電体キャパシタの製造方法。
- 下部電極、強誘電体膜及び上部電極により構成される強誘電体キャパシタの製造方法において、上部電極、強誘電体膜、下部電極をドライエッチング法により形成し、前記強誘電体キャパシタの側壁部に付着した反応生成物除去の処理を行い、前記強誘電体膜側壁部の不動態化処理をおこなうことを特徴とする強誘電体キャパシタの製造方法。
- 前記強誘電体膜は酸化金属化合物を含むことを特徴とする請求項9記載の強誘電体キャパシタの製造方法。
- 前記強誘電体膜はSBT膜であることを特徴とする請求項10記載の強誘電体キャパシタの製造方法。
- 前記不動態化は濃硫酸によっておこなわれることを特徴とする請求項10記載の強誘電体キャパシタの製造方法。
- 前記濃硫酸の濃度は89%であることを特徴とする請求項12記載の強誘電体キャパシタの製造方法。
- 前記反応生成物除去の処理はアッシングであることを特徴とする請求項12記載の強誘電体キャパシタの製造方法。
- 前記マスク膜はハードマスクであることを特徴とする請求項12記載の強誘電体キャパシタの製造方法。
- 前記マスク膜は積層膜であることを特徴とする請求項15記載の強誘電体キャパシタの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005017450A JP4861627B2 (ja) | 2005-01-25 | 2005-01-25 | 強誘電体キャパシタの製造方法 |
US11/335,582 US20060166379A1 (en) | 2005-01-25 | 2006-01-20 | Method for manufacturing ferroelectric capacitor |
Applications Claiming Priority (1)
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JP2005017450A JP4861627B2 (ja) | 2005-01-25 | 2005-01-25 | 強誘電体キャパシタの製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2006210436A true JP2006210436A (ja) | 2006-08-10 |
JP4861627B2 JP4861627B2 (ja) | 2012-01-25 |
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JP2005017450A Expired - Fee Related JP4861627B2 (ja) | 2005-01-25 | 2005-01-25 | 強誘電体キャパシタの製造方法 |
Country Status (2)
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US (1) | US20060166379A1 (ja) |
JP (1) | JP4861627B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008159952A (ja) * | 2006-12-25 | 2008-07-10 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2014056887A (ja) * | 2012-09-11 | 2014-03-27 | Sumitomo Electric Device Innovations Inc | キャパシタの製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07142452A (ja) * | 1993-11-17 | 1995-06-02 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2001077328A (ja) * | 1999-09-03 | 2001-03-23 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2002094015A (ja) * | 2000-09-11 | 2002-03-29 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JP2003258201A (ja) * | 2002-02-28 | 2003-09-12 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2004107693A (ja) * | 2002-09-13 | 2004-04-08 | Murata Mfg Co Ltd | セラミック電子部品の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100229608B1 (ko) * | 1995-10-06 | 1999-11-15 | 모리시타 요이찌 | 유전체소자의 제조방법 |
JP3177973B2 (ja) * | 1999-01-28 | 2001-06-18 | 日本電気株式会社 | 半導体装置の製造方法 |
US6544893B2 (en) * | 1999-03-30 | 2003-04-08 | Hoya Corporation | Method of manufacturing a glass substrate for an information recording medium, and method of manufacturing an information recording medium |
US6379577B2 (en) * | 1999-06-10 | 2002-04-30 | International Business Machines Corporation | Hydrogen peroxide and acid etchant for a wet etch process |
US20040166678A1 (en) * | 2003-02-24 | 2004-08-26 | Hall Lindsey H. | Wet clean method for PZT capacitors |
US7220600B2 (en) * | 2004-12-17 | 2007-05-22 | Texas Instruments Incorporated | Ferroelectric capacitor stack etch cleaning methods |
-
2005
- 2005-01-25 JP JP2005017450A patent/JP4861627B2/ja not_active Expired - Fee Related
-
2006
- 2006-01-20 US US11/335,582 patent/US20060166379A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07142452A (ja) * | 1993-11-17 | 1995-06-02 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2001077328A (ja) * | 1999-09-03 | 2001-03-23 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2002094015A (ja) * | 2000-09-11 | 2002-03-29 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JP2003258201A (ja) * | 2002-02-28 | 2003-09-12 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2004107693A (ja) * | 2002-09-13 | 2004-04-08 | Murata Mfg Co Ltd | セラミック電子部品の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008159952A (ja) * | 2006-12-25 | 2008-07-10 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2014056887A (ja) * | 2012-09-11 | 2014-03-27 | Sumitomo Electric Device Innovations Inc | キャパシタの製造方法 |
Also Published As
Publication number | Publication date |
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JP4861627B2 (ja) | 2012-01-25 |
US20060166379A1 (en) | 2006-07-27 |
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